1. Detection of In segregation in InGaN by using Eu as a probe
- Author
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Brandon Mitchell, Junichi Takatsu, Takanori Kojima, Tom Gregorkiewicz, Yasufumi Fujiwara, Atsushi Koizumi, Shuhei Yamanaka, and Masaaki Matsuda
- Subjects
010302 applied physics ,Materials science ,Photoluminescence ,business.industry ,Pl spectra ,Doping ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Ion ,Inorganic Chemistry ,0103 physical sciences ,Materials Chemistry ,Optoelectronics ,Emission spectrum ,0210 nano-technology ,business ,Luminescence ,Spectroscopy - Abstract
Eu ions were doped into InGaN by organometallic vapor phase epitaxy. The influence of In composition on the optical properties of Eu-doped InGaN (InGaN:Eu) was investigated using photoluminescence (PL), and combined excitation-emission spectroscopy (CEES). The PL spectra of InGaN:Eu showed a new series of emission lines, which became dominant with increasing In content. CEES measurements confirmed that these emission lines originated from a new Eu luminescent center, with In as a second nearest neighbor. Thus, it is possible to distinguish the typical Eu-N related luminescent sites from the new Eu-N-In related luminescent site. Based upon our findings, we propose that Eu 3+ ions doped in InGaN could be used as a microscopic probe for the detection of In segregation.
- Published
- 2017
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