39 results on '"Honda, Yoshio"'
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2. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
3. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
4. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
5. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
6. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
7. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
8. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
9. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
10. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
11. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
12. Morphological study of InGaN on GaN substrate by supersaturation
13. How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
14. High-temperature thermal annealing of nonpolar (1 0 [formula omitted] 0) AlN layers sputtered on (1 0 [formula omitted] 0) sapphire
15. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
16. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
17. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
18. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
19. Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
20. Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy
21. Growth and properties of semi-polar GaN on a patterned silicon substrate
22. Mg doping in (1 1¯ 0 1)GaN grown on a 7° off-axis (0 0 1)Si substrate by selective MOVPE
23. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (0 0 1) Si substrate by metalorganic vapor phase epitaxy
24. Corrigendum to “Morphological study of InGaN on GaN substrate by supersaturation” [J. Cryst. Growth 508 (2019) 58–65]
25. Growth of ( [formula omitted]) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE
26. Growth of a GaN crystal free from cracks on a (1 1 1)Si substrate by selective MOVPE
27. Fabrication of GaN/AlGaN heterostructures on a (1 1 1)Si substrate by selective MOVPE
28. High-temperature thermal annealing of nonpolar (1 01¯0) AlN layers sputtered on (1 01¯0) sapphire
29. Effect of V/III ratio on the surface morphology and electrical properties of m–plane (101¯0) GaN homoepitaxial layers
30. Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer
31. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE
32. Novel activation process for Mg-implanted GaN
33. Maskless selective growth of semi-polar (112¯2) GaN on Si (311) substrate by metal organic vapor phase epitaxy
34. Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE
35. Incorporation of carbon on a facet of GaN by MOVPE
36. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy
37. Growth of (101) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE
38. Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE
39. Improved crystal quality of semipolar (10[formula omitted]3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer.
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