1,776 results on '"DOT"'
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2. Kinetic Monte Carlo simulations of quantum dot self-assembly
3. Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures
4. Intermittent growth for InAs quantum dot on GaAs(001)
5. Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
6. Quantum dot molecule formation in Si-Ge heteroepitaxy on pit–patterned Si(001) substrate: A theoretical study
7. Room-temperature photoluminescence of AP-MOVPE grown single GaSb/GaAs quantum dot layer
8. Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range
9. Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing
10. O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate
11. Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1 0 0) substrate by molecular beam epitaxy
12. Trace of increasing dot size in porous silicon systems of same thicknesses
13. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 [formula omitted]m high-speed lasers
14. Annealing effect of the InAs dot-in-well structure grown by MBE
15. GaAs quantum dot molecules filled into droplet etched nanoholes
16. Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy
17. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy
18. Cerium ion doping into self-assembled Ge using three-dimensional dot structure
19. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
20. An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures
21. Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices
22. Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method
23. Wavelength tuning of InAs quantum dot laser by micromirror device
24. GaSb/GaAs quantum-ring-with-dot structures grown by droplet epitaxy
25. Integration of multiple site-controlled pyramidal quantum dot systems with photonic-crystal membrane cavities
26. Inclusion of CdS quantum DoT into beta-cyclodextrin crystal by simple rapid crystallization
27. Quantitative monitoring of InAs quantum dot growth using X-ray diffraction
28. Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers
29. InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy
30. As flux dependence on RHEED transients during InAs quantum dot growth
31. Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 μm by using quantum dot bi-layer for broadband light source
32. Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains
33. Growth of II–VI ZnSe/CdSe nanowires for quantum dot luminescence
34. InGaAs quantum-dot-in-ring structure by droplet epitaxy
35. Broadband InGaAs quantum dot-in-a-well solar cells of p-type wells
36. Misfit management for reduced dislocation formation in epitaxial quantum-dot-based devices
37. Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
38. Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy
39. Controlling the formation of quantum dot pairs using nanohole templates
40. Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth
41. InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation
42. Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy
43. InGaAs self-assembly quantum dot for high-speed 1300 nm electroabsorption modulator
44. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495 nm)
45. Wide-band emissions from highly stacked quantum dot structure grown using the strain-compensation technique
46. Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source
47. Quantum dot lasers grown by gas source molecular-beam epitaxy
48. Bandgap engineering of 1.3 μm quantum dot structures for terahertz (THz) emission
49. InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxy
50. Bimodal optical characteristics of lateral InGaAs quantum dot molecules
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