1. In-situ control of molecular beam epitaxial growth by spectral reflectivity analysis
- Author
-
Antonio Crespo-Poveda, Alexander S. Kuznetsov, Klaus Biermann, Abbes Tahraoui, Lutz Schrottke, Xiang Lü, Paulo V. Santos, Holger T. Grahn, Paul L. J. Helgers, and Benjamin Röben
- Subjects
010302 applied physics ,In situ ,Reproducibility ,Materials science ,business.industry ,Heterojunction ,02 engineering and technology ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,Epitaxy ,01 natural sciences ,Measure (mathematics) ,law.invention ,Inorganic Chemistry ,Molecular beam epitaxial growth ,law ,0103 physical sciences ,Materials Chemistry ,Optoelectronics ,0210 nano-technology ,business - Abstract
The epitaxial growth of complex heterostructures requires in-situ techniques for detection and control of the growth parameters. In-situ continuous spectral reflectivity measurements are used during molecular beam epitaxial growth to measure the substrate temperature and achieve close growth control on complex structures such as quantum-cascade lasers and microcavities. The corresponding utilized modes of operations are illustrated in detail and are found to enhance the reproducibility and precision of complex growth runs.
- Published
- 2021
- Full Text
- View/download PDF