177 results on '"Amano, Hiroshi"'
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2. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
3. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
4. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
5. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
6. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers
7. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
8. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate
9. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
10. Nonpolar m-plane [formula omitted]N layers grown on m-plane sapphire by MOVPE
11. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
12. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
13. Morphological study of InGaN on GaN substrate by supersaturation
14. How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
15. MOVPE growth and high-temperature annealing of (10[formula omitted]0) AlN layers on (10[formula omitted]0) sapphire
16. High-temperature thermal annealing of nonpolar (1 0 [formula omitted] 0) AlN layers sputtered on (1 0 [formula omitted] 0) sapphire
17. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
18. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
19. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
20. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
21. MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate
22. MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (1 1 1)Si substrates
23. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
24. Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
25. Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
26. Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
27. InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy
28. Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC
29. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
30. Novel UV devices on high-quality AlGaN using grooved underlying layer
31. Relaxation and recovery processes of Al xGa 1−xN grown on AlN underlying layer
32. Control of stress and crystalline quality in GaInN films used for green emitters
33. Control of p-type conduction in a-plane Ga 1−xIn xN (0< x
34. Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates
35. Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
36. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
37. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
38. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
39. Epitaxial lateral overgrowth of Al xGa 1−xN ( x>0.2) on sapphire and its application to UV-B-light-emitting devices
40. Corrigendum to “Morphological study of InGaN on GaN substrate by supersaturation” [J. Cryst. Growth 508 (2019) 58–65]
41. MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire
42. Reduction of threading dislocation density in Al XGa 1− XN grown on periodically grooved substrates
43. Structural analysis of Si-doped AlGaN/GaN multi-quantum wells
44. MOVPE growth and characterization of Al 1− xIn xN/GaN multiple layers
45. Relaxation of misfit-induced stress in nitride-based heterostructures
46. Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN
47. Low-dislocation-density GaN and Al xGa 1− xN ( x⩽0.13) grown on grooved substrates
48. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
49. Structural characterization of Al 1− xIn xN lattice-matched to GaN
50. High-temperature thermal annealing of nonpolar (1 01¯0) AlN layers sputtered on (1 01¯0) sapphire
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