1. Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy
- Author
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Lai, Fang-I, Kuo, Shou-Yi, Lin, Woei-Tyng, Chen, Wei-Chun, Hsiao, Chien-Nan, Liu, Yu-Kai, and Shen, Ji-Lin
- Subjects
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PHOTOLUMINESCENCE , *INDIUM compounds , *NITRIDES , *THIN films , *OXIDES , *ORGANOMETALLIC compounds , *MOLECULAR beam epitaxy , *SEMICONDUCTORS , *X-ray diffraction , *SCANNING electron microscopy , *HALL effect , *ELECTRON-phonon interactions - Abstract
Abstract: We have investigated the effects of III/V ratio on the properties of InN films grown on sapphire substrates with oxide buffer by metalorganic molecular-beam epitaxy. The structural, optical and electrical properties of the InN films were investigated by X-ray diffraction, scanning electron microscopy, Hall-effect and temperature-dependent photoluminescence (PL) measurements. Near-infrared emission peaks between 0.74 and 0.78eV were observed. On increasing the III/V flux ratio, the PL emission peak red-shifted that is related to the reduction in carrier concentration. In addition, the PL spectra show an abnormal behavior with increase in temperature. The temperature-dependence PL spectra exhibit blue-shift as the temperature increased up to 150K and then red-shift, reflecting a competition between the blue-shift induced by thermal screening and the red-shift induced by electron–phonon interaction. [Copyright &y& Elsevier]
- Published
- 2011
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