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Chemically fabricated ANP WO 3 /Bi 2 S 3 QDs heterostructure was synthesized toward efficient photoanode for photoelectrochemical water splitting. The influence of SILAR cycles for Bi 2 S 3 QDs over ANP WO 3 was investigated. The highest photoconversion efficiency of 4.1% at 0.66 V vs RHE is achieved by the deposition of 10 cycles of Bi 2 S 3 QDs over the ANP WO 3. [Display omitted] Although anodic nanoporous (ANP) WO 3 has gained a lot of attention for photoelectrochemical water splitting (PEC-WS), there is still a lack of efficient WO 3 -based photoanodes with sufficient light absorption and good e−/h+ separation and transfer. The decoration of ANP WO 3 with narrow bandgap semiconductor quantum dots (QDs) can enhance charge carrier transfer while reducing their recombination, resulting in a high PEC efficiency. In this study, ANP WO 3 was synthesized via an anodic oxidation process and then modified with Bi 2 S 3 QDs via successive ionic layer adsorption and reaction (SILAR) process and examined as a photoanode for PEC-WS under ultraviolet–visible illumination. The ANP WO 3 photoanode modified with ten cycles of Bi 2 S 3 QDs demonstrated the highest current density of 16.28 mA cm−2 at 0.95 V vs RHE, which is approximately 19 times that of pure ANP WO 3 (0.85 mA cm−2). Furthermore, ANP WO 3 /Bi 2 S 3 QDs (10) photoanode demonstrated the highest photoconversion efficiency of 4.1 % at 0.66 V vs RHE, whereas pure ANP WO 3 demonstrated 0.3 % at 0.85 V vs RHE. This can be attributed to the proper number of Bi 2 S 3 QDs significantly enhancing the visible light absorption, construction of type-II band alignment with WO 3, and improved charge separation and migration. The modification of ANP WO 3 with nontoxic Bi 2 S 3 QDs as a prospective metal chalcogenide for enhancing visible light absorption and PEC-WS performance has not yet been investigated. Consequently, this study paves the path for a facile technique of designing effective photoelectrodes for PEC-WS. [ABSTRACT FROM AUTHOR]