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Amorphous titanium dioxide (a-TiO2) is widely used as a coating material in applications such as electrochemistry and self-cleaning surfaces where its interface with water has a central role. However, little is known about the structures of the a-TiO2 surface and aqueous interface, particularly at the microscopic level. In this work, we construct a model of the a-TiO2 surface via a cut-melt-and-quench procedure based on molecular dynamics simulations with deep neural network potentials (DPs) trained on density functional theory data. After interfacing the a-TiO2 surface with water, we investigate the structure and dynamics of the resulting system using a combination of DP-based molecular dynamics (DPMD) and ab initio molecular dynamics (AIMD) simulations. Both AIMD and DPMD simulations reveal that the distribution of water on the a-TiO2 surface lacks distinct layers normally found at the aqueous interface of crystalline TiO2, leading to an ∼10 times faster diffusion of water at the interface. Bridging hydroxyls (Ti2–ObH) resulting from water dissociation decay several times more slowly than terminal hydroxyls (Ti–OwH) due to fast Ti–OwH2 → Ti–OwH proton exchange events. These results provide a basis for a detailed understanding of the properties of a-TiO2 in electrochemical environments. Moreover, the procedure of generating the a-TiO2-interface employed here is generally applicable to studying the aqueous interfaces of amorphous metal oxides. [ABSTRACT FROM AUTHOR]

The contact of heterogeneous materials with different atomic structures and concentrations becomes omnipresent in modern materials. The differences across the interface introduce various gradients that could alter thermodynamic and kinetic behaviors of the materials. Here, we report a spontaneous melting of the interface formed by a crystalline metal and an amorphous solid at the temperature below their respective equilibrium melting temperatures. The transformation can even become continuous with disappearance of all known features of the first-order melting transition. We show that the change in the nature of melting in the interface region is caused by random disordering induced by interdiffusing atomic elements or impurities in the crystalline phase and the presence of a strong concentration gradient constrained by the sample geometry. [ABSTRACT FROM AUTHOR]