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The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects. [ABSTRACT FROM AUTHOR]

Gallium nitride (GaN)- based lasers are extensively employed in display, lighting, and communication applications due to their visible laser emission. Despite notable advancements in their performance and reliability, sustained device functionality over extended periods remains a challenge. Among the diverse mechanisms contributing to degradation, the deterioration of quantum wells poses a persistent obstacle. In this study, we investigated the atomic-level degradation of quantum wells within GaN-based laser diodes utilizing atom probe microscopy. Our analysis revealed a substantial increase in indium fluctuation, accompanied by the formation of indium protrusions at the quantum well interfaces, which provides a credible explanation for the observed increase in FWHM (full width at half maximum) of the spontaneous spectra of lasers following prolonged operation. Additionally, magnesium analysis yielded no evidence of diffusion into the quantum well region. Combined with prior studies, we attribute the degradation of quantum wells primarily to the formation of indium-related non-radiative recombination centers. [ABSTRACT FROM AUTHOR]

The static electric dipole–dipole coupling between donor–acceptor pairs (DAPs) in wide-bandgap semiconductors has recently emerged as a means of realizing a quantum science platform through optically controllable, long-range interactions between defects in the solid state. In this work, we generalize DAPs to consider arbitrary dopant populations and demonstrate that the charge of the NV center in diamond is well suited for quantum science. Explicitly, we leverage experimental results [see Z. Yuan et al., PRR 2, 033263 (2020)] to show that shallow NV centers can be efficiently initialized to a given relative population of the negative and neutral charge states and that modulating the surface termination would allow for control of the timescale over which the initialization and subsequent computations would occur. Furthermore, we argue that the observation of electroluminescence from the neutral charge state of the NV center [see N. Mizuochi et al., Nat. Photon. 6, 299 (2012)], but not from the negative charge state, implies the ability to interface with the NV center's charge in a manner analogous to the spin interface enabled by the spin-state dependent fluorescence of the NV center. [ABSTRACT FROM AUTHOR]

In this paper, mole fraction dependent strain in a III-nitride alloy and its effects on built-in polarization and quantized states in multi-quantum-wells (MQWs) have been investigated. The internal electric field arising out of spontaneous and piezoelectric polarizations in the presence of strain has been calculated. Then, the energy eigenvalues and wavefunctions of carriers in the modified potential well configurations have been computed by solving a time-independent Schrödinger equation using a finite difference method. Next, the overlap integrals between the wavefunctions of bound states in conduction and valence bands, an important consideration for optical transitions, have been computed and plotted. The results are shown taking three nitride-based MQW structures InGaN/GaN, GaN/AlGaN, and InGaN/InAlN as examples. The study helps choose suitable mole fractions for the improved and desired performance of the nitride MQW based devices. [ABSTRACT FROM AUTHOR]

Asymmetric quantum wells (AQWs) utilizing interband transitions enhance second-order susceptibility over a wide wavelength range compared to natural crystals. The nonlinear susceptibility is further enhanced in AQWs with type-II band alignment as compared to type-I band alignment, a result of the larger interband charge shift. This enhancement is demonstrated in this work by analyzing three type-I and type-II AQW designs based on the lattice-matched InP/AlGaInAs materials systems using the envelope wavefunction approximation. The calculated interband second-order susceptibility tensor elements in type-II structures range between 20 and 1.60 × 103 pm/V for nearly resonant optical rectification and difference frequency generation applications at near-infrared and terahertz wavelengths, an improvement of nearly 1 order of magnitude over the type-I structures and 1–2 orders of magnitude over natural crystals such as LiNbO3, KTiOPO4 (KTP), or GaAs. A factor of 2–3 further enhancement of the tensor elements is achieved by optimizing the well widths and band offsets of the type-II asymmetric quantum wells. The type-II structure can be implemented in other material systems spanning the longwave infrared to visible wavelengths, enhancing nonlinear susceptibility for various applications, including photonic integrated circuits. [ABSTRACT FROM AUTHOR]

In this study, we investigate the tradespace between the improvement of mid-infrared light-emitting diode efficiency through microcavity enhancement vs reduction of Auger recombination for different W-superlattice thicknesses. Several sample designs are modeled and then grown and fabricated to test the tradespace at different W-superlattice thicknesses down to the quantum well limit. In a half-cavity, with a single reflector from the top metal contact, intermediate thickness W-superlattices gave the highest efficiencies, outperforming those in the W-quantum well limit across the entire measured current range. Experimentally, we report wallplug efficiencies of 0.4% for a room temperature 3.2 μm device. W-superlattices of intermediate thickness were also found to be optimal for a full-cavity device with a bottom distributed Bragg reflector added. The resonant full cavity did strongly improve the peak spectral radiance, with a measured increase of four to five times for a 3.6 μm device, and a value that is >250 times larger than previously reported. [ABSTRACT FROM AUTHOR]

Wurtzite ScxAl1−xN/GaN (x = 0.13–0.18) multi-quantum wells grown by molecular beam epitaxy on c-plane GaN are found to exhibit remarkably strong and narrow near-infrared intersubband absorption in the technologically important 1.8–2.4 μm range. Band structure simulations reveal that, for GaN wells wider than 3 nm, the quantized energies are set by the steep triangular profile of the conduction band caused by intrinsic polarization fields. As a result, the intersubband transition energies provide unique and direct access to essential ScAlN polarization parameters. Measured infrared absorption indicates that the spontaneous polarization difference of the presumed lattice-matched Sc0.18Al0.82N/GaN heterostructure is smaller than the theoretically calculated value. The intersubband transition energies are relatively insensitive to the barrier alloy composition indicating negligible variation of the net polarization field in the probed 0.13–0.18 Sc composition range. [ABSTRACT FROM AUTHOR]

A wire-on-well (WoW) structure was fabricated using InGaAs/GaAs/GaAsP superlattice device growth technology. This structure modifies the local concentration of carriers in the quantum well and lengthens the carrier lifetime to increase carrier transport efficiency. However, the reason for this remains unclear. Therefore, we investigated the detailed carrier transition properties using photoluminescence (PL) and photoreflectance measurements. Regarding the PL spectra at 4 K, two characteristic peaks at 1.39 and 1.34 eV were observed. Both transitions are attributed to the recombination between the first quantum level of the electron (e1) and that of the heavy hole (hh1). We also discussed the carrier distribution in the WoW structure and found that the maximum carrier existing probabilities for e1 and hh1 are located at different positions. The less overlapping of the wavefunctions causes low transition probability and results in the observed long carrier lifetime. An additional prominent result in the WoW structure is the blue shift attributed to the 1.34 eV PL peak induced by increasing laser excitation power. We found that the blue shift occurred by the screening of the electric field caused by the compressive strain, as in the case of the quantum-confined Stark effect. [ABSTRACT FROM AUTHOR]

Nonvolatile memory using intersubband transitions and quantum-well electron accumulation in GaN/AlN resonant tunneling diodes (RTDs) is a promising candidate for high-speed nonvolatile memory operating on a picosecond timescale. This memory has been fabricated on sapphire(0001) substrates to date because of the high affinity between the nitride materials and the substrate. However, the fabrication of this memory on Si(111) substrates is attractive to realize hybrid integration with Si devices and nonvolatile memory and three-dimensional integration such as chip-on-wafer and wafer-on-wafer. In this study, GaN/AlN RTDs are fabricated on a Si(111) substrate using metal-organic vapor phase epitaxy. The large strain caused by the differences in the thermal expansion coefficients and lattice constants between the Si(111) substrate and nitride materials are suppressed by a growth technique based on the insertion of low-temperature-grown AlGaN and thin AlN layers. The GaN/AlN RTDs fabricated on Si(111) substrates show clear GaN/AlN heterointerfaces and a high ON/OFF ratio of >220, which are equivalent to those for devices fabricated on sapphire(0001) substrates. However, the nonvolatile memory characteristics fluctuate by repeated write/erase memory operations. Evaluation of the ON/OFF switching time and endurance characteristics indicates that the instability of the nonvolatile memory characteristics is caused by electron leakage through deep levels in the quantum-well structure. Possible methods for suppressing this are discussed with an aim of realizing high-speed and high-endurance nonvolatile memory. [ABSTRACT FROM AUTHOR]

A band design of a quantum cascade laser with a generation frequency higher than 6 THz and an active region based on four GaAs/Al0.14Ga0.86As quantum wells is proposed. Calculations were carried out based on the solution of the Schrödinger equation taking into account the dephasing of quantum states, as well as a closed system of balance equations. The temperature dependences of the gain at frequencies of 6.3–6.6 THz were calculated for the proposed quantum cascade laser with a double metal waveguide. Features of the proposed laser structure include two injection quantum wells and the suppression of non-radiative transitions between laser levels. According to calculations, this provides the maximum operating temperature of up to 81 K at 6.4 THz. The results of this study open up the way for quantum cascade lasers based on GaAs/AlGaAs to operate at frequencies above 6 THz. [ABSTRACT FROM AUTHOR]

The authors investigate the influence of local polarization on the thermoelectric properties of monolayer MoS2 using a tight-binding approach. It is found that strain-induced polarization in armchair monolayer MoS2 can be easily embedded to strongly enhance the thermoelectric efficiency ZT for quantum wells. The structure we proposed can achieve a figure of merit ZT of 0.8 at room temperature in an armchair MoS2 nanoribbon, and ZT achieves 1 at 500 K. The results facilitate insight and understanding of strain modulated thermoelectric properties of monolayer MoS2 nanodevices, provide theoretical guidance for experiments, and indicate their great potential in thermoelectric devices. [ABSTRACT FROM AUTHOR]

The authors investigate the influence of local polarization on the thermoelectric properties of monolayer MoS2 using a tight-binding approach. It is found that strain-induced polarization in armchair monolayer MoS2 can be easily embedded to strongly enhance the thermoelectric efficiency ZT for quantum wells. The structure we proposed can achieve a figure of merit ZT of 0.8 at room temperature in an armchair MoS2 nanoribbon, and ZT achieves 1 at 500 K. The results facilitate insight and understanding of strain modulated thermoelectric properties of monolayer MoS2 nanodevices, provide theoretical guidance for experiments, and indicate their great potential in thermoelectric devices. [ABSTRACT FROM AUTHOR]

The coupling of an electron gas confined by a harmonic potential and submitted to a strong magnetic field tilted in relation to the confining direction creates an excitation called here magneto-polariton. This work describes the origin of this excitation and calculates the energy eigenvalues for different tilted angles. It presents the reasons leading to the crossings and repulsions of the energy bands, the degeneracy of the states, the way the Fermi levels change with the magnetic field, the influence of an external electric field, and how the Hall resistance plateaus change with the change in the tilted angle. [ABSTRACT FROM AUTHOR]

This review concentrates on the microstructure of InxGa1−xN layers and quantum wells (QWs) in relation to their optical properties. The microstructure of InxGa1−xN, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ∼10% In, suggesting band-edge luminescence. Layers with greater thickness and In content present a corrugated surface with numerous structural defects, including V-defects, causing redshifts and multi-peaks in photoluminescence up to 490 nm. These defects, resembling those in GaN, lead to a corrugated sample surface. Atomic force microscopy shows a 3.7-fold larger corrugation in samples with 20 QWs compared to those with 5 QWs measured on 2 × 2 μm2 areas. Like in GaN, dual growth on different crystallographic planes results in varied QW thicknesses, influencing optical traits of devices made from InxGa1−xN layers. The purpose of this review and the chosen subject is to highlight the significant contribution of Wladek Walukiewicz and his group to the current research on the properties of InxGa1−xN, which are crucial alloys in the field of optoelectronics. [ABSTRACT FROM AUTHOR]

GaN/AlxGa1−xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6–8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect due to the presence of the internal electric field which spatially separates the electron and hole wave functions. The growth conditions were optimized in view of minimizing the photoluminescence peak broadening. In particular, the impact of growth temperature (up to 900 °C) on the surface morphology, structural, and photoluminescence properties was studied. The diffusion of indirect excitons on the scale of tens of micrometers was measured with a micro-photoluminescence setup equipped with a spatially resolved detection. A dedicated model and its analysis allow us to extract from these measurements the exciton diffusion constant and to conclude on the optimum growth conditions for the GaN/AlxGa1−xN quantum well structures suited for studies of quantum collective effects in indirect exciton liquids. [ABSTRACT FROM AUTHOR]

Alkali metal dosing has nowadays been extensively used in angle-resolved photoemission spectroscopy (ARPES) for the in situ surface electron doping of materials to provide access to the unoccupied states. This technique also gives rise to nontrivial physical phenomena, such as the appearance of quantum well states and effects due to alkali metal intercalation. Here, we uncovered a previously unobserved type of electronic behavior induced by alkali metal dosing. By employing ARPES to study the evolution of the electronic structure of the Ti2O3 thin film upon rubidium (Rb) dosing, we found that the electron chemical potential of the system remains unchanged throughout the process. Interestingly, a series of electron-like band dispersions first appear with Rb dosing. A further increase in the Rb dosage leads to the eventual disappearance of the electron-like bands and the emergence of a set of hole-like bands. Our finding enriches the phenomenology brought about by alkali metal surface dosing, suggesting a novel functionality of this popular surface doping technique. [ABSTRACT FROM AUTHOR]

The effect of the GaAsP strain-compensating layer on type-II GaAs1−xSbx/InyGa1−yAs was investigated. GaAsSb/InGaAs multiple quantum wells (MQWs) without and with GaAsP strain-compensating layers were grown by molecular beam epitaxy. Increasing Sb or In compositions can extend photoluminescence (PL) emission at longer wavelength along with the highly induced compressive strain in the QWs. The power-dependent PL measured at low temperature reveals the type-II band characteristics of the GaAs1−xSbx/InyGa1−yAs system. A detailed analysis of the experimental data reveals that the GaAsP layers compensate the compressive strain of GaAsSb/InGaAs. The type-II QWs with GaAsP layers, (8 nm) GaAs0.84Sb0.16/(2.5 nm) In0.3Ga0.7As/(10 nm) GaAs0.85P0.15, emits PL at ∼1.1 μm, up to 210 K, while the PL of those strained sample without GaAsP vanishes at lower temperature. In view of the described sample, x-ray diffraction (XRD) analysis along with the simulation shows the validity of the procedure, resulting in nearly matched parameters of QW thicknesses and material compositions—(8.9 nm) GaAs0.835Sb0.165/(2.3 nm) In0.3Ga0.7As/(10.3 nm) GaAs0.85P0.15, with those of the designed QW. The thicknesses of QW from the TEM image, (8.6 nm) GaAsSb/(3.1 nm) InGaAs/(10.1 nm) GaAsP, agree well with the XRD results. [ABSTRACT FROM AUTHOR]

We introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S21 roll-off slower than −20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles. [ABSTRACT FROM AUTHOR]

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers. [ABSTRACT FROM AUTHOR]

The semiconductor quantum well based on mercury telluride is characterized by two distinct phases: conventional insulating phase and topological insulating phase with helical edge states. The system undergoes a topological quantum phase transition from one phase to the other, tuned by the critical geometric parameters of the quantum well. It is shown that the quantum states in each phase exhibit distinct flavors of Bloch oscillations, depending strongly on the geometric parameters and crystal momentum of the system. In particular, the group and Berry velocities and the real-space trajectories exhibit pronounced Bloch oscillations. Interestingly, the x - and y -components of the group velocity are interchanged by interchanging their corresponding components of the crystal momentum. In addition, a Gaussian wave packet undergoes distinct time evolution in each quantum phase of the HgTe quantum well. Moreover, the effects of applied in-plane electric and transverse magnetic fields are determined within the framework of Newtonian mechanics, leading to the geometric visualization of such an oscillatory motion. We find that in the presence of both applied in-plane electric and transverse magnetic fields simultaneously, the system undergoes a dynamic phase transition between confined and de-confined states, tuned by the relative strength of the fields. It is argued that the distinct Bloch oscillations originate from the peculiar band structure of HgTe quantum wells in each quantum phase. Furthermore, we find that the direct-current drift velocity in each quantum phase exhibits negative differential conductivity, a hallmark of the Bloch oscillation regime. [ABSTRACT FROM AUTHOR]

The high built-in polarization field is a fingerprint of III-nitride heterostructures. Alloy composition and doping profile significantly affect the magnitude of the electric field present in subsequent layers, but the sign of the electric field is usually defined by substrate polarity and external bias. Here, we propose to utilize acceptor and donor doping concentrations exceeding 1020 cm−3 to obtain a high junction field that can solely abolish built-in polarization for a polar (0001) InGaN/GaN quantum well (QW). We have used photoluminescence (PL), time-resolved PL (TRPL), and contactless electroreflectance in order to gain insight into the strength of the electric field present in the grown heterostructures. Good match between expected and measured electric field values was obtained. A dramatic decrease in the luminescence lifetime for a flat QW was confirmed using TRPL. The presented results open a way to realize devices that profit from the low built-in field, like photodetectors, using abundant polar substrates. [ABSTRACT FROM AUTHOR]

The quantum well diode (QWD) performs a dual role, functioning both as an emitter and a detector due to its unique feature of spectral overlap between emission and detection spectra. This dual functionality positions QWDs as promising candidates in the realm of multifunctional sensors. Furthermore, the well-established maturity of optical fiber communication, grounded in its intrinsic property of total reflection, makes it an ideal transmission medium for QWD sensing signals. Leveraging the coexisting emission and detection capabilities of QWDs, we have constructed a sensing system in this article. This system utilizes a QWD, which is stimulated to emit light, with the emitted light traveling through a specified length of optical fiber. A specialized load-bearing film, featuring an aluminum membrane on its rear to act as a mirror and an object of known weight on its front, induces deformation in the film, thereby altering the characteristics of the reflected light. This modulated light is subsequently captured by the QWD via the optical fiber, enabling the computation of the weight of the object. In this article, the QWD's emission peak is around 522 nm, and its detection range extends from 370 to 530 nm. Furthermore, by employing the appropriate approach, integrating QWD with optical fibers can be extended to sensing and measuring various physical quantities such as temperature, solution concentration, wind speed, and more. The advantages of QWDs include cost-effectiveness, multifunctionality, portability, and environmental friendliness. This technology represents a promising avenue for sensor control in the era of the Internet of Things. [ABSTRACT FROM AUTHOR]

The luminescence efficiency of AlxGa1−xN quantum dots (QDs) and quantum wells (QWs), buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm, has been investigated. The growth and optical properties have been done using similar aluminum composition (varying from 0.4 to 0.75) for both QDs and QWs. In order to compare as much as possible the optical properties, the QWs were fabricated with a growth time tuned such that the QW width is similar to the average height of the QDs. The photoluminescence (PL) showed emission ranging from 4 to 5.4 eV, putting into evidence differences in terms of full width at half maximum, PL intensity, and asymmetry of the line shape between QDs and QWs. The results show shorter wavelengths and a slightly narrower PL linewidth for QWs. To determine the light emission dependence with the electric field direction in the crystal, the evolutions of the emission diagrams for all samples were recorded along two orthogonal directions, namely, the "in-plane" (growth) and the "on-side" directions, from which the light emission was collected. For the whole QDs and QWs samples' series, the shapes of the emission diagram indicate emission in both in-plane and on-side directions, as evidenced by intra-valence band mixings caused by strain effects combined with the anisotropic Coulomb interactions that are particularly contributing to the polarization at wavelengths below 260 nm. Furthermore, the degree of polarization, determined for each sample, showed good agreement with results from the literature. [ABSTRACT FROM AUTHOR]

The polarization-induced quantum confined Stark effect has been recognized as a significant factor contributing to the Internal Quantum Efficiency (IQE) droop in light-emitting diodes (LEDs). This study focuses on the design of LEDs by investigating the InAlN/AlGaN interface. By incorporating InAlN quantum wells, a polarization-matched (PM) multi-quantum well (MQW) LED architecture was developed. While the flat conduction and valence bands on PM MQWs indicate an improved recombination rate, it is crucial to examine the impact on IQE, considering carrier confinement and injection efficiency influenced by the band offsets. This paper presents a numerical analysis comparing two LEDs emitting at 245 and 275 nm, respectively. The results demonstrate that the PM LED operating at 275 nm exhibits enhanced performance, benefiting from high probability density overlap. Conversely, the PM LED emitting at 245 nm demonstrates poor confinement, resulting in an overall low performance, regardless of polarization matching. [ABSTRACT FROM AUTHOR]

We present a setup for fast, low-bias (≤ 1 mV) DC transport measurements with μs time resolution for high ohmic resistance (≈ 20 k Ω) semiconducting samples. We discuss the circuitry and instrumentation for the measurement approach that can be applied to any kind of semiconductor device or (gated) two-dimensional material and demonstrate the main measurement artifacts in typical measurements by means of circuit simulation. Based on the latter, we present a simple two-step protocol for eliminating the measurement artifacts reliably. We demonstrate the technique by measuring the transitions between quantum Hall plateaus in the HgTe quantum wells and resolve plateaus as short-lived as 100 μs. [ABSTRACT FROM AUTHOR]

The characteristic polytype behaviors of SiC and accompanying low stacking fault energies are known to cause engineering issues, including polytype inclusions and bipolar degradation. The dependence of the relative stability of SiC polytypes and stacking fault energies on excess carrier concentration was investigated using first-principles calculations. The relative energy of 2H-, 4H-, and 6H-SiC to 3C-SiC increased with the excess electrons over 2 × 1019 cm−3, while the energy variation with excess holes was small. The stacking fault energies in 4H-SiC also exhibited a significant decrease with excess electrons over 1.0 × 1019 cm−3, whereas this change was minor with excess holes. These excess carrier dependencies were attributed to variations in the bandgap between polytypes. The energy level of the excess electrons was at the conduction band minimum; this was lowest in 3C-SiC, which had the lowest bandgap energy. Consequently, the energy of 3C-SiC with excess electrons was lower than that of other polytypes. Conversely, the valence band maximum lacked electrons when excess holes were present, resulting in a small difference among the Fermi levels of the polytypes. Hence, the energy difference between the SiC polytypes was similar for excess holes. Similarly, the stacking faults in SiC exhibited quantum-well structures by incorporating other polytypes with different bandgaps. With excess electrons, the Fermi level within the stacking faults was lower than that in the bulk crystals. Consequently, the stacking fault energy decreased for the same reason that the energy in 3C-SiC decreased under excess electron conditions. [ABSTRACT FROM AUTHOR]

This paper presents a novel physics-based analytical model for the injection recombination current in micro-light emitting diodes (μLEDs) with multiple quantum wells (MQWs), specifically excluding trap-assisted tunneling contributions at low forward voltages. The model simplifies the complex MQW structure by representing MQWs as a single equivalent quantum well (EQW). The μLED current is attributed to the recombination of injected holes and electrons within this EQW. Key parameters of the model encompass the EQW's position within the depletion region, hole diffusion coefficient, series resistance, and thermal resistance of the device. Experimental validation of the model is performed using current–voltage characteristics obtained from InGaN/GaN QW μLEDs. [ABSTRACT FROM AUTHOR]

Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs. [ABSTRACT FROM AUTHOR]

This work is devoted to finding the optimal parameters of the HgTe/CdHgTe multi-quantum-well structure for the generation of two-dimensional plasmon-phonons under optical excitation. It is shown that a decrease in the bandgap and an increase in the number of quantum wells lead to two consequences. The first is a decrease in the nonequilibrium carrier threshold concentration and the threshold power density of optical excitation required for the plasmon-phonon gain. The second is a significant (tens of times) decrease in the effective refractive index of the generated plasmon-phonons, which improves the output of the plasmon-phonon radiation from the edge of the structure. The value of the optimal bandgap and the optimal number of quantum wells in the structure for plasmon-phonon gain are discussed. [ABSTRACT FROM AUTHOR]

Site- and polarity-controlled core–shell InGaN/GaN nanorod LED structures were grown by metal organic vapor phase epitaxy on Si(111). Scanning transmission electron microscope images reveal uniform multiple quantum wells on polarization-free sidewalls. Spatially resolved photoluminescence mapping on a single nanorod demonstrates that the emission at 3.0 eV stems from the polarization-free m-plane, which is supported by a fast recombination lifetime of ∼490 ps at low temperatures. Quasi-resonant laser excitation demonstrates predominant radiative recombination at low excitation densities, whereas at high excitation densities, the efficiency is lowered by Auger recombination and/or carrier leakage. [ABSTRACT FROM AUTHOR]

The misfit dislocation formation related to plastic strain relaxation in Si or Ge quantum well layers in SiGe heterostructures for spin qubits tends to negatively affect the qubit behaviors. Therefore, it is essential to understand and then suppress the misfit dislocation formation in the quantum well layers in order to achieve high-performance qubits. In this work, we studied the misfit dislocation propagation kinetics and interactions by annealing the strained Si or Ge layers grown by molecular beam epitaxy. The annealing temperatures are from 500 to 600 °C for Si layers and from 300 to 400 °C for Ge layers. The misfit dislocations were investigated by electron channeling contrast imaging. Our results show that the misfit dislocation propagation is a thermally activated process. Alongside, the blocking and unblocking interactions during misfit dislocations were also observed. The blocking interactions will reduce the strain relaxation according to theoretical calculation. These observations imply that it is possible to suppress the misfit dislocation formation kinetically by reducing the temperatures during the SiGe heterostructure epitaxy and post-epitaxy processes for developing well-functional SiGe-based spin qubits. [ABSTRACT FROM AUTHOR]

In highly doped semiconductor quantum wells (QWs), electrons populate various energy states from different subbands and, therefore, several optical intersubband transitions (ISBTs) can occur simultaneously. Coulomb coupling between these ISBTs gathers the strength of all the individual transitions and concentrates all the oscillator strength in a single collective excitation: the multisubband plasmon (MSP). MSPs are an excellent platform for the study of collective and exotic effects in semiconductors and for the demonstration of novel device concepts. Indeed, the high electronic densities involved in the collective excitation greatly enhance the coupling strength and enable the ultra-strong coupling regime between MSPs and either optical modes in a cavity or phonons in the semiconductor. In this Perspectives paper, after addressing the basic physics of MSPs and the state of the art, we outline the most promising paths for the research community in this topic from the point of view of basic physics, material platforms, and applications of MSPs. [ABSTRACT FROM AUTHOR]

We consider the problem of analyzing spin-flip qubit gate operation in the presence of Random Telegraph Noise (RTN). Our compressive approach is the following. By using the Feynman disentangling operators method, we calculate the spin-flip probability of qubit driven by different kinds of composite pulses, e.g., Constant pulse (C-pulse), Quantum Well pulse (QW-pulse), and Barrier Potential pulse (BP-pulse) in the presence of RTN. When composite pulses and RTN act in the x-direction and z-direction respectively, we calculate the optimal time to achieve perfect spin-flip probability of qubit. We report that the highest fidelity of spin-flip qubit can be achieved by using C-pulse, followed by BP-pulse and QW-pulse. For a more general case, we have tested several pulse sequences for achieving high fidelity quantum gates, where we use the pulses acting in different directions. From the calculations, we find that high fidelity of qubit gate operation in the presence of RTN is achieved when QW-pulse, BP-pulse, and C-pulse act in the x-direction, y-direction, and z-direction, respectively. We extend our investigations for multiple QW and BP pulses while choosing the C-pulse amplitude constant in the presence of RTN. The results of calculation show that 98.5 % fidelity can be achieved throughout the course of RTN that may be beneficial for quantum error correction. [ABSTRACT FROM AUTHOR]

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active region carrier density (n), causing the electrical efficiency droop onset to occur at low current densities. Here, we present an approach to reduce the internal electric fields (Eint) in c-plane QWs by placing doped p-type and n-type GaN barriers close to the QW. The reduced Eint also allows a thick QW active region design, which helps to lower n to further reduce the droop. The concept of using doped barriers to control Eint is explained using theory and device simulations. Following that, multiple series of thick single QW (SQW) LEDs were grown and characterized. Key parameters in the epitaxial design such as the doping levels and the relative position of the doped barriers were systematically studied and optimized. By using optimized doped barriers and a thick SQW, c-plane LEDs with a low-efficiency droop of 14% at 300 A/cm2 [with respect to the peak external quantum efficiency (EQE)] and a high peak EQE of 49% were demonstrated. [ABSTRACT FROM AUTHOR]

Trench defects, resulting in low emission efficiency in green and longer spectrum ranges, are widely observed in III-nitride alloy multiple quantum wells (MQWs), particularly in those with high indium content. There is a lack of understanding of the atomic formation mechanism of trench defects; however, it is crucial to the efficiency of devices. Here, we provided a thermodynamic analysis through first-principles calculations based on the density functional theory combined with experimental confirmation to reveal the atomic formation mechanism of trench defects in the InGaN MQWs system. The In-rich region is easy to form and induces basal plane stacking faults (BSFs) at the interface between the InGaN quantum well and the GaN quantum barrier (QB). The boundary between BSF and non-BSF regions exhibits a much slower growth rate due to the formation of homoelementary bonds, resulting in a V-shaped groove shape. Based on high-angle annular dark field scanning transmission electron microscopy, we observe the trench defects originating from the thick GaN QB layer due to the formation of closed-loop V-shaped grooves and the BSF. Besides, the cathodoluminescence measurements show that the InGaN QW within the defect has excess indium and poor crystal quality. [ABSTRACT FROM AUTHOR]

III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocations. While most work to date has focused on 1.3 μm InAs/GaAs QDs, InP QDs have also aroused interest in lasers emitting at visible wavelengths. Molecular beam epitaxy (MBE) enables the growth of high-density InP/AlGaInP QDs on exact (001)-oriented GaAs substrates but requires a relatively low substrate temperature of <500 °C. The low substrate temperature used for phosphide growth in MBE leads to degraded optical properties and makes post-growth annealing a crucial step to improve the optical quality. Here, we report the exceptional thermal stability of InP/AlGaInP QDs grown using MBE, with up to 50× improvement in room temperature photoluminescence intensity with the optimization of annealing temperature and time. We also demonstrate the room temperature pulsed operation of InP multiple quantum dot (MQD) lasers on GaAs (001) emitting close to 735 nm with Jth values of 499 A/cm2 after annealing, a factor of 6 lower than their as-grown counterparts and comparable to such devices grown by MOCVD. In0.6Ga0.4P single quantum well (SQW) lasers on GaAs (001) also exhibit a substantial reduction in Jth from 340 A/cm2 as-grown to 200 A/cm2 after annealing, emitting at 680 nm under pulsed operation conditions. This work shows that post-growth annealing is essential for realizing record-performance phosphide lasers on GaAs grown by MBE for applications in visible photonics. [ABSTRACT FROM AUTHOR]

Ternary semiconductors such as InGaN thin films, quantum wells, and superlattices commonly exhibit alloy fluctuations that become increasingly pronounced with higher In-content. The thickness fluctuations of quantum wells and their thin cap-layers further introduce nanoscale inhomogeneities that alter the potential landscape. In this work, we present a combined theoretical and experimental study of InGaN single quantum wells with thin GaN cap-layers to unravel the influence of cap-layer thickness, compositional inhomogeneity, and thickness fluctuations on their electronic and optical properties. A pronounced spectral shift of quantum well emission for thin cap-layers between 1 and 10 nm is observed by micro-photoluminescence spectroscopy. The origin of this shift is explained by calculations of electronic band profiles and probability density overlap of carriers in the quantum well. The impact of alloy fluctuations and homogeneity for different cap-layer thicknesses is studied on both the microscale and nanoscale using UV micro-Raman scattering and tip-enhanced Raman spectroscopy (TERS). On the microscale, the alloy composition as determined by micro-Raman mapping appears very homogeneous except for the thinnest 1 nm cap-layer where small fluctuations are visible. On the nanoscale, TERS reveals local fluctuations on a 20–30 nm length scale. The influence of the cap-layer thickness on the TERS spectra is discussed regarding both the nanoscale homogeneity and the depth resolution of the near-field Raman scattering technique. Our results demonstrate the capabilities of TERS to resolve nanoscale thickness fluctuations and compositional inhomogeneities in ultra-thin semiconductor layers, even when they are buried by thin cap-layers with thicknesses below 10 nm. [ABSTRACT FROM AUTHOR]

Silicon photonics is a promising technology for the fabrication of dense photonic chips, thanks to the very mature silicon industry. The direct epitaxial growth of III–V lasers on silicon is one of the main challenges for the realization of compact and robust mid-infrared sensors based on photonic integrated circuits. The crystal defects arising from this heteroepitaxial growth affect the laser performance and, therefore, need to be mitigated but also studied to better understand their impact on the laser operation. Here, we studied the effect of threading dislocations on laser performance by comparing the series of GaSb-based diode lasers grown on native GaSb and Si substrates with different numbers of quantum wells (nQW) in their active zones. As expected, the laser threshold currents are higher in the case of diode lasers on Si, and they rapidly vary with nQW. Still, the lowest threshold current densities are achieved with nQW = 1 for both substrates. With the help of a theoretical gain model, we attribute these results to the fact that dislocations create non-radiative recombination but do not introduce additional optical losses. This work allows a better understanding of the origin of performance degradation and the decision to be made regarding the heterostructure design. [ABSTRACT FROM AUTHOR]

MgZnO barriers are commonly applied to passivate wurtzite ZnO films to enhance electron mobility, while the Mg mole fraction x is usually controlled below 0.4 to avoid phase separation. Few theoretical analyses have focused on electron mobility at large x since the phase separation leads to a complex scattering mechanism. This work investigates the effects of asymmetric MgZnO barriers on electron mobility, which is one source of complexity. Four asymmetric quantum wells simultaneously contribute to the electron mobility in proportions when the wurtzite and rock salt coexist in the mixed-phase MgZnO barriers with large Mg mole fractions. Besides, built-in electric fields also contribute to the asymmetry by tilting the bands. The polar optical phonon-limited electron mobility in asymmetric MgxZn1−xO/ZnO/Mg0.45Zn0.55O quantum wells is simulated between 176 and 333 cm2/V s as x ranges from 0.1 to 1. Our calculations show that confined optical phonons play a leading role in the quantum well with wurtzite barriers. Interface optical phonons are primary in the wells with rock salt barriers since most electrons are pushed close to the interface by the strong built-in electric field. The results indicate that wurtzite barriers are more favorable to achieving stable high mobility above 238 cm2/V s as the Mg mole fraction ranges from 0.14 to 0.33, which is commonly applied in practice. [ABSTRACT FROM AUTHOR]

Although surface plasmon (SP) coupling has been widely used for enhancing the emission efficiency of an InGaN/GaN quantum well (QW) structure, the interplay of the carrier transport behavior in the QW with SP coupling, which is a crucial mechanism controlling the SP-coupling induced QW emission enhancement, is still an issue not well explored yet. To understand the effects of SP coupling on the radiative and non-radiative recombination behaviors of carriers in a QW structure, the temperature-dependent time-resolved photoluminescence spectroscopies of two QW samples of different indium contents with surface Ag nanoparticles are studied. A two-single-exponential model is used for calibrating their radiative and non-radiative decay times. The SP coupling process, which transfers carrier energy from a QW into the SP resonance mode for effective radiation and increases the effective radiative recombination rate, produces energy-dependent carrier depletion and, hence, disturbs the quasi-equilibrium condition of carrier distribution. In this situation, a strong carrier transport process occurs targeting a new quasi-equilibrium condition that enhances non-radiative recombination and, hence, reduces the benefit of using the SP coupling technique. To alleviate this problem of SP-coupling induced energy loss, a weak energy-dependent or broad-spectrum SP coupling process is recommended. [ABSTRACT FROM AUTHOR]

A model for analyzing dynamic large-signal characteristics of double-barrier resonant-tunneling diodes (RTDs) is presented. The model is based on the analysis of dynamical trajectories in phase space, defined by the RTD bias and electron density in the RTD quantum well. We show that an accurate dynamic model can be reformulated in an approximate way, relying only on a directly measurable DC I–V curve and on few other RTD parameters, which could be easily estimated with simple DC calculations. We further demonstrate that a simple equivalent circuit, composed of a capacitor, inductor, and two resistors (RLRC), accurately describes the large-signal admittance of RTDs. The circuit elements can be described in terms of relaxation time, geometrical RTD capacitance, and low- and high-frequency resistors. The circuit has the very same structure as that previously derived for small-signal RTD admittance, although with deviating parameters, which are now dependent on the AC-signal amplitude. We show that the large-signal RTD relaxation time can be shorter and longer than the small-signal one. In the context of RTD oscillators, a shorter RTD relaxation time allows one to get higher output power at high frequencies. The availability of an accurate, general, but rather simple, physics-based model for analyzing large-signal RTD dynamics removes one of the major hindrances to the further development of sub-THz and THz RTD oscillators. [ABSTRACT FROM AUTHOR]

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which has enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs or for multi-quantum well LEDs. In this work, we show that incorporating low and high indium compositions within quantum wells at the submicrometer scale can provide an accurate prediction of the characteristics of GaN/InGaN light emitting diodes. [ABSTRACT FROM AUTHOR]

Magneto-intersubband resistance oscillations (MISOs) of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands are studied in magnetic fields B = (B ⊥ , B ∥) tilted from the normal to the 2D electron layer at different temperatures T. The in-plane component (B ∥) of the field B induces magnetic entanglement between subbands, leading to beating in oscillating density of states (DOS) and to MISO suppression. Model of the MISO suppression is proposed. Within the model, a comparison of MISO amplitude in the entangled and disentangled (B ∥ = 0) 2D systems yields both difference frequency of DOS oscillations, d f , and strength of the electron–electron interaction, described by parameter ε F ∗ , in the 2D system. These properties are analyzed using two methods, yielding consistent but not identical results for both d f and ε F ∗. The analysis reveals an additional angular dependent factor of MISO suppression. The factor is related to spin splitting of quantum levels in magnetic fields. [ABSTRACT FROM AUTHOR]

Liquid crystal (LC) materials exhibit interesting electro-optic switching and molecular ordering properties. Furthermore, the addition of chemically compatible active emitters such as core-shell quantum dots (QD) in a LC medium allows optical as well as dielectric tuning in an anisotropic, reconfigurable ordered medium. Order in a nematic LC phase is characterized by an orientational order parameter. In this work, we demonstrate the use of patterned substrates to generate arrays of integer topological defects in a nematic LC medium doped with cadmium selenide (core) cadmium sulfide (shell) core–shell QDs. We demonstrate the formation of metastable air-pillar-induced integer topological defects (TDs) in relatively thinner 9 μm LC sandwich cells, and the formation of field-induced TDs in thicker (25 μm) cells. Simultaneously, the self-assembly of core-shell QDs into square arrays on the patterned substrates is discussed, highlighting potential electro-optic device applications. The surfactant hexadecyltrimethylammonium bromide (CTAB) is found to play a significant role in LC TD formation as well as QD spatial organization at the optimized concentration. Self-assembly and ordering of single- and multi-component LCs within structured devices is a highly relevant problem for modern optoelectronic devices. This work opens new possibilities for classical as well as quantum light sources which require spatially ordered optical emitters in a reconfigurable dielectric medium at a micron-scale. [ABSTRACT FROM AUTHOR]

While it is known that a resonant amplification of T c in two-gap superconductors can be driven by using the Fano–Feshbach resonance tuning the chemical potential near a Lifshitz transition, little is known on tuning the T c resonance by cooperative interplay of the Rashba spin–orbit coupling (RSOC) joint with phonon mediated (e-ph) pairing at selected k-space spots. Here, we present first-principles quantum calculation of superconductivity in an artificial heterostructure of metallic quantum wells with 3 nm period where quantum size effects give two-gap superconductivity with RSOC controlled by the internal electric field at the interface between the nanoscale metallic layers intercalated by insulating spacer layers. The key results of this work show that fundamental quantum mechanics effects including RSCO at the nanoscale [Mazziotti et al., Phys. Rev. B, 103, 024523 (2021)] provide key tools in applied physics for quantitative material design of unconventional high temperature superconductors at ambient pressure. We discuss the superconducting domes where T c is a function of either the Lifshitz parameter (η) measuring the distance from the topological Lifshitz transition for the appearing of a new small Fermi surface due to quantum size effects with finite spin–orbit coupling and the variable e-ph coupling g in the appearing second Fermi surface linked with the energy softening of the cut off ω 0. [ABSTRACT FROM AUTHOR]

GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31 V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages. [ABSTRACT FROM AUTHOR]

Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties. [ABSTRACT FROM AUTHOR]

Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few micrometers has been a challenging task due to the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidate these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1/21.5 nm Ge/Si0.18Ge0.82 superlattices (SLs) with a total thickness of 16 μm corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si–Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si0.18Ge0.82 layers; however, the dislocation pileup at the interface with the growth substrate induces micrometer-long cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in shaping the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices. [ABSTRACT FROM AUTHOR]

We propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. A model for accounting for hot phonons is developed for calculating the nonequilibrium temperature of electrons and holes. Using a comprehensive model accounting for carrier drift and diffusion, Auger recombination, and hot-phonon effects, we predict of lasing at λ ∼ 3 μ m at room temperature in the 2.1 nm HgTe/Cd 0.85 Hg 0.15 Te quantum well heterostructure. The output power in the pulse can reach up to 600 mW for 100 nanosecond-duration pulses. [ABSTRACT FROM AUTHOR]

To establish a correlation between spin diffusion, spin lifetime, and electron density, we study spin polarization evolution in low-dimensional GaAs semiconductors hosting two-dimensional electron gases by employing time-resolved magneto-optical Kerr effect microscopy. It is shown that for the establishment of the longest spin-lifetime, the variation in the scattering rate with electron density is of more importance than fulfilling the persistent spin helix condition when the Rashba α and Dresselhaus β parameters are balanced. More specifically, regardless of α and β linear dependencies on the electron density, the spin relaxation rate is determined by the spin diffusion coefficient that depends on electron density nonmonotonously. The longest experimental spin-lifetime occurs at an electron density, corresponding to transition from Boltzmann to Fermi–Dirac statistics, which is several times higher than that when the persistent spin helix is expected. These facts highlight the role the electron density may play when considering applications for spintronic devices. [ABSTRACT FROM AUTHOR]