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The anodic-oxide-induced interdiffusion was evaluated in relation to the impurity-free interdiffusion in GaAs/AlGaAs quantum well system. A segment of the GaAs cap layer of the quantum well structure was anodically oxidized wherein the oxide improved the interdiffusion at high temperature. It was observed that the residual water in the anodic oxide caused further interdiffusion but was not the primary determinant of the anodic-oxide-induced interdiffusion.

Effects of anodic oxide caused intermixing on the structural and optical characteristics of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate were studied. A substantial improvement of QWR photoluminescence (PL) was observed accompanied by a blueshift of the sidewall quantum well PL due to the intermixing. Also, an extended neck region is seen after the intermixing by spatially resolved cathodoluminescence.

Intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum well structures after rapid thermal annealing with and without an anodic oxide cap on the surface was studied by low temperature (8 K) photoluminescence (PL). The PL peak energy was shifted towards higher photon energies (blueshift) in both types of samples, especially at annealing temperatures above 880°C. The anodic oxide cap has been demonstrated to inhibit the band-gap blueshift of the quantum well structures. Secondary ion mass spectroscopy data indicated that Ga vacancies were injected from the anodic oxide cap into the epitaxial layers. These vacancies enhanced interdiffusion between group III atoms, and partially relaxed the strain in the structure, resulting in the effect of the suppression of the blueshift. [ABSTRACT FROM AUTHOR]

A GaInP/ A1GaInP multiple quantum well laser structure was grown by low pressure metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine.

Presents information on a study which measured the phototransmission (PT) of stained-layer indium[subx] gallium[1-x] arsenide/gallium arsenide single quantum well structures. Details of the experimental set-up; Features of the excitons in the well at room temperature; Least-squares fit of the PT spectrum of the strained-layer indium[subx] gallium[1-x] arsenide/gallium arsenide.