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Presents a study which examined high-quality molecular-beam epitaxial (MBE) regrowth of (Al[sub5]Ga)As on gallium arsenide (GaAs). Method used in high-quality MBE regrowth; Experiment on the regrowth of gallium arsenide surface; Summary of the surface reconstruction observed by reflection high-energy electron diffraction during the regrowth of GaAs.

Investigates the growth of III-V materials by molecular-beam epitaxy using reflection high-energy electron diffraction intensity oscillations. Influence of the three main growth parameters on the zinc selenide growth rate; Overview of zinc sticking coefficient versus growth temperature.

Investigates the factors determining the interface quality in II-VI and III-V compound semiconductors such as zinc selenide and gallium arsenide (GaAs). Issue on polar heteroepitaxy between compound semiconductors; Polar heteroepitaxial configuration of GaAs surface; GaAs growth on zinc selenide.