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Research into the feasibility of a spin-dependent tunneling read head with a parallel hard bias is presented. It was found that the junction with 400 angstroms permanent magnet has a linear response, while the device with 200 angstroms permanent magnet produces Barkhausen jumps in the free layer.

A study was conducted to analyze FeTaN films supporting moderate B(sub s) of 14 kG and high resistivity of 100 to 150 mu-ohm. Experimental results indicated that the optimization of the soft magnetic characteristics correlated with an expanded crystal lattice. The films supported a nearly amorphous grain structure. In addition, the low atomic mobility of the sputtered atoms was needed to promote the formation of the phase.

Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (x) from 11% up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (Z*T) values of the n-Al1-xInxN alloys were measured as high as 0.391 up to 0.532 at T = 300 K. The use of high In-content (x = 21.34%) AlInN alloys leads to significant reduction in thermal conductivity [κ = 1.62 W/(mK)] due to the increased alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17% attributed to its large power factor. [ABSTRACT FROM AUTHOR]

Presents a study that investigated the writing properties of a set of thin-film heads using the magnetic force microscopy technique. Properties of narrow track thin-film heads; Information on track edge percolation.