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A new study seeks to develop a hypothesis that will describe the primary features of the failure wave phenomenon in shocked glasses.

Research was conducted to prove that the scalability of the Ti-silicidation process will be hampered by the local mechanical stress induced during the silicidation reaction even after the introduction of a preamorphization method to enhance the C54 TiSi2 nucleation. Results provide evidence that a higher stress is produced in the silicon substrate during the Ti salicidation than during the low stress Co/Ti-salicidation process.

The electric field (E) and velocity (v) which were calculated from falling ball experiments show two kinds of retarding forces E(2) and vE(2). E(2) is related to sheer stress, varies with volume fraction and is independent of particle size, while vE(2) is proportional to particle size and volume. The forces in E(2) deal with chain stretching and breaking at constant temperatures, while the impact action on chains influences vE(2).

Factors influencing the spread of voids in interconnecting lines were determined and characterized by using simple theoretical models. Earlier studies in this field were also analyzed by explaining the redistribution of stress induced by the existence of a void in the line and by the progressive reduction of stress by the increase in the void. The variation in stress and strain around the void were computed as a function of time. The rate of void growth was also measured.

Micro-Raman spectroscopy was used to analyze stress distribution in local isolation structures and the results were correlated with transmission electron microscopy observations. The results showed that the effect of the periodic local isolation pattern pitch was significant. Compressive stress was observed to be present in the Si substrate.The largest concentration of tensile stress was seen under the bird's beak.