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We present a continuous surface-potential-based compact model for molybdenum disulfide (MoS2) field effect transistors based on the multiple trapping release theory and the variable-range hopping theory. We also built contact resistance and velocity saturation models based on the analytical surface potential. This model is verified with experimental data and is able to accurately predict the temperature dependent behavior of the MoS2 field effect transistor. Our compact model is coded in Verilog-A, which can be implemented in a computer-aided design environment. Finally, we carried out an active matrix display simulation, which suggested that the proposed model can be successfully applied to circuit design.

A surface potential based physical compact model for a graphene field effect transistor is proposed, including Boltzmann transport and thermally activated transport. We verified it by the experiments and Gummel symmetry test, showing good accuracy and continuity over a wide range of operation regions. Coded in Verilog-A, this model provides physics-based consistent DC and AC characteristics, which can be easily embedded into a vendor CAD tool to simulate circuits. Based on this model, a direct insight into the relationship between physical parameters and circuit performances can be achieved.