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First-principles calculations of defects and electron–phonon interactions play a critical role in the design and optimization of materials for electronic and optoelectronic devices. The late Audrius Alkauskas made seminal contributions to developing rigorous first-principles methodologies for the computation of defects and electron–phonon interactions, especially in the context of understanding the fundamental mechanisms of carrier recombination in semiconductors. Alkauskas was also a pioneer in the field of quantum defects, helping to build a first-principles understanding of the prototype nitrogen-vacancy center in diamond, as well as identifying novel defects. Here, we describe the important contributions made by Alkauskas and his collaborators and outline fruitful research directions that Alkauskas would have been keen to pursue. Audrius Alkauskas’ scientific achievements and insights highlighted in this article will inspire and guide future developments and advances in the field.

Aiming at exploring whether the Janus structure is beneficial to improving the thermoelectric (TE) performance, we systematically study the TE properties of the α -Se-monolayer-based Janus structures including α - SSe 2 and α - TeSe 2 monolayers. In comparison with the semiconducting α -Se monolayer, the Janus α - SSe 2 and α - TeSe 2 monolayers are still kept to be indirect semiconductors but with suppressed energy bandgaps. Moreover, the phononic thermal conductance will be suppressed with other parameters like Seebeck coefficients, electrical conductances, and electronic thermal conductances being changed correspondingly. The TE figures of merit Z T s of the Janus α - SSe 2 and α - TeSe 2 monolayers are always greater than that of the α -Se monolayer, indicating that the Janus structure should be a potential scheme used to improve the TE performance of materials. [ABSTRACT FROM AUTHOR]

X-ray self-heating is a common by-product of X-ray Free Electron Laser (XFEL) techniques that can affect targets, optics, and other irradiated materials. Diagnosis of heating and induced changes in samples may be performed using the x-ray beam itself as a probe. However, the relationship between conditions created by and inferred from x-ray irradiation is unclear and may be highly dependent on the material system under consideration. Here, we report on a simple case study of a titanium foil irradiated, heated, and probed by a MHz XFEL pulse train at 18.1 keV delivered by the European XFEL using measured x-ray diffraction to determine temperature and finite element analysis to interpret the experimental data. We find a complex relationship between apparent temperatures and sample temperature distributions that must be accounted for to adequately interpret the data, including beam averaging effects, multivalued temperatures due to sample phase transitions, and jumps and gaps in the observable temperature near phase transformations. The results have implications for studies employing x-ray probing of systems with large temperature gradients, particularly where these gradients are produced by the beam itself. Finally, this study shows the potential complexity of studying nonlinear sample behavior, such as phase transformations, where biasing effects of temperature gradients can become paramount, precluding clear observation of true transformation conditions. [ABSTRACT FROM AUTHOR]

The Microwave SQUID Multiplexer (μ MUX) is the device of choice for the readout of a large number of low-temperature detectors in a wide variety of experiments within the fields of astronomy and particle physics. While it offers large multiplexing factors, the system noise performance is highly dependent on the cold- and warm-readout electronic systems used to read it out, as well as the demodulation domain and parameters chosen. In order to understand the impact of the readout systems in the overall detection system noise performance, first, we extended the available μ MUX simulation frameworks, including additive and multiplicative noise sources in the probing tones (i.e., phase and amplitude noise), along with the capability of demodulating the scientific data, either in the resonator's phase or the scattering amplitude. Then, considering the additive noise as a dominant noise source, the optimum readout parameters to achieve minimum system noise were found for both open-loop and flux-ramp demodulation schemes in the aforementioned domains. Later, we evaluated the system noise sensitivity to multiplicative noise sources under the optimum readout parameters. Finally, as a case study, we evaluated the optimal demodulation domain and the expected system noise level for a typical software-defined radio readout system. This work leads to an improved system performance prediction and noise engineering based on the available readout electronics and the selected demodulation domain. [ABSTRACT FROM AUTHOR]

Achieving high material perfection in aluminum (Al) films and their associated Al/AlOx heterostructures is essential for enhancing the coherence time in superconducting quantum circuits. We grew Al films with thicknesses ranging from 3 to 30 nanometers (nm) epitaxially on sapphire substrates using molecular beam epitaxy (MBE). An integral aspect of our work involved electron-beam (e-beam) evaporation to directly deposit aluminum oxide (Al2O3) films on the freshly grown ultrathin epitaxial Al films in an ultra-high-vacuum (UHV) environment. This in situ oxide deposition is critical for preventing the oxidation of parts of the Al films, avoiding the formation of undesired native oxides, and thereby preserving the nm-thick Al films in their pristine conditions. The thicknesses of our Al films in the study were accurately determined; for example, coherence lengths of 3.0 and 20.2 nm were measured in the nominal 3.0 and 20 nm thick Al films, respectively. These Al films were epitaxially grown on sapphire substrates, showing an orientational relationship, denoted as Al (111) ⟨ 2 1 ¯ 1 ¯ ⟩ ∥ sapphire (0001) [ 2 1 ¯ 1 ¯ 0 ]. The Al/sapphire interface was atomically ordered without any interfacial layers, as confirmed by in situ reflection high-energy electron diffraction (RHEED) and cross-sectional scanning transmission electron microscopy (STEM). All sample surfaces exhibited smoothness with a roughness in the range of 0.1–0.2 nm. The Al films are superconducting with critical temperatures ranging from 1.23 to around 2 K, depending on the film thickness. [ABSTRACT FROM AUTHOR]

Shock experiments are widely used to understand the mechanical and electronic properties of matter under extreme conditions. However, after shock loading to a Hugoniot state, a clear description of the post-shock thermal state and its impacts on materials is still lacking. We used diffraction patterns from 100-fs x-ray pulses to investigate the temperature evolution of laser-shocked Al–Zr metal film composites at time delays ranging from 5 to 75 ns driven by a 120-ps short-pulse laser. We found significant heating of both Al and Zr after shock release, which can be attributed to heat generated by inelastic deformation. A conventional hydrodynamic model that employs (i) typical descriptions of Al and Zr mechanical strength and (ii) elevated strength responses (which might be attributed to an unknown strain rate dependence) did not fully account for the measured temperature increase, which suggests that other strength-related mechanisms (such as fine-scale void growth) could play an important role in thermal responses under shock wave loading/unloading cycles. Our results suggest that a significant portion of the total shock energy delivered by lasers becomes heat due to defect-facilitated plastic work, leaving less converted to kinetic energy. This heating effect may be common in laser-shocked experiments but has not been well acknowledged. High post-shock temperatures may induce phase transformation of materials during shock release. Another implication for the study is the preservability of magnetic records from planetary surfaces that have a shock history from frequent impact events. [ABSTRACT FROM AUTHOR]

Some spinel chromium oxides with the chemical formula ACr2O4 exhibit magnetic-induced multiferroicity due to the special spiral spin order. However, because of the relatively low temperature of the ordered spiral phase, this kind of multiferroicity generally displays a limited coexistence of magnetic and ferroelectric orders in a narrow temperature range. The Jahn–Teller (JT) effect, serving as a crucial link between charge and orbit degrees of freedom, can facilitate efficient modulation of multiferroic properties. In this work, Ni1−xCuxCr2O4 (0 ≤ x ≤ 0.2) series are synthesized by occupying the same Wyckoff site with two kinds of JT ions. The microstructure and JT distortion can be distinctly influenced by varying the doping level of Cu2+ ions. Particularly, Ni0.85Cu0.15Cr2O4 (x = 0.15) presents the pronounced JT distortion, accompanied by observation of dielectric anomaly at ∼78 K, resulting from spin–orbit coupling. This implies that the JT effect can significantly promote the contribution of spin–orbit coupling in magnetoelectric correlation. Moreover, the magnetodielectric effect induced by intrinsic magnetoelectric coupling is confirmed in Ni0.85Cu0.15Cr2O4 over a wide temperature range of 10–200 K, which is much higher than the Néel temperature of ∼85 K. It indicates that spin–orbit coupling based on the JT effect could overcome the constraint of magnetic order to achieve effective control on electric polarization performance under an applied magnetic field, thereby showing broad application prospects. [ABSTRACT FROM AUTHOR]

The multiferroic Y-type hexaferrites BaxSr2−xMe2Fe12−yAlyO22 (Me = Zn2+, Co2+, Mg2+, etc.) have attracted much attention due to their giant magnetoelectric (ME) effect up to room temperature and low modulated magnetic field by the chemical doping control of the complex magnetic phases. However, the research of substitution between the Me ions is rare. As doping at the Me ion site can combine the advantages of both, e.g., higher magnetic ordering temperature in Co2 and stronger ME coefficient in Mg2 Y-type hexaferrites, herein, we report the stability and switching of magnetoelectric states in the Y-type hexaferrites Ba0.5Sr1.5CoMgFe11AlO22 single crystals. Our results demonstrate that substituting half of the Mg2+ with Co2+ enhances the transition temperature of the alternating longitudinal conical phase to proper screw spin order up to room temperature compared to those Mg2 Y-type hexaferrites. Simultaneous occurrence of in-plane and out-of-plane ferroelectric polarization is observed, alongside comparable spontaneous magnetization. It was found that the in-plane spin-driven polarization can be reversible below 50 K with a substantial ME coefficient α = −8000 ps/m but becomes irreversible at 100 K. This reversal in the sign of the ME coefficient signifies the transition between two distinct ME states at high temperature. The reversibility and irreversibility of spin-induced polarization are discussed within the framework of free energy based on the ferroelectric phase, which prevail in numerous Y-type hexaferrites. Our results provide insights into understanding the role of the Me ions in the magnetoelectric coupling in Y-type hexaferrites. [ABSTRACT FROM AUTHOR]

The ability to control the behavior of fluid instabilities at material interfaces, such as the shock-driven Richtmyer–Meshkov instability, is a grand technological challenge with a broad number of applications ranging from inertial confinement fusion experiments to explosively driven shaped charges. In this work, we use a linear-geometry shaped charge as a means of studying methods for controlling material jetting that results from the Richtmyer–Meshkov instability. A shaped charge produces a high-velocity jet by focusing the energy from the detonation of high explosives. The interaction of the resulting detonation wave with a hollowed cavity lined with a thin metal layer produces the unstable jetting effect. By modifying the characteristics of the detonation wave prior to striking the lined cavity, the kinetic energy of the jet can be enhanced or reduced. Modifying the geometry of the liner material can also be used to alter jetting properties. We apply optimization methods to investigate several design parameterizations for both enhancing or suppressing the shaped-charge jet. This is accomplished using 2D and 3D hydrodynamic simulations to investigate the design space that we consider. We also apply new additive manufacturing methods for producing the shaped-charge assemblies, which allow for the experimental testing of complicated design geometries obtained through computational optimization. We present a direct comparison of our optimized designs with experimental results carried out at the High Explosives Application Facility at Lawrence Livermore National Laboratory. [ABSTRACT FROM AUTHOR]

The multiferroic Y-type hexaferrites BaxSr2−xMe2Fe12−yAlyO22 (Me = Zn2+, Co2+, Mg2+, etc.) have attracted much attention due to their giant magnetoelectric (ME) effect up to room temperature and low modulated magnetic field by the chemical doping control of the complex magnetic phases. However, the research of substitution between the Me ions is rare. As doping at the Me ion site can combine the advantages of both, e.g., higher magnetic ordering temperature in Co2 and stronger ME coefficient in Mg2 Y-type hexaferrites, herein, we report the stability and switching of magnetoelectric states in the Y-type hexaferrites Ba0.5Sr1.5CoMgFe11AlO22 single crystals. Our results demonstrate that substituting half of the Mg2+ with Co2+ enhances the transition temperature of the alternating longitudinal conical phase to proper screw spin order up to room temperature compared to those Mg2 Y-type hexaferrites. Simultaneous occurrence of in-plane and out-of-plane ferroelectric polarization is observed, alongside comparable spontaneous magnetization. It was found that the in-plane spin-driven polarization can be reversible below 50 K with a substantial ME coefficient α = −8000 ps/m but becomes irreversible at 100 K. This reversal in the sign of the ME coefficient signifies the transition between two distinct ME states at high temperature. The reversibility and irreversibility of spin-induced polarization are discussed within the framework of free energy based on the ferroelectric phase, which prevail in numerous Y-type hexaferrites. Our results provide insights into understanding the role of the Me ions in the magnetoelectric coupling in Y-type hexaferrites. [ABSTRACT FROM AUTHOR]

The mechanisms contributing to the electromechanical response of piezoelectric ceramics in the shear mode have been investigated using high-energy synchrotron x-ray diffraction. Soft lead zirconate titanate ceramic specimens were subjected to an electric field in the range 0.2–3.0 MV m−1, perpendicular to that of the initial poling direction, while XRD patterns were recorded in transmission. At low electric field levels, the axial strains remained close to zero, but a significant shear strain occurred due to the reversible shear-mode piezoelectric coefficient. Both the axial and shear strains increased substantially at higher field levels due to irreversible ferroelectric domain switching. Eventually, the shear strain decreased again as the average remanent polarization became oriented toward the electric field direction. The lattice strain and domain orientation distributions follow the form of the total strain tensor, enabling the domain switching processes to be monitored by the rotation of the principal strain axis. Reorientation of this axis toward the electric field direction occurred progressively above 0.6 MV m−1, while the angle of rotation increased from 0° to approximately 80° at the maximum field of 3.0 MV m−1. A strong correlation was established between the effective strains associated with different crystallographic directions, which was attributed to the effects of elastic coupling between grains in the polycrystal. [ABSTRACT FROM AUTHOR]

We report on the implementation of a terahertz two-photon quantum cascade laser operating in a continuous wave mode. Lasers that can emit two photons as a result of the relaxation of a single electron between two states of the same parity have been discussed since the early days of the laser era, but implementation has been hampered by the lack of a suitable gain medium. The semiconductor structure of a quantum cascade laser seems to be an ideal medium for realizing such two-photon emission. Our work demonstrates dual-band laser radiation in the range of 3.1–3.9 THz (104–130 cm−1) at temperatures up to 90 K. [ABSTRACT FROM AUTHOR]

The editorial in the Journal of Applied Physics discusses the importance of defects in semiconductor materials for designing semiconductor-based devices. It covers various types of defects, their impact on device performance, and advancements in defect modeling and experimentation. The document also highlights research areas such as defects in oxides, III-V semiconductors, silicon carbide, 2D materials, and detector/absorber materials. The study emphasizes the ongoing research in understanding defects in semiconductors and their implications for fields like quantum information science, power electronics, and energy storage and conversion. [Extracted from the article]

Based on experimental data, we propose a model to evaluate the energy dissipated during quantum tunneling processes in solid-state junctions. This model incorporates a nonlinear friction force expressed in the general form f (x) = γ v (x) α , where γ is the frictional coefficient, which is fitted to data. We study this by applying voltages just below the barrier height up to near breakdown voltages. Furthermore, by lowering the temperature and adjusting the applied voltage to the junction, the effect on dissipation caused by the variation in barrier height is examined. We underline that the crucial dependency of dissipation on the fraction of particle energy lost is modulated by two primary mechanisms: the application of voltage and the variation of temperature. The fraction of energy dissipated decreases, in general, for increasing energies of the tunneling particles at a given temperature. However, for a given energy of the tunneling particle, the present work demonstrates a turning point at a temperature of 137 K, after which the dissipated energy starts increasing for higher temperatures. The latter can possibly be due to the increase of electron–phonon interactions, which become predominant over barrier height reduction at higher temperatures, and hence, we identify T = 137 K as a critical temperature for a change in the dissipative characteristics of the solid-state junction under consideration. Notably, the study also identifies significant changes in dissipation parameters, γ and α, above 137 K, exhibiting a linear decline and underscoring the importance of further research at higher temperatures. [ABSTRACT FROM AUTHOR]

Forthcoming infrared event-based sensors will have utility in the space-based surveillance domain where they could potentially perform traditional sensing and tracking functions with significantly enhanced temporal resolution and reduced downstream datalink demands and power consumption. As a first step toward extending event-based sensing technology into the mid-wave infrared, a DC simulation of the conventional event-based sensor unit cell's photoreceptor circuit is performed, and the results are compared with measurements of a printed circuit board implementation of the same circuit to assess what design freedom is available to interface the photoreceptor with a mid-wave infrared photodetector. Detailed analysis of the circuit and measurements provides insight into which fundamental properties of the transistors drive the photoreceptor's dynamic range and demonstrates several characteristics that are relevant to mid-wave infrared sensing. These characteristics include the capability to produce a stable, low voltage bias on the infrared photodetector to maximize sensitivity, and that operating the circuit below room temperature increases the photoreceptor's dynamic range. Measurements show that even the simplest implementation of the photoreceptor circuit exhibits a dynamic range of logarithmic compression of 150 dB at room temperature. However, the dynamic range is ultimately limited by the mid-wave infrared photodetector's dark current activation energy, which is significantly lower than the threshold voltage (energy) of the photoreceptor's feedback transistor and, thus, there is an incentive for the photodetector's dark current to be diffusion-limited. [ABSTRACT FROM AUTHOR]

There is an important difference between piezoelectric polymer films and solid crystals for the application of piezoelectric generators. In the case of polymers, the optimal piezoelectric response imposes a large bending regime. Starting from the linear Curie's constitutive equations, we develop an analytical model under the assumption of the large bending regime resulting from bulge testing configuration. This model shows a specific non-linear piezoelectric response, which follows a power of 2 / 3 of the mechanical excitation. The piezoelectric voltage and the corresponding power are then studied experimentally as a function of the angular frequency ω of the mechanical excitation, the load resistance R , and the thickness of the film ℓ. The experimental results carried out on piezoelectric polyvinylidene fluoride (PVDF) films validate the model. [ABSTRACT FROM AUTHOR]

In a recent work, assuming a Beer–Lambert optical absorption and a Gaussian laser time profile, it was shown that the exact solutions for a 1D photoacoustic (PA) boundary-value-problem predict a null pressure for optically strong absorbent materials. In order to overcome this inconsistency, a heuristic correction was introduced by assuming that heat flux travels a characteristic length during the duration of the laser pulse [M. Ruiz-Veloz et al., J. Appl. Phys. 130, 025104 (2021)] τ p. In this work, we obtained exact analytical solutions in the frequency domain for a 1D boundary-value-problem for the Dual-Phase-Lag (DPL) heat equation coupled with a 1D PA-boundary-value-problem via the acoustic wave equation. Temperature and pressure solutions were studied by assuming that the sample and its surroundings have a similar characteristic thermal lag response time τ T ; therefore, the whole system is assumed to have a similar thermal relaxation. A second assumption for τ T is that it is considered as a free parameter that can be adjusted to reproduce experimental results. Solutions for temperature and pressure were obtained for a one-layer 1D system. It was found that for τ T < τ p , the DPL temperature has a similar thermal profile of the Fourier heat equation; however, when τ T ≥ τ p , this profile is very different from the Fourier case. Additionally, via a numerical Fourier transform, the wave-like behavior of DPL temperature is explored, and it was found that as τ T increases, thermal wave amplitude is increasingly attenuated. Exact solutions for pressure were compared with experimental PA signals, showing a close resemblance between both data sets, particularly in time domain, for an appropriated value of τ T ; the transference function was also calculated, which allowed us to find the maximum response in frequency for the considered experimental setup. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions and bimerons, characterized by their topological properties and low current-induced motion, are promising magnetic textures for spintronic (skyrmionic) applications. In this work, through atomistic simulations and micromagnetic analysis, we investigate the field-driven manipulation and conversion of skyrmions into bimerons. By applying an in-plane magnetic field, we observe a smooth transition from skyrmions to bimerons, evidencing the persistence of the soliton topology over a wide range of external magnetic fields. Additionally, we obtain a state diagram elucidating the dependence of nucleated topological textures on material parameters and in-plane magnetic field strength. [ABSTRACT FROM AUTHOR]

Ferroelectric thin-film transistors (Fe-TFTs) have promising potential for flexible electronics, memory, and neuromorphic computing applications. Here, we report on a physics-based efficient device model for Fe-TFTs that effectively describes memory switching and device I–V characteristics. This model combines a stochastic multi-domain description of FE switching dynamics with a virtual source treatment of TFT device characteristics. It demonstrates that the memory window of Fe-TFTs depends on the amplitude and duration of the applied voltage pulses, thus suggesting quantitative means of programming and control. Additionally, we introduce a machine-learning-enabled method to automatically generate optimal voltage pulses for accurately programming multiple intermediate FE states, which is crucial for multi-bit memory and neuromorphic computing applications. To showcase the model's applications, we simulate a 4 × 4 crossbar array circuit based on Fe-TFTs, highlighting its utility in performing multiply-accumulate computing operations. This small array can achieve a high speed of ∼ 1.28 tera operations per second (OPS) and a power efficiency of ∼ 0.43 W/PetaOPS. The model developed here is valuable for exploring the capabilities of Fe-TFTs in future flexible memory and computing technologies. [ABSTRACT FROM AUTHOR]

The type-II Dirac fermions are characterized by a tilted Dirac cone and sustain exotic quantum transport phenomena. Here, we show the emergence of a type-II Dirac nodal loop in the SrVO 3 / SrTiO 3 quantum well structure by density functional theory calculations and symmetry arguments. When the spin–orbit coupling (SOC) is neglected, the unavoidable crossing between two t 2 g bands gives rise to a nodal loop in the Brillouin zone, which is protected by the mirror symmetry. Such a nodal loop is fully gapped by including SOC, which results in a large spin Hall effect due to large spin Berry curvatures. Our findings add the unexplored functionality to oxide quantum wells and offer a practical platform to explore the interplay between topological fermions and spin transport phenomena. [ABSTRACT FROM AUTHOR]

We report on a comprehensive study of the electrical and electro-optical properties of 795 nm vertical cavity surface emitting lasers (VCSELs) designed for chip scale Rb atomic clocks. We highlight several key findings including the observation that the current flow at moderate bias levels comprises several parallel paths which are identified by an analysis of the I − V characteristic also confirmed by a numerical simulation. Resistance is a key parameter in any VCSEL. We analyze it in detail at all bias levels and find that above transparency, when the VCSEL enters the high injection regime, the current flow mechanism is modified significantly from an exponential to a power law characteristic. Consequently, resistance attains a nonlinear contribution which is quadratic in the spontaneous emission regime and quasi-linear above the threshold. This nonlinear contribution is not considered in common models. The optoelectronic properties are strongly correlated with the electrical characteristics what allow to explain several peculiarities of the VCSEL performance. We designed and fabricated the VCSELs according to the requirements of miniature Rb atomic clocks, including optimal operation at high temperatures. Their minimum threshold occurs at 363 K where they emit at 794.7 nm. The modal and polarization discrimination in the bias range where these VCSELs operate in practical miniature atomic clocks is well above 30 dB. [ABSTRACT FROM AUTHOR]

The fragmentation of ion clusters within the accelerating fields of ionic liquid ion sources (ILISs) is well documented and degrades ILIS performance and lifetime. Some of the most popular ILIS liquids, such as EMI-BF4 (1-Ethyl-3-methylimidazolium tetrafluoroborate) and EMI-Im (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), emit clusters with lifetimes as low as ∼1 ns. Studies of fragmentation within the accelerating field typically rely on measuring the plume energy distribution averaged over all plume species and comparing those measurements with numerical simulations to estimate ion cluster lifetimes. Here, for the first time, we estimate EMI-BF4 cluster lifetimes by analyzing the energy distributions of individual plume species. We use this novel analysis method to estimate mean lifetimes of positive EMI-BF4 ion clusters from previously published experimental data. We find that the mean lifetime ranges from τ = 3.7 ns to τ = 124 ns for [ EM I + ] [ EMI - B F 4 ] dimers and ranges from τ = 1.5 ns to τ = 23 ns for [ EM I + ] [ EMI - B F 4 ] 2 trimers. Fitting those data to an analytical fragmentation model, we estimate the binding energy and temperature as Δ G S 0 = 0.49 eV and T = 394 K for dimers and Δ G S 0 = 0.40 eV and T = 365 K for trimers. Comparing our results with previous studies supports the conclusion that clusters are emitted with a wide distribution of internal energies, contrary to the common assumption of single internal energy for each species. [ABSTRACT FROM AUTHOR]

Magnetic structure factor (MSF), calculated from ground state configuration previously obtained by Monte Carlo simulation in different rectangular artificial spin ices, is employed to investigate ground state degeneracy. Our analysis considers the importance of nanoislands size to the ratio between rectangle sides in the lattice parameters via a dumbbell model. Pinch points in MSF along with residual entropy, determined for a number of different rectangular lattices with disconnected nanoislands, point out the conditions for the emergency of a gauge field, through which magnetic monopoles interact effectively. [ABSTRACT FROM AUTHOR]

Ultra-thin solar cells display high intrinsic radiation tolerance, making them interesting for space applications. This study investigates the dependence of the open-circuit voltage degradation and overall current–voltage behavior of devices with 80 nm thick GaAs absorber layers, on their absorber layer doping concentration and the radiation type used to introduce damage. The radiation types used were 1 MeV electrons and 20 keV, 100 keV, and 1 MeV protons. It is shown that the open-circuit voltage degradation rate increases with absorber layer doping concentration. This is linked to the increase in trap-assisted tunneling enhancement of the recombination rate, facilitated by the increase in electric field strength in the absorber layer with doping concentration. Trap-assisted tunneling is also found to contribute to the high local ideality factors observed in these devices, exceeding values of 2, and to be responsible for the trend of an increasing ideality factor with doping concentration. The significant role of trap-assisted tunneling in the devices is established through fitting of dark current–voltage data using a custom recombination–generation model. An open-circuit voltage degradation rate and local ideality factor curves are also shown to vary with radiation type, despite accounting for their differences in non-ionizing energy loss. This is corroborated by corresponding trends in carrier lifetime damage constants, extracted from the fitting of the dark current–voltage curves. This suggests that the introduction or behavior of radiation damage differs between ultra-thin and conventional, thicker solar cells, where non-ionizing energy loss theory tends to be reliable, especially over the studied proton energy range. [ABSTRACT FROM AUTHOR]

The Sn-doping effects on the electrical conduction and optical properties of GaAs(631)A epilayers grown by molecular beam epitaxy were investigated. We found that the conduction type conversion, frequently observed in the doping of layers grown on high-index substrates, is avoided when tin-doping is implemented. The maximum free-carrier concentration (n) obtained in GaAs(631):Sn was 2 × 1019 cm−3, an order of magnitude higher than previously reported for GaAs(631):Si, and within the same order of magnitude for the growth of GaAs(100):Si. The electron mobility was suitable for many optoelectronic applications. Raman spectroscopy showed low lattice disorder in (631) oriented samples, compared with singular (100) samples. The photoluminescence characterization of the samples revealed the blueshift of the optical transitions close to E0 associated with the Moss–Burstein effect for Sn doping. Photoreflectance spectroscopy was used to study the doping properties at the critical points E1 and E1 + Δ1, where the major affectation with n was perceived in the broadening parameter Γ. [ABSTRACT FROM AUTHOR]

Different from the extensive experimental investigations into the thermoelectric (TE) properties of the bulk IV–VI compounds, less attention has been paid to the TE properties of the monolayer IV–VI compounds. Here, we consider the TE transport properties including the Seebeck coefficient, electronic conductance, thermal conductance, power factor, and figure of merit Z T of the undoped and Bi-doped GeS monolayers. Our results show that for both the undoped and Bi-doped monolayers the anisotropy is widely observed in all their TE properties, and the maximum Z T at a certain temperature along the armchair direction is much greater than that along the zigzag direction. Moreover, Bi doping can lead to an increase of the maximum Z T , and there are more Z T peaks appearing near the zero chemical potential. This indicates that the Bi-doped GeS monolayer can work as a TE material at a lower bias voltage, and especially along the armchair direction it can work at zero bias voltage, which obviously strengthens the reliability of the TE devices. As the temperature increases, the maximum Z T will be uniformally increased along the armchair and zigzag directions for both the undoped and Bi-doped GeS monolayers. In the temperature scope from 300 to 800 K, the maximum Z T along the armchair direction of the Bi-doped GeS monolayer will increase from 3.39 to 4.85, which indicates that this Bi-doped GeS monolayer is a promising TE material in a wide-temperature zone. As an application, we have designed the GeS-based TE couples and found that their efficiencies can be greater than 27 % at large temperature differences. This research should be an important guidance for designing a low-voltage, wide-temperature-scope, and high-stability TE device. [ABSTRACT FROM AUTHOR]

Laser ablation propulsion and orbit cleaning are developing areas of research. The general aim of laser-based techniques applied to this field is to maximize the momentum transfer produced by a laser shot. This work presents results from ballistic pendulum experiments under vacuum on aluminum, copper, tin, gold, and porous graphite targets. The work has focused on the metrology of the laser experiments to ensure good stability over a wide range of laser parameters (laser intensity ranging from 4 GW/cm 2 to 8.7 TW/cm 2 , pulse duration from 80 ps to 15 ns, and wavelengths of 528 or 1057 nm). The results presented compile data from three experimental campaigns spanning from 2018 to 2021 on two different laser platforms and using different pulse durations, energies, and wavelengths. The study is complemented by the simulation of the momentum from the mono-dimensional Lagrangian code ESTHER. The first part of this work gives a detailed description of the experimental setup used, the ESTHER code, and the treatment of the simulations. The second part focuses on the experimental results. The third part describes the simulation results and provides a comparison with the experimental data. The last part presents possible improvements for future work on the subject. [ABSTRACT FROM AUTHOR]

Zinc germanium diphosphide (ZnGeP2) is a ternary semiconductor best known for its nonlinear optical properties. A primary application is optical parametric oscillators operating in the mid-infrared region. Controlled donor doping provides a method to minimize the acceptor-related absorption bands that limit the output power of these devices. In the present study, a ZnGeP2 crystal is doped with selenium during growth. Selenium substitutes for phosphorus and serves as a deep donor. Significant concentrations of native defects (zinc vacancies, germanium-on-zinc antisites, and phosphorous vacancies) are also present in the crystal. Electron paramagnetic resonance (EPR) is used to establish the atomic-level model for the neutral charge state of the selenium donor. The S = 1/2 signal from the neutral donors is produced at 6 K by illuminating with 633 nm light (electrons excited from doubly ionized Zn vacancies convert Se P + donors to Se P 0 donors). A g matrix, with principal values of 2.088, 2.203, and 1.904, is extracted from the angular dependence of the EPR spectrum. The principal-axis direction associated with the 1.904 principal value is close to a Se–Ge bond. This indicates an asymmetric distribution of unpaired spin density around the selenium ion and thus predicts the deep donor behavior. [ABSTRACT FROM AUTHOR]

Transport in novel materials, specifically those scaled up to wafer sizes, will be dominated by thermionic emission over charged, randomly oriented grain boundaries. However, the challenges presented by random dopant fluctuation in lightly and moderately doped nano-crystalline materials are yet to be addressed. Here, we present a self-consistent model to describe the transport in polycrystalline materials with medium doping levels, where conductivity is governed by thermionic emission over low and wide barriers. We show that random doping fluctuations contribute to a higher material resistivity, which is explained through a non-linear potential drop over the depletion regions on both sides of the boundary. This leads to a decrease in the exponential slope at the onset of conductivity, down to values of ∼ exp ⁡ (− 2.4 kT) − 1 , as well as to asymmetry in the current–voltage characteristics. We demonstrate that the model can be scaled up to several grains and their boundaries, by using commercially available circuit simulators, where non-linearity is realized through look-up tables. We find that an increase in resistivity of up to 18% compared to the nominal, uniformly doped material can be explained simply by the introduction of random dopant fluctuations. [ABSTRACT FROM AUTHOR]

We present a model to calculate the resonant energy absorption of a laser with finite number of pulses impinging on a doped porous dielectric slab. Analytical reflection R and transmission T coefficients are first derived as a function of 0 < α ≤ 1 to account for porosity with α = 1 denotes a perfect ideal slab, which are verified using an electromagnetic solver. Based on the Drude model with resonant line due to impurities, we calculate the resonant energy absorption as a function of doping concentration, quality factor of the resonant line, porosity, length of the slab, and laser pulse length. It is important to note that simulating the combined effects of these parameters is challenging using existing models. The energy absorption efficiency is maximized for a certain degree of doping concentration at a given pulse length and also for a certain pulse length at a given doping concentration. At small doping concentration, the absorption efficiency increases with smaller α (high porosity) and the trend is reversed at larger α (low porosity). Dimensionless parameters are constructed, allowing the calculated results to be applicable over a wide range of frequencies and pulse durations. Thus, this model serves as a useful tool to characterize the amount of energy absorption due to these combined effects, which are important for many applications in plasmonics, optoelectronics, high power microwaves breakdown, and organic materials. Some possible experiments are suggested for future verification of the model. [ABSTRACT FROM AUTHOR]

Magnetically shielded Hall effect thrusters suffer from pole erosion as their life-limiting mechanism. However, the dominant physical mechanism causing this erosion remains unclear, limiting the ability create designs that mitigate erosion and the predictive accuracy of simulations used to aid in design. This paper provides spatially resolved laser Thomson scattering measurements of electron temperature and density in the near field plume of a magnetically shielded Hall effect thruster, traversing the front pole region from the discharge channel centerline to the cathode centerline. The signals are inverted in a Bayesian framework, and the data are compared qualitatively and quantitatively to simulations of the same Hall effect thruster. Based on the electron momentum equation, electron pressure gradient is used as a proxy for the electron-predicted electrostatic potential gradient. To within the accuracy of this approximation, the electron pressure has a minimum immediately in front of the front pole. Hence, ions have an electrostatic potential avenue from the discharge region to the front pole, validating this mechanism of pole erosion. [ABSTRACT FROM AUTHOR]

We present a simple implicit solution for the time-dependent trajectory of a thin Asay foil ejecta diagnostic for the general case where the impinging ejecta cloud is generated by a source function characterized by an arbitrary (sustained) time dependence and a time-independent (stationary) particle velocity distribution. In the limit that the source function time dependence becomes a delta function, this solution—which is amenable to rapid numerical calculations of arbitrary accuracy—exactly recovers a previously published solution for the special case of instantaneous ejecta production. We also derive simple expressions for the free-surface arrival (catch-up) time as well as the true ejecta areal mass accumulation on the accelerating foil and place bounds on the level of error incurred when applying instant-production mass solutions to a sustained-production trajectory. We demonstrate these solutions with example calculations for hypothetical source functions spanning a wide range of ejecta production durations, velocity distributions, and temporal behaviors. These calculations demonstrate how the foil trajectory is often insensitive to the temporal dependence of the source function, instead being dominated by the velocity distribution. We quantify this insensitivity using a "compatibility score" metric. Under certain conditions, one may capitalize upon this insensitivity to obtain a good approximation of the second integral of the velocity distribution from the observed foil trajectory. [ABSTRACT FROM AUTHOR]

Noninvasive measurements of electron properties in a Hall effect thruster (HET) are needed to understand the physical processes in the acceleration region and to validate simulations. This paper presents spatially resolved laser Thomson scattering (LTS) measurements across the entire acceleration region of a HET. The test article is the H9, a 9 kW class magnetically shielded HET. The H9 is operated on krypton at a facility pressure of 1.2 × 10−5 Torr Kr (1.6 mPa). The thruster is operated at three discharge conditions: 171 V, 35 A, an inner coil current (Iic) of 4.11 A, and an outer coil current (Ioc) of 2.27 A as the baseline 6 kW condition; 154 V, 34.8 A, an Iic of 4.11 A, and an Ioc of 2.27 A to vary the discharge voltage; and 171 V, 34.4 A, an Iic of 4.52 A, and an Ioc of 2.5 A to vary the magnetic field strength. At each discharge condition, we measured axial profiles of electron density and electron temperature along the channel centerline from 5% to 95% of a channel length downstream of the channel exit plane. At the baseline condition, we also measure the axial profile of the azimuthal electron drift velocity. We measure a minimum electron density of 1.3 × 1017 m−3, peak electron temperatures around 40 eV, and a peak azimuthal electron drift velocity around 680 km/s. The results suggest the presence of anomalous electron heating and demonstrate that low discharge voltages allow LTS to access the entire acceleration region of a HET. [ABSTRACT FROM AUTHOR]

Laser annealing was employed to trigger the solid-state reaction of a thin Co film (2.5 nm) with undoped Si. A metastable disilicide layer was obtained after one laser pulse close to the melt threshold. Its diffraction pattern, relaxed lattice parameter, and residual resisitivity are consistent with the formation of the defective CsCl structure. The CoSi2 phase was found after prolonging the thermal treatment with additional pulses or rapid thermal annealing. Because CoSi is skipped in the phase sequence, CoSi2 layers are more uniform in thickness, have an increased superconductivity and a reduced formation temperature. This approach is compatible with the SALICIDE process and can be used to form smooth contacts in superconducting or regular transistors. [ABSTRACT FROM AUTHOR]

The motion of ions in supercapacitor electrodes produces internal stresses that cause viscoelastic strains. In addition, stresses may be due to external forces applied to structural supercapacitors, which are multifunctional materials that simultaneously store energy and carry structural loads. There are currently no thermodynamics-based models for the coupled electro-chemo-viscoelastic response of electrodes. Here, the same thermodynamics model is used for both the viscoelastic response and the electrochemical response. This mathematical equivalence is a reference from which to study coupling between the viscoelastic and electrochemical responses. The model has two inputs (stress or strain and electric potential or specific charge) and two outputs (strain or stress and specific charge or electric potential). The coupling is studied by adding three constants in the free energy. The convexity of the free energy and the stability of the free response limit the magnitude of the coupling. The unit response matrix is derived, and results are given for the time and frequency domains. The effect of an applied potential on stress is shown to be much more significant than the converse effect. The model compares well to an experiment consisting of a cyclic electric current applied during stress relaxation. [ABSTRACT FROM AUTHOR]

Shock invariant relationship, which was conceived for inert shock waves to derive the 4th power relationship between shock pressure and maximum strain rate, is generalized for reactive shock waves such as Chapman–Jouget detonation and shock-induced vaporization. The generalization, based on the first-order reaction models, is a power function relationship between overall dissipated energy (Δ e d i s ) and reaction time Δ τ such that Δ e d i s Δ τ 1 / α = constant , where the power coefficient α is found to be in the range of 2/3–4. Experimental data, though scarce, are consistent with the generalization. Implication of the generalization for inert shocks is also considered and suggests a broad range of the 4th power coefficient including an inequality equation that constrains the shock and particle velocity relationship. [ABSTRACT FROM AUTHOR]

The generation of above-bandgap photovoltage, referred to as the anomalous photovoltaic effect (APV), is an extraordinary characteristic sought after property in bulk ferroelectric photovoltaic devices. Despite the fact that the relatively narrow bandgap of BiFeO3 (BFO) (2.7 eV) induces a comparatively larger generation of photocurrent than other ferroelectric photovoltaic, it falls short in producing an anomalous photovoltage (Eg ≪ Voc) and exhibits leaky ferroelectric hysteresis due to unavoidable oxygen vacancies. This work revealed a reduction in oxygen vacancies through the substitution of Ba(Fe1/2Nb1/2)O3 in BFO, leading to improved structural, morphological, synchrotron XPS, and electrical properties. This reduction in oxygen vacancies has resulted in an impressive above-bandgap photovoltage (APV) of 4.41 V for 80BFO–20BFN with greater ferroelectric polarization (Pr = 20.45 μC/cm2) observed at the co-existence of polar and non-polar phases. Moreover, both theoretical and experimental optical analyses have demonstrated a significant decrease in the bandgap to 1.92 eV, effectively extending the visible region close to 653 nm. As a result, a larger population of photoexcited charge carriers is generated, enabling the attainment of a high current density (Jsc) of 0.75 μA/cm2 under 100 mW/cm2 light irradiation. [ABSTRACT FROM AUTHOR]

This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency cavities used in particle accelerators while preserving high quality factors in the 1010 range. The unique ALD capability to control the film thickness down to the atomic level on arbitrary complex shape objects enables the fine-tuning of TiN film resistivity and total electron emission yield (TEEY) from coupons to devices. This level of control allows us to adequately choose a TiN film thickness that provides both high resistivity to prevent Ohmic losses and a low TEEY to mitigate multipacting for the application of interest. The methodology presented in this work can be scaled to other domains and devices subject to RF fields in vacuum and sensitive to multipacting or electron discharge processes with their own requirements in resistivities and TEEY values. [ABSTRACT FROM AUTHOR]

Indium oxide and doped indium oxide films were successfully grown utilizing a plasma-enhanced atomic layer deposition supercycling process, which was found to be an effective means of controlling films' composition and, hence, their properties. Using trimethylindium and oxygen plasma as an indium precursor and a co-reactant, respectively, a growth rate of approximately 1.26 Å per cycle was obtained based on thickness measurements by spectroscopic ellipsometry. Three distinct dopants, Sn, Ti, and Mo, have been incorporated into indium oxide. The effects of dopant type, cycle ratio of dopant to indium oxide, and thermal annealing on the structural, electrical, and optical properties were studied. The deposited films consisted of polycrystalline columnar grains perpendicular to the substrate with a cubic bixbyite structure and [111] as the favored growth direction. Thermal annealing had a significant effect on the film characteristics, resulting in an order of magnitude reduction in resistivity, as well as changes in transmittance in the near-infrared (NIR) and ultraviolet (UV) regions. The lowest resistivities achieved for Sn-doped, Ti-doped, and Mo-doped were 2.8 × 10−4, 4.2 × 10−4, and 6.1 × 10−4 Ω cm, respectively. The changes are attributed to dopant activation, as the UV shift between the differently doped samples may be linked to the Moss–Burstein effect and the NIR behavior can be explained by an increase in charge carrier density, as predicted by the Drude model. The three dopants primarily provide a trade-off between electrical resistance and NIR transparency. Mo-doped films exhibited the highest near-infrared transparency, while Sn-doped films offered the lowest sheet resistance. [ABSTRACT FROM AUTHOR]

Motivated by the multiferroic effects and quantum magnetization plateaus in the skew chain antiferromagnets T 2 V 2 O 7 (T = Ni, Co), we have conducted a detailed density function theoretical study on Co 2 V 2 O 7. The results show that the nearest-neighbor interchain interaction (J 3 / k B = − 35.57 K) is not much greater than the intrachain interactions (J 1 / k B = − 19.54 K and J 2 / k B = 27.55 K), showing the absence of interchain dimerization of the Co ions. This indicates that the "dimer+monomer" model used for Ni 2 V 2 O 7 [Cao et al., Phys. Rev. B 106, 184409 (2022)] is no longer applicable to Co 2 V 2 O 7. Finally, the exact diagonalization of spin Hamiltonian, including anisotropic exchanges, produces the experimentally observed 1/2 and 3/4 magnetization plateaus. [ABSTRACT FROM AUTHOR]

It is crucial to better understand the magnetization reversal process between soft and hard magnets and to achieve a high maximum energy product in thick composite multilayers. In this study, we find that the exchange interactions dominate in soft–hard-magnetic composite bilayers, while dipole interactions are predominant in soft–hard-magnetic composite trilayers. Based on the first-order reversal curve, magnetization reversal models are developed for both the thick composite bilayer and trilayer. Dipole interactions play an important role in the long range, resulting in higher coercivity and remanence in the thick trilayer. A multilayer in a stacked trilayer structure is achieved, which is composed of thick films with a perpendicular magnetic anisotropy at a thickness of up to 16 μm. The enhanced dipole interactions lead to a remanent polarization of 1 T and a maximum energy product of 22.5 MGOe. This work contributes to the preparation of thick films with a high maximum energy product for applications in magnetic microelectromechanical systems. [ABSTRACT FROM AUTHOR]

In the pursuit of reliable energy storage solutions, the significance of engineering electrodes cannot be overstated. Previous research has explored the use of surface modifiers (SMs), such as single-side fluorinated graphene, to enhance the thermodynamic stability of ion intercalation when applied atop few-layer graphene (FLG). As we seek alternatives to lithium-ion batteries (LIBs), earth-abundant elements like sodium and potassium have emerged as promising candidates. However, a comprehensive investigation into staging intercalation has been lacking thus far. By delving into staging assemblies, we have uncovered a previously unknown intercalation site that offers the most energetically favorable binding. Here, we study the first three elements in both alkali (Li, Na, K) and alkaline (Be, Mg, Ca) earth metals. Furthermore, the precise mechanism underlying this intercalation system has remained elusive in prior studies. In our work, we employed density functional theory calculations with advanced hybrid functionals to determine the electrical properties at various stages of intercalation. This approach has been proven to yield more accurate and reliable electrical information. Through the analysis of projecting density of states and Mulliken population, we have gained valuable insights into the intricate interactions among the SM, ions, and FLG as the ions progressively insert into the structures. Notably, we expanded our investigation beyond lithium and explored the effectiveness of the SM on ions with varying radii and valence, encompassing six alkali and alkaline earth metals. Additionally, we discovered that the number of graphene layers significantly influences the binding energy. Our findings present groundbreaking concepts for material design, offering diverse and economically viable alternatives to LIBs. Furthermore, they serve as a valuable reference for fine-tuning electrical properties through staging intercalation and the application of SMs. [ABSTRACT FROM AUTHOR]

It is known that field emission from random nano-structured surfaces cannot be well characterized with the original field emission model known as the Fowler–Nordheim (FN) law or the Murphy–Good (MG) law. To account for the roughness effects, the traditional approach was to introduce the arbitrary field enhancement factor β in the FN and MG laws. In this paper, by treating the random roughness of field emitters as a fractional dimension object with 0 < α < 1 , fractional models of the FN and MG law, which were formulated recently may serve as alternate characterization tools. At α = 1 , the models will recover the traditional FN and MG laws valid for a perfect flat planar surface. These generalized fractional FN law ( FN α) and the fractional MG law ( MG α) will be used to characterize various field emission experiments by finding the best 0 < α < 1 values to account for the degree of the random roughness. The findings will be compared among the traditional and fractional emission models, where the best-fitting results will be shown for each case. It is found that the fractional field emission models provide more physical and appropriate field emission parameters, i.e., field enhancement factor and field emission area, in comparison with traditional field emission models. [ABSTRACT FROM AUTHOR]

For many years, Si1−yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective bandgap and strain engineering and can improve the carrier mobilities, which makes Si1−x−yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1−x−yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical–mechanical polishing, giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1−x−yGeySnx alloys by Sn ion beam implantation into Si1−yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro-Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1−yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1−x−yGeySnx with up to 2.3 at. % incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1−yGey films by masking unstructured regions on the chip, thus demonstrating the realization of vertical as well as lateral Si1−x−yGeySnx heterostructures by Sn ion implantation and flash lamp annealing. [ABSTRACT FROM AUTHOR]

Muons are part of natural cosmic radiation but can also be generated at spallation sources for material science and particle physics applications. Recently, pulsed muons have been used to characterize the density of free charge carriers in semiconductors and their recombination lifetime. Muon beam irradiation can also result in the formation of dilute levels of crystal defects in silicon. These crystal defects are only detected in high carrier lifetime silicon samples that are highly sensitive to defects due to their long recombination lifetimes. This work investigates the characteristics of these defects in terms of their formation, recombination activity, and deactivation. Charge carrier lifetime assessments and photoluminescence imaging have great sensitivity to measure the generated defects in high-quality silicon samples exposed to ∼4 MeV (anti)muons and their recombination activity despite the extremely low concentration. The defects reduce the effective charge carrier lifetime of both p- and n-type silicon and appear to be more detrimental to n-type silicon. Defects are created by transmission of muons through the wafer, and there are indications that slowed or implanted muons may create additional defects. In a post-exposure isochronal annealing study, we observe that annealing at temperatures of up to 450 °C does not by itself fully deactivate the defects. A recovery of charge carrier lifetime was observed when the annealing was combined with Al2O3 surface passivation, probably due to passivation of bulk defects from hydrogen from the dielectric film. [ABSTRACT FROM AUTHOR]

Ultra-high temperature ceramics (UHTCs), most notably transition metal carbides and borides, exhibit melting temperatures exceeding 3000 °C, making them appropriate candidates to withstand the extreme temperatures (∼2000 °C) expected to occur at the leading edges of hypersonic vehicles. However, their propensity to react rapidly with oxygen limits their sustained application. The high entropy paradigm enables the exploration of novel UHTC compositions that may improve on the oxidation resistance of conventional refractory mono-carbides and -diborides. The oxidation kinetics of candidate high entropy group IV + V (HfZrTiTaNb)C and (HfZrTiTaNb)B2 materials were evaluated at 1500–1800 °C using Joule heating in one atmosphere 0.1%–1% oxygen/argon gas mixtures for times up to 15 min. Possible mechanisms based on the resulting complex time, temperature, and oxygen partial pressure dependencies are discussed. The carbides formed porous and intergranular oxides. Oxidation resistance was improved upon a continuous external scale formation. The diborides formed dense external scales and exhibited better oxidation resistance compared to the carbides. This improvement was attributed to the formation of liquid boria. Both compositions showed an unexpected reduction in material consumption at 1800 °C for all times tested, compared to results at lower temperatures. An in-depth analysis of the composition and morphology of the oxide scale and sub-surface regions for specimens tested at 1800 °C revealed that the formation of denser group IV-rich (Hf, Zr, Ti) oxides mitigated the formation of the otherwise detrimental liquid-forming group V (Ta, Nb) oxides, leading to the improved oxidation resistance. [ABSTRACT FROM AUTHOR]

Granular metals (GMs), consisting of metal nanoparticles separated by an insulating matrix, frequently serve as a platform for fundamental electron transport studies. However, few technologically mature devices incorporating GMs have been realized, in large part because intrinsic defects (e.g., electron trapping sites and metal/insulator interfacial defects) frequently impede electron transport, particularly in GMs that do not contain noble metals. Here, we demonstrate that such defects can be minimized in molybdenum–silicon nitride (Mo–SiNx) GMs via optimization of the sputter deposition atmosphere. For Mo–SiNx GMs deposited in a mixed Ar/N2 environment, x-ray photoemission spectroscopy shows a 40%–60% reduction of interfacial Mo-silicide defects compared to Mo–SiNx GMs sputtered in a pure Ar environment. Electron transport measurements confirm the reduced defect density; the dc conductivity improved (decreased) by 104–105 and the activation energy for variable-range hopping increased 10×. Since GMs are disordered materials, the GM nanostructure should, theoretically, support a universal power law (UPL) response; in practice, that response is generally overwhelmed by resistive (defective) transport. Here, the defect-minimized Mo–SiNx GMs display a superlinear UPL response, which we quantify as the ratio of the conductivity at 1 MHz to that at dc, Δ σ ω. Remarkably, these GMs display a Δ σ ω up to 107, a three-orders-of-magnitude improved response than previously reported for GMs. By enabling high-performance electric transport with a non-noble metal GM, this work represents an important step toward both new fundamental UPL research and scalable, mature GM device applications. [ABSTRACT FROM AUTHOR]

Surface pattern formation of Smart Cut™ silicon-on-insulator (SOI) substrates is investigated using a new process derived from this technology. The local control of SOI surface roughness is achieved by using hetero-temperature surface activated bonding to introduce locally bespoke shear stresses into bonded silicon wafers. The finite element method is used to back up experimental measurements of these large deformations to determine the amount of shear stresses introduced into the structure, and to determine its impact on the fracture mechanism. [ABSTRACT FROM AUTHOR]

The mixed zinc-ferrite spinel magnetic nanoparticles (MNPs) with the general formula ZnxFe3−xO4 are among the most extensively studied families of Fe oxides due to their interesting and diverse chemical, electronic, and magnetic properties. These systems offer the possibility of surface functionalization and possess high biocompatibility, making them highly attractive for applications in biomedicine, such as magnetic fluid hyperthermia (MFH). The efficiency of the MFH process relies on the magnetic, structural and morphological properties of the MNPs. The substitution with the Zn ion and the cationic distribution, as well as the synthesis process employed, have a direct impact on the final properties of these oxides. Therefore, it is essential to have tools that enable a comprehensive characterization of the system to assess its performance in MFH. In this study, we have synthesized four ZnxFe3−xO4 MNP systems using three different methods: two by thermal decomposition at high temperatures, one by co-precipitation, and another by co-precipitation followed by ball milling. We analyze the effect of these various synthesis processes on the magnetic and crystallographic properties, aiming to correlate them with the response of each system in MFH. Neutron diffraction data are employed to determine the cation site occupation and to investigate the correlation with the synthesis method. MFH measurements were conducted in media of diverse viscosities, revealing different values of specific loss power, thus demonstrating a clear dependence on the synthesis process and Zn content. [ABSTRACT FROM AUTHOR]

Geometry plays an important role in the nucleation, stabilization, and manipulation of magnetization patterns within magnetic nanoelements. This work analyzes the impact of curvature on the thermal stability of skyrmions hosted on Gaussian-shaped nanoshells. Based on annihilation processes observed in flat nanoparticles, three distinct annihilation processes—skyrmion contraction, expansion, and displacement toward the nanodot border—are analyzed. We show that curvature-induced effective interactions significantly alter the energy barriers associated with these annihilation processes. The changes in energy are related to the relative alignment between the skyrmion core and the direction normal to the surface, highlighting the presence of favorable and unfavorable chiralities for skyrmion stabilization in curved nanodots. We also show that, unlike the one obtained for flat nanodots, where the skyrmion lifetimes typically span seconds, the lowest energy barrier values in curved nanodots reach values that ensure skyrmion lifetimes at room temperature to months before thermal fluctuations annihilate them. Curvature parameters can control the annihilation mechanism. This enhancement in skyrmion stability holds even without external additional stimuli. This underscores the profound impact of curvature on the dynamic behavior and thermal stability of skyrmions within magnetic nanoelements. [ABSTRACT FROM AUTHOR]