19 results on '"Shin, C. S."'
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2. Raman scattering from TiNx (0.67 ≤ x ≤ 1.00) single crystals grown on MgO(001).
3. Raman scattering from epitaxial TaNx (0.94≤x≤1.37) layers grown on MgO(001).
4. Growth of CoSi2 on Si(001) by reactive deposition epitaxy.
5. Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiN[sub x] (0.67<=x<1.0) layers on MgO(001).
6. Growth and physical properties of epitaxial CeN layers on MgO(001).
7. Vacancy hardening in single-crystal TiN[sub x](001) layers.
8. Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions.
9. Band gap in epitaxial NaCl-structure CrN(001) layers.
10. Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties.
11. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer.
12. Structural and optical properties in ZnTe/GaAs strained heterostructures grown by temperature-gradient vapor transport deposition.
13. Raman scattering from TiNx(0.67 ≤ x ≤ 1.00) single crystals grown on MgO(001)
14. Raman scattering from epitaxial TaNx(0.94≤x≤1.37) layers grown on MgO(001)
15. Growth of CoSi2 on Si(001) by reactive deposition epitaxy
16. Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67⩽x<1.0) layers on MgO(001)
17. Vacancy hardening in single-crystal TiNx(001) layers
18. Epitaxial NaCl structure δ-TaNx(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio
19. Epitaxial NaCl structure δ-TaN[sub x](001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio.
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