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The study focuses on the principles and applications of the magnetization-step method to relatively small clusters, no more than a dozen spins or so. The results for the distant neighbors exchange constants J(sub i) in Mn-based II-VI dilute magnetic semiconductors disagree with all the previous theoretical predictions.

Various spectroscopic techniques enable the characterization of the growth of In oxide layers on Si(III) through evaporation of In at room temperature and high temperatures. Increase in oxygen, pressure and temperature during evaporation produces In oxide layers of In2O3 stoichiometry. At room temperature and for P(sub oxygen) less than 5 times 10 to the power of -5 mbar. Si-In oxide interface contains metallic In and oxidized Si.

The distant-neighbor exchange constants, Ji, in Zn(sub 1-x)Mn(sub x)X (X = S, Se, Te) are analyzed. The constants were obtained from magnetization steps at 20 mK. It is shown that the ratios between the four largest constants in Zn(sub 1-x)Mn(sub x)S significantly disagree with other sets of ratios. The results for Zn(sub 1-x)Mn(sub x)Se and Zn(sub 1-x)Mn(sub x)Te also show that the ratios between exchange constants are material dependent.

Exchange interaction between d levels in the diluted magnetic semiconductor ZnFeS was investigated. The results showed that the magnetic susceptibility of the material exhibited typical Curie-Weiss behavior at temperatures above 100 K. The exchange interaction constant between the nearest neighbors was estimated to be 37 K, the largest value obtained experimentally for Fe-based diluted magnetic semiconductors.

The magnetic characteristics of the diluted magnetic semiconductor Zn1-xCrxSe were investigated. The results showed that the specific heat underwent an exponential increase as the temperature became higher. A Schottky-type anomaly which featured an energy gap of the order 6-7 cm(super -1) was observed. The increase in specific heat was attributed to magnetic-field splitting of the lowest doublet.

Reviews the phase diagrams of three-dimensional low-anisotropy easy-axis antiferromagnets. Analysis of the mean-field theory of antiferromagnets; Experiments made on phase diagrams; Effects of random fields on the behaviors near the Néel and bicritical points.

Presents information on a study which analyzed the magnetization steps of a dilute magnetic semiconductor (DMS). Components of DMS; Theory of magnetization steps; Conclusions.

Presents a study that examined the properties of indium oxide/n-gallium arsenide semiconductor junctions. Analysis of the electrical and structural properties of the samples; Determination of the chemical composition of the samples; Effect of oxygen pressure on oxide stoichiometry and the indium oxidation state.

Presents information on a study which observed the magnetoresistance in cadmium[sub1] manganese selenium near the Mott transition. Methodology; Results; Discussion.