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The effect of interfacial reactions at the poly Si[sub 1-x]Ge[sub x]/HfO[sub 2] interface on the electrical properties of metal–oxide–semiconductor (MOS) capacitors with a poly Si[sub 1-x]Ge[sub x] (x=0,0.6)/HfO[sub 2] gate stack was investigated relative to the deposition conditions for the poly Si[sub 1-x]Ge[sub x] films, the Ge content of the poly Si[sub 1-x]Ge[sub x] films, and the annealing temperatures, by the electrical measurements and x-ray photoelectron spectroscopy. With an increase in hydrogen induced from doping or from deposition gas used during the deposition of poly Si[sub 1-x]Ge[sub x] (x=0,0.6) films, the accumulation capacitance of the MOS capacitors with a poly Si[sub 1-x]Ge[sub x]/HfO[sub 2] gate stack became anomalous and the leakage current increased significantly, due to the formation of hydroxyl(OH–) ions or the partial reduction of HfO[sub 2] at the grain boundary. With an increase in Ge content of the poly Si[sub 1-x]Ge[sub x] films, silicate formation became dominant at the poly Si[sub 1-x]Ge[sub x]/HfO[sub 2] interface, resulting in a significant decrease in leakage current. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The electrical measurements and x-ray photoelectron spectroscopy are used to investigate the effect of interfacial reactions at the poly Si(sub 1-x)Ge(sub x)/HfO2 interface on the electrical properties of metal-oxide-semiconductor (MOS) capacitors with a poly Si(sub 1-x)Ge(sub x) (x=0,0.6)/HfO2 gate stack. Silicate formation becomes dominant at the poly Si(sub 1-x)Ge(sub x)/HfO2 interface, resulting in a significant decrease in leakage current, in the poly Si(sub 1-x)Ge'(sub x)/HfO2 system.