1. Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance
- Author
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A. A. Allerman, Albert G. Baca, Daniel D. Koleske, R. D. Briggs, and Steven R. Kurtz
- Subjects
Range (particle radiation) ,Electron density ,Field (physics) ,Condensed matter physics ,business.industry ,Chemistry ,General Physics and Astronomy ,Heterojunction ,Polarization (waves) ,Condensed Matter::Materials Science ,Electric field ,Optoelectronics ,business ,Fermi gas ,Line (formation) - Abstract
A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field, spectral features associated with the AlGaN barrier, the two-dimensional electron gas at the interface, and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN Franz–Keldysh oscillations. For a high mobility heterostructure grown on SiC, measured AlGaN polarization electric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad, field-tunable first derivative electroreflectance feature. With a dielectric function calculation, we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.
- Published
- 2004
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