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Your search keyword '"Miyagawa, S"' showing total 12 results
Start Over Author "Miyagawa, S" Journal journal of applied physics
12 results on '"Miyagawa, S"'

1. Formation of beta-Si3N4 by nitrogen implantation into SiC

Author

Miyagawa, S., Nakao, S., Saitoh, K., Ikeyama, M., Niwa, H., Tanemura, S., and Miyagawa, Y.

Subjects
Polycrystalline semiconductors -- Research, Nitrogen -- Thermal properties, Nuclear reactions -- Research, Silicon carbide -- Research, Silicon nitride -- Research, Physics
Published
1995

3. Growth of epitaxial TiN films on MgO(100) by high current discharge plasma

Author

Miyagawa, S., Saitoh, K., Niwa, H., Ikeyama, M., Massouras, G., and Miyagawa, Y.

Subjects
Thin films -- Research, High temperature plasmas -- Research, Physics
Abstract

The use of a high currentdischarge plasma for the fabrication of epitaxial TiN thin films on MgO (100) substrates was evaluated using Rutherford backscattering spectrometry. The results showed that particles intruding on the MgO substrate could be ionized with efficiencies as high as 70%. The minimum channeling yields for (100) and (110) oriented axes at a temperature of 55 degrees celsius and a growth rate of40 angstroms per second were 1.4% and 2.0%.

Published
1992

4. Formation of β-Si3N4 by nitrogen implantation into SiC.

Author

Miyagawa, S., Nakao, S., Saitoh, K., Ikeyama, M., Niwa, H., Tanemura, S., Miyagawa, Y., and Baba, K.

Subjects
*NITROGEN, *NUCLEAR reactions, *BACKSCATTERING, *SPECTRUM analysis
Abstract

Presents a study which measured the depth of nitrogen implanted in SiC at high temperature and high fluence using the nuclear reaction analysis, Rutherford backscattering spectroscopy and Auger electron spectroscopy to analyze the formation process of composite SiC and Si[sub3]N[sub4] on the SiC surface. Experimental procedures; Results and discussion.

Published
1995
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