1. Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers
- Author
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Yasuhiko Nakayama, Hisao Tanoue, Naotaka Otogawa, Masato Osamura, Yasuhito Suzuki, Teruhisa Ootsuka, Takahiro Mise, Zhengxin Liu, Ryo Kuroda, Yunosuke Makita, Shinan Wang, and Yasuhiro Fukuzawa
- Subjects
Materials science ,Fabrication ,Silicon ,Annealing (metallurgy) ,General Physics and Astronomy ,chemistry.chemical_element ,Sputter deposition ,Epitaxy ,Buffer (optical fiber) ,Crystallography ,Chemical engineering ,chemistry ,Sputtering ,Short duration - Abstract
We fabricated continuous highly (110)/(101)-oriented β-FeSi2 films on Si (111) substrates by the facing-target sputtering method. An epitaxial thin β-FeSi2 template buffer layer preformed on the silicon substrate was found to be essential in the epitaxial growth of thick β-FeSi2 films. It was proved that the template reduced the iron diffusion into the silicon substrate during thick β-FeSi2 film fabrication. Even though the annealing was performed at high temperature (880 °C) for a long duration (10 h), iron diffusion was effectively hindered by the template. By introducing this template buffer layer, an abrupt interface without appreciable defects between the β-FeSi2 film and the silicon substrate formed. The mechanism for the reduction of iron diffusion by the template buffer layer is discussed.
- Published
- 2004
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