1. Size-dependent persistent photocurrent and its origin in dc sputtered indium oxide films under UV and sub-band gap illuminations
- Author
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M. Balasubrahmaniyam, Prabal Sen, S. Kasiviswanathan, and Durgesh Kar
- Subjects
010302 applied physics ,Photocurrent ,Materials science ,Passivation ,Band gap ,Carrier scattering ,Time constant ,Analytical chemistry ,Oxide ,General Physics and Astronomy ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,0210 nano-technology ,Order of magnitude ,Indium - Abstract
The size and spectral dependence of the persistent photocurrent (PPC) of dc sputtered indium oxide (IO) films has been studied under UV and sub-band gap illuminations. PPC follows bi-exponential decay with a fast and a slow process having time constants (denoted by τ f and τ s, respectively) that differ by about two orders of magnitude. τ s is associated with carrier scattering from an initial surface state to a surface or bulk state with the former dominating below a characteristic length scale of ∼60 nm. On the other hand, τ f is characterized by the process where both the initial and final states are surface related. Treating the IO film surface with tetramethyl tetraphenyl trisiloxane (TTTS) decreases τ s by a factor of 5 with τ f remaining almost unaffected, which is a clear indication of reduction of defects specific to the slow relaxation process. Based on the molecular structure and chemical activity of TTTS, it is suggested that TTTS may passivate mainly the dangling oxygen-bonds at the film surf...
- Published
- 2017
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