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We employed Fourier transform variable angle infrared spectroscopic ellipsometry (IRSE) in wavelength range of 2–30 μm to investigate a group of silicon wafers, which are implanted with high doses and annealed in high temperature. The IRSE spectra for samples with different implantation doses were analyzed physically. When the semiconductor is heavily doped, it becomes degenerated and the doped impurities cannot ionize completely. For the analysis of the IRSE data, we quantitated the ionization probability as a function of impurity concentration in the optical model to describe the carrier concentration profile, by which the impurity concentration and carrier concentration profiles can be determined simultaneously. [ABSTRACT FROM AUTHOR]

The photocarrier radiometry (PCR) responses of heavily implanted silicon wafers (As+ ion 1×1013–1×1016 cm-2) were reported. The experimental dependence of the PCR amplitude on the implant dose was in good agreement with the theoretical prediction calculated with a three-layer PCR model, in which the implanted silicon wafer was assumed to be consisted of an amorphous, a polycrystalline, and a single-crystalline Si layer. The structural, optical, and transport properties of all layers used in the calculations were determined experimentally with spectroscopic ellipsometry (SE), spectrophotometry, and laterally resolved modulated free-carrier absorption to minimize the uncertainties of the theoretical calculations. The dose dependence of the PCR amplitude showed a nonmonotonicity at high dose implantation, as confirmed by the SE measurements. [ABSTRACT FROM AUTHOR]

Computer simulations are carried out to investigate the sensitivity of simultaneous determination of three electronic transport properties (carrier lifetime, carrier diffusivity, and front surface recombination velocity) of silicon wafers by modulated free carrier absorption (MFCA) via a multiparameter fitting procedure. The relative accuracy of the transport parameter determination by laterally resolved MFCA (LR-MFCA), in which the amplitude and phase are measured as functions of the pump-probe-beam separation at several modulation frequencies covering an appropriate range, and by conventional frequency-scan MFCA (FS-MFCA), in which only the modulation frequency dependences of the amplitude and phase are recorded, is theoretically analyzed and experimentally estimated by calculating the dependence of the mean square variance on individual transport parameter via a multiparameter estimation process. Simulated and experimental results show that the determination of the transport properties of silicon wafers by LR-MFCA are more accurate, compared with that by FS-MFCA. Comparative experiments are performed with a silicon wafer and the estimated uncertainties of the carrier diffusivity; lifetime and front surface recombination velocity are approximately ±3.7%, ±25%, and ±35% for LR-MFCA and ±7.5%, ±31%, and ±24% for FS-MFCA, respectively. [ABSTRACT FROM AUTHOR]

Presents a study which investigated Raman spectra of nanometer-sized particles of tin oxide at room temperature. Sample preparation; Division of the Raman spectrum peaks of nanometer tin oxide; Conclusions.

Focuses on a study which explored an x-ray photoelectron spectroscopic analysis of the interaction between polyimide film made by the Langmuir-Blodgett method and silicon. Background on silicon carbide; Description of the experimental setup; Results and discussion.