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A new study reports on the kinetics of the growth and nucleation of hydrogen induced platelets in H-implanted SiC.

Interface defects formed during the wafer bonding process upon annealing have been studied. Based on the hydrogen diffusion in SiO2 and the stability of the bubbles at the bonding interface, models of the growth and further dissolution of the defects are presented. Considering the hydrogen diffusion through the interfacial oxide, diffusion coefficients and activation energy (Ea=0.25 eV) are obtained. It has been shown that the defect dissolution is driven by the exodiffusion of the hydrogen toward the silicon substrates. [ABSTRACT FROM AUTHOR]

We have performed systematic measurements of the splitting kinetics induced by H-only and He+H sequential ion implantation into relaxed Si0.8Ge0.2 layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si0.8Ge0.2. Sequential ion implantation leads to faster splitting kinetics than H-only in both materials and is faster in Si0.8Ge0.2 than in Si. We have performed secondary ion mass spectrometry, Rutherford backscattering spectroscopy in channeling mode, and transmission electron microscopy analyses to elucidate the physical mechanisms involved in these splitting phenomena. The data are discussed in the framework of a simple phenomenological model in which vacancies play an important role. [ABSTRACT FROM AUTHOR]

We study the implant-induced hydrogenated defects responsible for the Smart Cut™ layer transfer of Si (001) films. Different experimental methods are used to quantify the time dependence of the defect evolution and interactions during isothermal annealings. An optical characterization technique was developed for the statistical analysis of the formation and growth of micrometer size microcracks in the buried implanted layer. We show that the formation of molecular hydrogen is dominated by a transient phenomenon related to the rapid dissociation of the hydrogenated point defects. The impact of the H2 formation kinetics on the microcrack evolution is described and the physical mechanisms involved in their growth are identified. A comprehensive picture of the fracture phenomenon in H implanted Si leading to the full layer transfer is proposed and discussed. [ABSTRACT FROM AUTHOR]

The effect of hydrogen implantation on the transport of impurities in silicon is studied. We use secondary ion mass spectrometry measurements to investigate the depth redistribution of oxygen, carbon, and fluorine during low temperature, ≤450 °C, isothermal anneals. Their fast migration toward the projected range region of H implants points to the existence of a strong interaction of the impurities with H-induced defects. Significantly enhanced, as compared to the literature values, diffusivities of the investigated impurities were obtained. The results reveal that hydrogen implantation can be advantageously used for the impurity profile engineering and gettering studies in silicon in the low temperatures annealing regime. [ABSTRACT FROM AUTHOR]

In this paper we study the effect of the order and dose of H and He sequential implantation on H interaction with Si lattice defects. We use systematic infrared absorption measurements to investigate the evolution of hydrogenated point defects complexes during isothermal annealing. This analysis combined with the electron microscopy data led to the identification of the infrared absorption modes corresponding to the formation of the partially amorphized layer. The obtained results provide an important input for the optimization of the implantation conditions in order to achieve fracture in Si in the wide temperature range. [ABSTRACT FROM AUTHOR]