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Your search keyword '"Le Roux, G."' showing total 10 results
Start Over Author "Le Roux, G." Journal journal of applied physics
10 results on '"Le Roux, G."'

1. Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs

Author

Teissier, R., Sicault, D., Harmand, J.C., Ungaro, G., Le Roux, G., and Largeau, L.

Subjects
Photoluminescence -- Research, Physics -- Research, Quantum wells -- Research, Valence -- Research, Physics
Abstract

Research describing band-gap and valence band offset energies of pseudomorphic GaAsSb layers is presented. In particular a detailed comparison of these values with previously published data is given.

Published
2001

4. Oxide confining layer on an InP substrate

Author

Legay, P., Caillet, F., Decobert, J., Leprince, L., Le Roux, G., and Quillec, M.

Subjects
Oxidation-reduction reaction -- Research, Chemical vapor deposition -- Usage, Superlattices as materials -- Research, Epitaxy -- Research, Physics
Abstract

Research was conducted to examine the wet thermal oxidation of a strained balanced superlattice structure that was epitaxially developed on InP and includes high Al content layers. The oxidation kinetics were considered as a function of oxidation duration and temperature. Results indicate the usefulness of the structure as a confining layer for monolithic long wavelength vertical cavity surface emitting layers.

Published
1999

6. Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate.

Author

Quillec, M., Marzin, J. Y., Primot, J., Le Roux, G., Benchimol, J. L., and Burgeat, J.

Subjects
SUPERLATTICES, INDIUM, GALLIUM arsenide, INDIUM phosphide
Abstract

Presents a study which considered the growth and characterization of indium[sub x]gallium[sub 1-x]arsenide/indium[sub y]gallium[sub 1-y] strained-layer superlattice on indium phosphide substrate. Discussion of the growth; X-ray characterization; Optical characterization.

Published
1986
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9. Wet thermal oxidation of AlAsSb alloys lattice matched to InP.

Author

Legay, P., Petit, P., Le Roux, G., Kohl, A., Dias, I. F. L., Juhel, M., and Quillec, M.

Subjects
ALLOYS, OXIDATION
Abstract

Wet thermal oxidation of AlAsSb was investigated. The oxidation kinetics was studied as a function of temperature and oxidation duration. An expression to allow accurate determination of the oxide depth for any temperature and time was established. Secondary ion mass spectrometry profiles and x-ray diffraction were used to demonstrate that an interfacial layer, composed of pure Sb and As and textured on InP, is formed during the oxidation process. [ABSTRACT FROM AUTHOR]

Published
1997
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