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It has been hypothesized that the variation of the critical currents in Nb/Al–AlO x /Nb junctions is due to, among other effects, the presence of grain boundaries in the system. Motivated by this, we examine the effect of grain boundaries on the critical current of a Josephson junction. We assume that the hopping amplitudes are dependent on the interatomic distance and derive a physically realistic model of distance-dependent hopping amplitudes. We find that the presence of a grain boundary and associated disorder is responsible for a very large drop in the critical current relative to a clean system. We also find that when a tunnel barrier is present, grain boundaries cause substantial variations in the critical currents due to the disordered hoppings near the tunnel barrier. We discuss the applicability of these results to Josephson junctions presently intended for use in superconducting electronics applications. [ABSTRACT FROM AUTHOR]

We investigate theoretically the origins of observed variations in the critical currents of Nb/Al-AlO x /Nb Josephson junctions in terms of various types of disorder. We consider the following disorder sources: vacancies within the Al layer, thickness variations in the AlO x layer, and "pinholes" (i.e., point contacts) within the AlO x layer. The calculations are all performed by solving the microscopic Bogoliubov–de Gennes Hamiltonian self-consistently. It is found that a small concentration of vacancies within the Al layer is sufficient to suppress the critical current, while the presence of a small number of thick regions of the oxide layer induces a similar effect as well. The pinhole scenario is found to result in anomalous behavior that resembles neither that of a pure tunnel junction nor that of a superconductor–normal–superconductor junction but a regime that interpolates between these two limits. We comment on the degree to which each of the three scenarios describes the actual situation present in these junctions. [ABSTRACT FROM AUTHOR]

Three-dimensional atom probe tomography was used to characterize the segregation of B dopant atoms to grain boundaries in polycrystalline Si after flash-assisted rapid thermal annealing. Tomographic reconstructions allowed direct measurement of segregation coefficients, which were found to be greater at lower flash temperatures with thermal budgets that limit grain growth. Hall measurements confirmed the deactivation of B at the grain boundaries, while secondary ion mass spectrometry was used to measure B diffusion in the film. Experimental parameters were then simulated in a diffusion model which accurately predicts the diffusion of B in polycrystalline Si at flash temperatures of 1150 °C, 1250 °C, and 1350 °C, as well as with conventional rapid thermal annealing. [ABSTRACT FROM AUTHOR]

The study of the solid-phase epitaxial growth (SPEG) process of Si (variously referred to as solid-phase epitaxy, solid-phase epitaxial regrowth, solid-phase epitaxial crystallization, and solid-phase epitaxial recrystallization) amorphized via ion implantation has been a topic of fundamental and technological importance for several decades. Overwhelmingly, SPEG has been studied (and viewed) as a single-directional process where an advancing growth front between amorphous and crystalline Si phases only has one specific crystallographic orientation. However, as it pertains to device processing, SPEG must actually be considered as multidirectional (or patterned) rather than bulk in nature with the evolving growth interface having multiple crystallographic orientations. Moreover, due to the increasingly ubiquitous nature of stresses presented during typical Si-based device fabrication, there is great interest in specifically studying the stressed-SPEG process. This work reviews the progress made in understanding the multidirectional SPEG and, more importantly, stressed multidirectional SPEG process. For the work reviewed herein, (001) Si wafers with <110>-aligned, intrinsically stressed Si3N4/SiO2 patterning consisting of square and line structures were used with unmasked regions of the Si substrate amorphized via ion implantation. It is revealed that the stresses generated in the Si substrate from the patterning, both in line and square structures, alter the kinetics and geometry of the multidirectional SPEG process and can influence the formation of mask-edge defects which form during growth to different degrees as per differences in the substrate stresses generated by each type of patterning. Likewise, it is shown that application of external stress from wafer bending during SPEG in specimens with and without patterning can also influence the geometry of the evolving growth interface. Finally, the effect of the addition of SPEG-enhancing impurities during multidirectional stressed growth is observed to alter the evolution of the growth interface, thus suggesting that stress influences on growth are much less than those from dopants. Within the context of prior work, attempts are made to correlate the prior observations in single-directional stressed SPEG with the observations from patterned stressed SPEG reviewed herein. However, as is argued in this review, it ultimately appears that much of the research performed on understanding the single-directional stressed-SPEG process cannot be reasonably extended to the multidirectional stressed-SPEG process. [ABSTRACT FROM AUTHOR]

Modeling the two-dimensional (2D) solid-phase epitaxial regrowth (SPER) of amorphized Si (variously referred to as solid-phase epitaxial growth, solid-phase epitaxy, solid-phase epitaxial crystallization, and solid-phase epitaxial recrystallization) has become important in light of recent studies which have indicated that relative differences in the velocities of regrowth fronts with different crystallographic orientations can lead to the formation of device degrading mask edge defects. Here, a 2D SPER model that uses level set techniques as implemented in the Florida object oriented process simulator to propagate regrowth fronts with variable crystallographic orientation (patterned material) is presented. Apart from the inherent orientation dependence of the SPER velocity, it is established that regrowth interface curvature significantly affects the regrowth velocity. Specifically, by modeling the local SPER velocity as being linearly dependent on the local regrowth interface curvature, data acquired from transmission electron microscopy experiments matches reasonably well with simulations, thus providing a stable model for simulating 2D regrowth and mask edge defect formation in Si. [ABSTRACT FROM AUTHOR]

A fundamental understanding of the effect of scaling amorphous layers on the thermal stability of active concentrations is required for the formation of ultrashallow junctions. A study on the influence of boron on the evolution of the end of range defects for samples containing shallow amorphous layers formed by low energy germanium implants is conducted. Czochralski grown (100) silicon wafers are preamorphized with 1×1015 cm-2, 10 keV Ge+ and subsequently implanted with 1×1015 cm-2, 1 keV B+ such that high boron levels are attained in the end of range region. A sequence of anneals are performed at 750 °C, under nitrogen ambient for times ranging from 1 s to 6 h and the end of range defect evolution is imaged via plan-view transmission electron microscopy (TEM). Defect analyses are conducted utilizing quantitative TEM which indicates substantial differences in the defect evolution for samples with boron in the end of range. The extended defects observed are very unstable and undergo a fast dissolution. In contrast, stable defects are observed in the experimental control in which the evolution follows an Ostwald ripening behavior. Secondary ion mass spectroscopy analyses confirm the ephemeral nature of the defects observed and also demonstrates drastic reductions in interstitial supersaturation. In addition, uphill-type diffusion is observed to occur for a short time frame, which emphasizes a transient interstitial supersaturation. Correlation of this data with sheet resistance and active dose measurements conducted on a Hall measurement system strongly indicates the formation of boron interstitial clusters. The high boron concentrations and supersaturation levels attained at the anneal temperature enables the cluster formation. An estimate of the boron concentrations trapped in the clusters is determined from the active dose obtained from the Hall measurements and indicates concentrations much higher than those available in the end of range. This suggests an interstitial migration from the end of range to regions of higher boron levels. Since the end of range is in the vicinity of the highly doped layer it is not isolated from the strain effects induced by the high initial activation levels. Hence it is proposed that the tensile strain stimulates the interstitial migration from the end of range to the boron-doped layer. Consequently, the end of range defects dissolve as the interstitial supersaturation falls below levels required to sustain their evolution. [ABSTRACT FROM AUTHOR]

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges. © 1997 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2 × 10[sup 14]/cm². Subsequent annealing was performed at 750 °C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that 〈311〉 defects are only seen for implant energies ≥ 10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower when 〈 311 〉 defects are present. These results imply there are at least two sources of TED for boron implants (B-I): short time component that decays rapidly consistent with nonvisible B-I pairs and a longer time component consistent with interstitial release from the 〈311〉 defects. [ABSTRACT FROM AUTHOR]

Investigates the interaction between end of range dislocation loops formed from positive germanium implantation and excess point defects. Interaction kinetics between the dislocation loop layer and the damage induced interstitials; Use of secondary ion mass spectroscopy analysis; Calculation of the interstitial flux as a function of time.

Presents a study which discussed the transmission electron microscopy analysis of heavily As-doped, laser and thermally annealed layers in silicon. Change in the density of dislocation loops; Role played by arsenic; Step taken in order to get high conductivity.

Presents a study which investigated the interaction between oxidation-induced point defects and type II dislocation loops intentionally introduced in silicon via ion implantation. Materials and methods used; Results; Conclusions.