1. Scalable memory elements based on rectangular SIsFS junctions
- Author
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A. Ben Hamida, L. N. Karelina, L. S. Uspenskaya, Valery V. Ryazanov, Vasily S. Stolyarov, Razmik A. Hovhannisyan, Sh. A. Erkenov, Igor A. Golovchanskiy, Vitaly V. Bolginov, and V. I. Chichkov
- Subjects
Josephson effect ,Resistive touchscreen ,Magnetization ,Materials science ,Ferromagnetism ,Condensed matter physics ,Plane (geometry) ,Condensed Matter::Superconductivity ,General Physics and Astronomy ,Binary number ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Ternary operation ,Voltage - Abstract
We explore the concept of the Josephson magnetic memory element based on a multilayer two-barrier SIsFS Josephson junction storing the digital state by means of the orientation of magnetization in the F-layer. A diluted PdFe alloy with 1% magnetic atoms is used as a ferromagnet (F), and a tunnel AlOx layer (I) ensures a high voltage in the resistive state. We have studied two junctions of a rectangular shape in which two digital states are defined by the orientation of the residual F-layer magnetization set along or across the junction in the plane of the ferromagnetic barrier. Implementations of both binary and ternary logic elements are demonstrated. A scalability of rectangular memory elements is analyzed using micro-magnetic modeling.
- Published
- 2021
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