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The possible nature of metastable capture centers giving rise to persist photoconductivity (PPC) effect in As-doped p-ZnO was investigated using the photoluminescence result. Through the plot of log σph vs. 1/T and temperature-dependent PPC-decay process, the metastable trapping centers were extracted to be 15.1, 178.2, 180.6, and 291.9 meV. The shallow level of 15.1 meV was related to the binding energy of the neutral acceptor bound exciton. Also, the deep levels of 178.2 and 180.6 meV were caused by complex acceptor states of AsZn-2VZn located at 185 meV above the edge of the valence band. Furthermore, the trapping center of 291.9 meV was corresponded to the hole capture barrier of VZn located at 300 meV above the valence band. Therefore, these trapping centers were deeply related to the AX centers originating the native defects due to VZn or defect complexes of the As-implanted dopant in ZnO. Also, these defects, induced by the metastable AX centers, were concluded to be responsible for the PPC effect. [ABSTRACT FROM AUTHOR]

Focuses on a study that described the distortion of band-edge luminescence in indium phosphide due to self-absorption. Experiment; Results and discussion.

Presents a study that examined recombination involving radiative surface states on InP semiconductors by low-temperature photoluminescence. Background on surface states on InP; Analysis of the peak emission energy; Results and implications.

Examines a commonly observed photoluminescence band in indium phosphide near 1.35 eV. Significance of ion implantation in the fabrication of electronic devices based on InP; Recombination mechanism involved in the 1.35-eV band; Determination of the nature of the recombination mechanism involved in the 1.35-eV peak.

Studies optical transitions in InP which arise from moderate-temperature annealing or dielectric encapsulation. Details on the experiment; Discussion of findings; Conclusion.

Presents a study which investigated the effects of gas ambient changes on the photoluminescence intensity and the conductivity of chemically cleaned indium phosphide and gallium arsenide. Experimental details; Results and discussion; Conclusion.

Presents a study which reported the current-voltage characteristics of an oxygen implant-isolated region of a GaAs/AlGaAs heterostructure between 25 and 295 K. Effects dominant in the current conduction; Cause of the bulk conduction in the implant-isolated region; Components in which the resistive current can further be separated.

Presents information on a study which observed radiative surface recombination centers on indium phosphate by low-temperature photoluminescence (PL). Measurements of PL; Effects of various chemical treatments on PL spectral features; Investigation of the role of surface stoichiometry in generating the 1.4-electronvolt transition.