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Heterostructues based on II-VI semiconductor compounds applications are used in light emitting devices. The various parasitic phenomena that influence electrical properties of low dimensional CdTe/Cd(sub 1-x)Mg(sub x)Te heterostructures, and how they can be minimized or even eliminated are described.

We report on the optical properties of structures containing self assembled CdTe quantum dots (QDs) combined with Te and Se based distributed Bragg reflectors either in a half cavity geometry with a relatively broad cavity mode or in a full cavity geometry where the cavity mode is much narrower. We show that for both structures the extraction coefficient of the light emitted from the QDs ensemble is enhanced by more than one order of magnitude with respect to the QDs grown on a ZnTe buffer. However, a single QD line broadening is observed and attributed to an unintentional incorporation of Se in the vicinity of the CdTe QDs. We show that postponing the QDs growth for 24 h after the distributed Bragg reflector deposition allows recovering sharp emission lines from individual QDs. This two step growth method is proven to be efficient also for the structures with CdTe QDs containing a single Mn2+ ion. [ABSTRACT FROM AUTHOR]

Dynamics and mechanisms of photocreated carriers decay in individual core/shell (Zn,Mn)Te/ (Zn,Mg)Te semimagnetic nanowires are studied with a high temporal resolution. Exciton lifetime determined to 44 6 5 ps is found to increase to 78 6 5 ps upon application of magnetic field of up to 10 T. A quantitative modeling attributes the effects observed in time-resolved and time-integrated micro-photoluminescence to the magnetic field induced quenching of exchange Auger type, non-radiative carrier recombination related to Mn2þ ions. The reported properties of the semimagnetic nanowires are promising for their implementation in high-speed devices exploiting light-induced conductivity. VC 2015 AIP Publishing LLC. [ABSTRACT FROM AUTHOR]