1. Full band Monte Carlo simulation of electron transport in 6H-SiC
- Author
-
Nilsson, Hans-Erik, Hjelm, Mats, Frojdh, Christer, Persson, Clas, Sannemo, Ulf, and Petersson, C. Sture
- Subjects
Monte Carlo method -- Usage ,Electron transport -- Research ,Silicon carbide -- Research ,Physics - Abstract
Electron transport in 6H-SiC was investigated through a full band Monte Carlo simulation model. The Monte Carlo employs four conduction bands obtained from a full potential band structure computation based on the local density approximation of the density functional theory. Electron-phonon coupling constants were deduced by fitting the Monte Carlo simulation results to available experimental data for the mobility as as function of temperature. The saturation velocity perpendicular to the c axis was observed to be near 2.0 X 10(raised to power 7) cm/s, which is in good agreement with experimental data.
- Published
- 1999