Search

The effects of substituted Ce concentration on the magnetic and transport properties of the molecular beam epitaxy (MBE) deposited Si:Ce films are examined. The magnetic moment and cusp temperatures in the p-T and x-T curves increase with the increase in the amount of substituted Ce for Si.

The effect of carrier type for magnetic and magnetotransport properties of Si:Ce films having n-type or p-type conduction is discussed. The analysis of the resistivity below the cusp temperature indicated that the spin diffusion mode of p-type sample corresponding to longer wavelength than that of the n-type sample and the magentoresistance (MR) behavior supports the notion that there is positive magnetic interaction in Si:Ce film with p-type conduction.