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A new study confirms the generation of artificial electronic structures in two-dimensional In0.4Ga0.6As/GaAs(311)B quantum dot superlattices.

Si-implanted thermal SiO2 films have two photoluminescence (PL) bands peaked at 4.3 eV and 2.4 eV respectively under -5 eV excitation. Following thermal annealing, the peak energy of the low-energy band moved from 2.4 eV to 2.7 eV, with annealing temperature rising to 1100 degrees C. The change of PL characteristics through annealing temperature is consistent with the recovery of the implantation-induced structure damage. The two PL bands could be due to neutral oxygen vacancies.

The effect of annealing on the electroluminescence (EL) was studied by examining the EL from Si+ implanted SiO2 prepared by thermal oxidation. The results were then compared with the photoluminescence to clarify its application in the study of Si-based visible light emitting materials. The results revealed that both EL and PL emanated from the same three luminescence bands around 470, 600 and 730 nm, with the 470 and 730 nm bands dominating the PL spectra in the samples annealed below and above 1000 degrees C, respectively.

Compares the electroluminescence (EL) from Si+ implanted SiO2 thin film prepared by thermal oxidation with photoluminescence (PL) properties. Effective way to fabricate Si based visible light emitting materials; Enhancement of mechanical and thermal stability of materials; Mechanism of PL; Prevention of the fabrication of efficient light emitting diodes.

Focuses on an experiment which reported that SiO2 films were extensively used as passivation layers and electric insulation layers in silicon integrated circuit devices. Details on the experiment; Information on the silicon integrated circuit fabrication processes; Results and discussion on the experiment.