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The influence of the phase shift between the signal and pumping wave on the process of parametric amplification of microwave spin wave pulses has been examined. The experiment was specifically made in the nonadiabatic regime, where the pumping field is strongly localized in a region on the order of the spin wave carrier wavelength. In this regime all previous experiments exhibited a strong random modulation (beating) of the amplified output signal. For a fixed phase shift between the signal and the pumping carrier waves the output signal was found to be stable, and no beating was observed. The amplitude of the amplified output pulse varies from the maximum value (corresponding to the maximum gain factor of 15 dB) to the minimum value (corresponding to almost no gain) when the phase shift between signal and pumping wave is changed. The measured phase interval between two consecutive minima in the phase dependence of the output power is equal to π.

Magnetic film scrolls have been fabricated via a deterministic release of rectangular patterns of bimetallic Ti (20 nm)/Ni (20 , 30 or 40 nm) films from a sacrificial Cu underlayer. The diameter of the scrolls varied from 2.64 μm to 4.28 μm with increasing thickness of the Ni layer from 20 to 40 nm. This behavior was found to be consistent with the model of bilayered film with interfacial strain between the Ti and Ni layers of about Δɛ = 0.01. Changing the geometry of the patterns from flat patterns to scrolls led to changes in their magnetic properties.

Thin films of Fe-Ni with graded composition have been deposited on a Si (001) substrate at room temperature by co-sputtering of Fe and Ni with variable rates of the constituting elements. The composition of the films was changing linearly across the thickness from Fe80Ni20 to Fe6Ni94. Five samples were studied with the thickness of 30, 50, 100, 150, and 200 nm. The hysteresis loops measured with the field applied in the film plane had square shape and the coercivity was varying from 11 to 22 Oe. However, the loops for the field perpendicular to the film plane displayed unusual shapes consisting of a double-step hysteresis loop at low fields and unhysteretic part at higher fields. The size of the steps varied with the thickness of the film. The most likely source of the double step hysteretic curves was identified as magnetostrictive stresses at the film/substrate interface. This was evidenced by the disappearance of the second hysteresis step after annealing at 200 °C for 1 h and significant changes of th...

The present work is aimed at fabricating bi-layer aluminum nitride (AlN)/cobalt iron (CoFe) magnetoelectric (ME) thin films using reactive rf/dc magnetron sputtering. A systematic study on structural, morphological, piezoelectric, magnetic and magnetoelectric properties is undertaken. Except for AlN and CoFe, no other phases were detected with the layer thicknesses measured at 160 and 130 nm, respectively. The rms roughness measured was around 2.096 nm for AlN and 1.806 nm for CoFe. The bi-layer thin film exhibited both good piezoelectricity and ferromagnetism, as well as ME effect. A 52% change observed in the piezoelectric signal, measured using magnetic field assisted piezoresponse force microscopy, can be ascribed to the existence of a stress-mediated magnetoelectric coupling between AlN and CoFe.

Bulk and surface sensitive photoemission core line spectra have been acquired for Si and Ge following each step in the process sequence of Si0.7Ge0.3/2 nm HfO2/2.5 nm TaN/950 °C gate stack film systems. Extended x-ray absorption fine structure measurements have confirmed Ge segregation and pileup to form a Ge-rich layer at the SiGe surface during Si oxidation. Transmission electron micrograph cross-sections with electron energy loss element profiles have verified the effectiveness of plasma nitridation for restricting SiGe oxidation and achieving

Lead-free multiferroic particulate composites of Na0.5Bi0.5TiO3 (NBT) and CoFe2O4 (CFO) have been synthesized by solid-state sintering method. A systematic study of structural, magnetic and magnetoelectric (ME) properties is undertaken. Structural and morphology studies carried out by x-ray diffraction and field emission scanning electron microscopy indicate formation of single phase for parent phases and presence of both phases in the composites. Magnetic properties are investigated using vibrating sample magnetometer and ferromagnetic resonance (FMR) measurements at room temperature. Strong ME coupling is demonstrated in NBT-CFO 70-30 mol% composite by an electrostatically tunable FMR field shift up to 428 Oe (at E = 3.9 kV/cm), which increases to a large value of 640 Oe at E = 6.8 kV/cm. Furthermore, these lead-free multiferroic composites exhibiting electrostatically induced magnetic resonance field at microwave frequencies provide great opportunities for electric field tunable microwave devices.

Several Fe nanostructures with different lengths, diameters, and separations of the constituting magnetic components have been synthesized using anodized alumina membranes (AAMs) to understand the influence of these parameters on their magnetic properties. Fe nanostructures with high crystallinity and (110) orientation were synthesized by electrodeposition at room temperature in regular AAMs and mild-hard AAM (Mi-Ha AAM). Fe nanostructures with different aspect ratios (1:1, 1:10, and 1:75) in the form of nanodots, nanorods, or nanowires were synthesized in regular AAMs with the 100 nm interpore distance. Mi-Ha AAMs with two different pore sizes (70 and 120 nm) and 250 nm interpore distances were used to investigate the effect of the interactions and of the diameter of the wires on their magnetic behavior. Nearly linear magnetization characteristics with small coercivity, observed for Fe nanowires, suggest the magnetization rotation to be the predominant magnetization process for the field applied transver...

We report magnetic properties of Y3Fe5O12 (YIG) films on thermally oxidized Si (100) and (Gd3Ga5O12) GGG (111) substrates. Amorphous YIG films with the cation ratio Y:Fe=3.04:4.96, deposited by rf-magnetron sputtering at room temperature in pure argon atmosphere, were crystallized by postannealing (600–900 °C) of amorphous films in air and in 500 ppm oxygen. While postannealed YIG films on GGG substrates were well textured, those on Si (100) were randomly oriented. High-quality YIG films could be better obtained in the reduced (500 ppm O2) oxygen atmosphere than air since more effective YIG growth during annealing process and lower FMR linewidth (ΔH) of films could be achieved.

In order to investigate the temperature and the annealing conditions dependence of magnetic properties in Fe72.1Sm5.2O22.7(at. %) thin films, such as the effective magnetization Meff, the spectroscopic splitting factor g, and the exchange stiffness constant A, we carried out ferromagnetic resonance (FMR) experiments. Fe–Sm–O thin films were deposited in an argon and oxygen mixed atmosphere using a rf magnetron sputtering apparatus at room temperature. The g is almost constant in the temperature range from 298 to 238 K, but increases with decreasing temperature in the range below 238 K. The A increases slightly with decreasing temperature to 238 K, and then increases linearly below 238 K. When the annealing time increases up to 6 h the Meff is almost constant, but the A decreases slightly with increasing annealing time.