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We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the "dead zone" at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation. [ABSTRACT FROM AUTHOR]

The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode-the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 μW was obtained from a 600 nm long × 120 μm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible-the Monte Carlo model used predicts power output at frequencies over 300 GHz. [ABSTRACT FROM AUTHOR]

Coupled longitudinal-optical (LO)-phonon-plasmon excitations were studied using confocal micro-Raman spectroscopy. The high-quality Si-doped GaN epilayers were grown in a Gunn diode structure on (0001) sapphire substrates by plasma assisted molecular beam epitaxy. Depth-profiled Raman spectra exhibit a spatial variation of both low, ω-, and high, ω+, frequency coupled phonon-plasmon modes (CPPMs) in the n-GaN layers. To describe the features of the CPPMs in the Raman spectra a self-consistent model that includes both the electro-optic and deformation-potential as well as charge-density fluctuation mechanisms as important processes for light scattering in n-GaN has been proposed. An agreement between the theoretical and experimental line shapes of the Raman spectra is obtained. From the best line-shape fitting of the CPPMs the depth profiles of the plasmon and phonon damping, plasmon frequency, free carrier concentrations, and electron mobility as well as the contributions of the electron-phonon interaction and charge density fluctuations to the Raman cross section in the GaN layers are determined. It is found that these depth profiles exhibit considerable nonuniformity and change at different laser pump-power excitations. Despite the high electron concentration in the n+-GaN layers, a strong peak of the unscreened A1(LO) phonon is also observed. A possible origin for the appearance of this mode is discussed. [ABSTRACT FROM AUTHOR]