1. The oxygen effect in the growth kinetics of platinum silicides
- Author
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G. Pignatel, G. Queirolo, Sergio Valeri, G. Majni, Filippo Nava, and A. Cembali
- Subjects
oxygen effect ,platinum silicide ,growth ,Materials science ,Silicon ,Annealing (metallurgy) ,Metallurgy ,Inorganic chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Oxygen ,Metal ,Platinum silicide ,chemistry.chemical_compound ,chemistry ,visual_art ,Silicide ,visual_art.visual_art_medium ,Limiting oxygen concentration ,Platinum - Abstract
Silicide formation is strongly affected by the presence of oxygen contained in the metal film. A study has been performed by heating at various times and temperatures samples constituted by a thin Pt film sputter deposited on a silicon substrate. Four different oxygen concentrations were implanted in the Pt film ranging from 1 to 0.1 at.%. The presence of oxygen slows down the growth rate of Pt2Si. At 315 °C in the sample with an oxygen concentration of 1 at.%, about 1000 A of Pt2Si are formed after 20 min of annealing. During the silicide formation, the oxygen originally contained in the platinum films segregates at the Pt2Si/Pt interface. This accumulation acts as a barrier for the transport of Pt and a new phase, PtSi, can form at the Pt2Si/Si interface. The dose necessary to stop the Pt2Si reaction is about (2–4)×1015 at./cm2 at 315 °C.
- Published
- 1981
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