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During the last few years, great interest has been given to research in organic solar cells. Apart from the low cost techniques needed for the production of the active layers, the plasticity of these types of materials offers an additional benefit compared to traditional silicon-based solar cells. However, the commercialization of organic photovoltaic technologies is limited by rapid degradation and low efficiency. Recently, the use of luminescent down-shifting (LDS) films has been explored as a tool for increasing the external quantum efficiency of organic-based devices. A previously observed superposition in the emission–absorption spectra of Kremer blue (Kb) and Coumarin 7 (C7) dyes suggests that an energy transfer process can take place among these molecules. Decay time photoluminescence measurements in K b 100 − x C 7 x samples were carried out to confirm a Foster resonance energy transfer process. An optimization process following the design of experiments methodology was carried out to adjust the optical properties of K b 100 − x C 7 x films for applications in the P 3 H T: P C 61 B M organic photovoltaic device. An increment of 18.6% in the short circuit current density ( J s c) of P 3 H T: P C 61 B M devices coated with a K b 92.5 C 7 7.5 LDS film was observed. A degradation test shows a rapid drop in the electric current density of devices without the LDS film, which we attribute to the so-called burn-in, widely reported in the literature. For devices coated with the K b 92.5 C 7 7.5 LDS film, no rapid drop in the electric current density was observed, suggesting that the use of the luminescent layer mitigates the photoinduced burn-in loss.

AlGaAs structures with different aluminum concentration (x=0.0, 0.17, 0.30, and 0.40) were characterized by photoluminescence and photoreflectance techniques. The temperature dependence of optical transitions in the temperature ranging from 2 to 300 K were investigated. Y. P. Varshni [Physica (Utrecht) 34, 194 (1967)], L. Vina et al. [Phys. Rev. B 30, 1979 (1984)], and R. Passler [Phys. Status Solidi B 200, 155 (1997)] models were used to fit the experimental points. The Passler model gave the best adjustment to the experimental points. The tree models showed that the empirical parameters obtained through the adjustment of the experimental data in the three different models are aluminum composition dependent in the ternary alloy.

We identify quasi-donor-acceptor pair transitions in the photoluminescence spectra of GaAsSb and AlGaAsSb layers, lattice matched to InP, and grown by molecular-beam epitaxy. These alloys show compositional inhomogeneity due to phase separation resulting from miscibility gaps. The presence of Al in the quaternary alloy increases the fluctuation of the electrostatic potential in the epitaxial layer, increasing the variation of recombination energy as a function of intensity excitation in the range of low temperatures.