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Thin films of c-Si–QDs embedded in an a-SiOx dielectric matrix forming arrays of double barrier structures have been fabricated by reactive rf-magnetron sputtering at ∼400 °C, without post-deposition annealing. The formation of larger size c-Si–QDs of reduced number density in homogeneous distribution within a less oxygenated a-SiOx matrix at higher plasma pressure introduces systematic widening of the average periodic distance between the adjacent ‘c-Si–QDs in a-SiOx’, as obtained by X-ray reflectivity and transmission electron microscopy studies. A wave-like pattern in the J-E characteristics identifies the formation of periodic double-barrier structures along the path of the movement of charge carriers across the QDs and that those are originated by the a-SiOx dielectric matrix around the c-Si–QDs. A finite distribution of the size of c-Si–QDs introduces a broadening of the current density peak and simultaneously originates the negative differential resistance-like characteristics, which have suitable ...