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Start Over Author "Cronquist, B." Journal journal of applied physics
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1. Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current

Author

Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., and Cronquist, B.

Subjects
Silicon compounds -- Research, Thin films -- Electric properties, Electric currents -- Analysis, Electron beams -- Research, Physics
Abstract

Quantitative imaging in very thin silicon dioxide films reveals a new low-voltage contrast mechanism, the true oxide electron-beam-induced current, for the local defects in the films at 3.5 MV per cm of electric fields. The new low-voltage contrast mechanism has an opposite sign to tunneling current microscopy contrast mechanism. The local thinning defect is hence bright and dark at high and low bias voltages, respectively.

Published
1995

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