20 results on '"Cockayne, D"'
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2. Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoliuminescence microscopy
3. Optical transition in infrared photodetector based on V-groove Al[sub 0.5]Ga[sub 0.5]As/GaAs multiple quantum wire.
4. Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires.
5. Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained-layer heterostructures.
6. Theoretical consideration of equilibrium dissociation geometries of 60° misfit dislocations in single semiconductor heterostructures.
7. The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures.
8. Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained-layer heterostructures.
9. Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems.
10. Electron optical characterization of cubic boron nitride thin films prepared by reactive ion plating.
11. The structure and properties of ion-beam-synthesized boron nitride films.
12. Anodic-oxide-induced interdiffusion in GaAs/AIGaAs quantum wells.
13. Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate.
14. Ion damage buildup and amorphization processes in GaAs–AlxGa1-xAs multilayers.
15. Precise determination of the periodicity for Mo/Si and W/C metallic multilayers by electron and x-ray diffraction.
16. Ion damage buildup and amorphization processes in AlxGa1-xAs.
17. Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
18. Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
19. Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
20. Ion damage buildup and amorphization processes in GaAs–AlxGa1−xAs multilayers
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