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We have determined the write power density dependence on heating pulse width and antiferromagnet (AF) thickness using magnetic tunnel junctions whose storage layer is exchange biased with IrMn or FeMn. An increase in write power density needed to write the storage layer has been observed for both AF as pulse width is decreased from 0.1 ms to 10 ns. Quasistatic blocking temperatures (Tb) were measured on both full sheet and patterned samples, showing a reduction in Tb for patterned samples which we link to process induced damages. Power-temperature relationship was established based on a correspondence between writing power for long pulse duration and quasistatic Tb measurement. Both write power density and associated temperature results show a dependence of the Tb on AF thickness at pulse width as short as 10 ns. Particularly for IrMn, the relationship between write power and pulse width becomes weakly dependent on the AF thickness above a certain AF thickness. The write power density is significantly low...

In order to improve the magnetic and electrical properties of low resistance alumina based magnetic tunnel junctions, an off-axis method of sputtering has been investigated. It is shown that the tunnel magnetoresistance ratio can be greatly increased when there is an offset between the target and the wafer axes during the deposition of the ultrathin aluminum layer (off-axis sputtering) prior to its natural oxidation. The ferromagnetic coupling between the pinned and the free layer through the alumina barrier is also reduced compared to a classical on-axis deposition. This observation is interpreted as an improvement of the barrier quality, reducing both the roughness and the pinholes density. We assume that when the Al layer is sputtered off-axis, the magnetic and aluminum layers are protected from energetic neutralized Ar atoms bombardment.

The magnetic switching of the exchange biased storage layer in thermally assisted magnetic random access memory cells has been studied in the nanosecond time domain. Under reversed static external field, the magnetic tunnel junctions (MTJs) were subjected to current heating pulses long enough to heat the structure above the blocking temperature of the antiferromagnetic layer. The magnetic response of the storage layer was characterized by single-shot real-time measurement of MTJ resistance. The switching of the storage layer exhibits stochastic fluctuations. Nevertheless, using a heating current density of 4.7×106 A/cm2 corresponding to a bias voltage of 1.8 V, the switching takes place in less than 4 ns under 5 mT. Interestingly, the probability of switching versus pulse duration exhibits characteristic periodic steps which are ascribed to a combined effect of the applied field and spin transfer produced by the heating current pulses.

Extraordinary Hall effect and x-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta, etc.) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the plasma oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in plane to out of plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via x-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface. (C) 2008 American Institute of Physics.

Submicron magnetic tunnel junctions exhibiting perpendicular magnetic anisotropy have been prepared by sputtering. They associate a hard and a soft electrode based on Co∕Pt multilayers, separated by an amorphous alumina barrier. The soft electrode is either free or exchange biased by an antiferromagnetic layer. The magnetoresistance ratio reaches 8% at room temperature after patterning junctions with diameter down to 200nm. The macroscopic magnetic properties were investigated by extraordinary Hall effect and conventional magnetometry measurements. The magnetic moments of both electrodes are out of plane. Two well-separated switching fields allow the realization of well-defined parallel and antiparallel configurations of the magnetizations.