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Studies the correlation between electrical and compositional properties of silicon oxide and indium antimonide interfaces. Obstacles for obtaining reliable metal-oxide-semiconductor devices based on III-V compound semiconductors; Methodology of the study; Discussion on the results of the study.

Investigates insulators in conjunction with two different surface treatments to determine their suitability for transistor fabrication on Ga[sub0.47]In[sub0.53]As/Al[sub0.48]In[sub0.52]As. Conduction theories; Sample preparation; Information on the Auger electron spectroscopy measurements.

Presents information on a study which used surface photovoltage spectroscopy (SPS) for direct measurements of the extrinsic surface states within the band gaps of p-InP and n-gallium arsenide before and after aluminum (Al) and gold (Au) deposition. Characterization of metal/semiconductor interfaces; Experiments on SPS performed; Results of surface state energies for the same semiconductor for Al and Au coverages.

Presents a study that examined the properties of indium oxide/n-gallium arsenide semiconductor junctions. Analysis of the electrical and structural properties of the samples; Determination of the chemical composition of the samples; Effect of oxygen pressure on oxide stoichiometry and the indium oxidation state.

Presents a study which investigated ion-beam-sputtered indium-tin oxide as a function of the oxygen pressure during deposition. Experimental details; Results; Discussion.