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Niobium nanoclusters were produced using a plasma gas condensation process. The influence of gas flow rate, aggregation length, and source current on the nanocluster nucleation and growth were analyzed. Nanoclusters with an average diameter from 4 nm to 10 nm were produced. Cluster size and concentration were tuned by controlling the process inputs. The effects of each parameter on the nucleation zone, growth length, and residence time was examined. The parameters do not affect the cluster formation and growth independently; their influence on cluster formation can be either cumulative or competing. Examining the nucleation and growth over a wide combination of parameters provided insight into their interactions and the impact on the growth process. These results provide the opportunity for a broader understanding into the nucleation and growth of nanoclusters and some insights into how process parameters interact during deposition. This knowledge will enhance the ability to create nanoclusters with desired size dispersions. [ABSTRACT FROM AUTHOR]

Presents a study which examined the compensation of impurities in an oxygen-doped metalorganic vapor phase epitaxy grown gallium arsenide (GaAs). Use of deep level transient spectroscopy to characterize energy levels; Factors that influenced the nature of deep levels; Alkoxide contaminants in the metalorganic precursors.

Focuses on the characterization of metal organic vapor phase epitaxy-grown epitaxial oxygen-doped gallium arsenide for semi-insulating applications. Data on the concentrations of oxygen and aluminum determined from secondary-ion-mass-spectroscopy analysis of the samples; Sample preparation; Results.