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Your search keyword '"Beysen, Sadeh"' showing total 3 results
Start Over Author "Beysen, Sadeh" Journal journal of applied physics
3 results on '"Beysen, Sadeh"'

1. Transition between onion states and vortex states in exchange-coupled Ni-Fe/Mn-Ir asymmetric ring dots

Author

Sasaki, Isao, Kobayashi, Hiroshi, Nakatani, Ryoichi, Beysen, Sadeh, Endo, Yasushi, Kuroiwa, Takeharu, Kawamura, Yoshio, Aya, Sunao, and Takenaga, Takashi

Subjects
Nickel alloys -- Magnetic properties, Magnetic fields -- Research, Vortex-motion -- Analysis, Physics
Abstract

The transition between onion states and vortex states in exchange-coupled Ni-Fe/Mn-Ir asymmetric ring dots is investigated. A direction of domain wall motion, during the transition from the single-domain state to the vortex state through the onion state, depends on a sweep direction of an external field.

Published
2006

2. Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells.

Author

Nakatani, Ryoichi, Yoshida, Tetsuo, Endo, Yasushi, Kawamura, Yoshio, Yamamoto, Masahiko, Takenaga, Takashi, Aya, Sunao, Kuroiwa, Takeharu, Beysen, Sadeh, and Kobayashi, Hiroshi

Subjects
MAGNETIC memory (Computers), CHIRALITY, MAGNETIZATION, SYMMETRY (Physics), RANDOM access memory, MAGNETIC fields
Abstract

Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2004
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3. Control of pinned layer magnetization direction in spin-valve-type magnetic tunnel junction with an IrMn layer

Author

Takeharu Kuroiwa, Beysen Sadeh, Kazunao Sato, Hiroshi Kobayashi, and Takashi Takenaga

Subjects
Magnetic anisotropy, Tunnel magnetoresistance, Magnetization, Materials science, Magnetic domain, Condensed matter physics, Condensed Matter::Superconductivity, Spin valve, General Physics and Astronomy, Magnetic particle inspection, Layer (electronics), Magnetic field
Abstract

We have experimentally investigated a method of controlling the magnetization direction of a CoFe pinned layer in a spin-valve-type magnetic tunnel junction (MTJ) with an IrMn layer. Arbitrary control of the direction of the pinned layer magnetization was performed by a postannealing process in conditions above the blocking temperature of IrMn and in a magnetic field to saturate the magnetization of the pinned layer. The results show that it is possible to control and to uniformly rearrange the direction of the pinned layer magnetization in MTJs with a postannealing process in the magnetic random access memories manufacturing process.

Published
2004

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