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In0.17GaAs/GaAsP0.06 multiquantum well structures, together with secondary electron microscopy are characterized using ultrahigh vacuum cross-sectional Kelvin probe force microscopy. Individual 8 nm quantum wells are well resolved in both methods, and are found to be in good agreement with numerical simulations of the work function profile.

Research describing indentation testing on nickel and copper samples with low current flow is presented. The low current electroplastic effect is examined with respect to the magnetic structure of the metals under test.

The results of the study on the influence of substrate defects on the morphological and transport properties of Y1Ba2Cu3O(sub 7-x) high T(sub c) superconducting films, reveal that substrate defects are characterized by dispersive and nondispersive cathodoluminescence in the scanning electron microscope. The secondary electrons were utilized in the study of the morphology of the films and the results were compared with the substrate information.

The secondary electron emission flux in a scanning electron microscope is a powerful tool for delineation of electrically active dopant concentration, built-in potentials, and surface electric fields in semiconductor junctions. In all the secondary electron images of p-n junctions, the p-doped regions appear brighter than n-doped regions. We present a theory for the doping contrast in p-n junctions that is based on the secondary electron emission yield and surface band bending extracted from Kelvin probe force microscopy measurements. We show that the contrast is governed by the secondary electron escape depth, and their escape probability which is related to the secondary electron energy distribution and the effective electron affinity. It is found that the escape depth is the main factor determining the dopant contrast, and the escape probability has a smaller effect. In addition, our theory explains the logarithmic dependence of the measured contrast on the acceptor concentration in silicon reported by many groups. [ABSTRACT FROM AUTHOR]