1. Determination of lattice parameter and of N lattice location in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epilayers
- Author
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Antonio Drigo, H. Mariette, L. Grenouillet, G. Ciatto, D. De Salvador, P. Duvaut, Gabriele Bisognin, Marina Berti, P. Gilet, Cecilia Mattevi, Physics and Astronomy Department, University of Padova, 35131 Padova, Italy, European Synchroton Radiation Facility [Grenoble] (ESRF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Spectrométrie Physique (LSP), and Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS]Physics [physics] ,Materials science ,Condensed matter physics ,ALLOY ,Heterostructure ,III-V Semiconductors ,X-ray diffraction ,General Physics and Astronomy ,Crystal structure ,Rutherford backscattering spectrometry ,Channelling ,Condensed Matter::Materials Science ,Lattice constant ,Nuclear reaction analysis ,Lattice (order) ,X-ray crystallography ,Ternary operation - Abstract
We have used an experimental strategy that, combining nuclear reaction analysis and Rutherford backscattering spectrometry both in random and channeling geometry, allowed an accurate quantification of the total amount of N in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epitaxial systems (0.038
- Published
- 2004
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