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Beam exit windows are crucial components of any particle accelerator as they provide an interface between the beamline vacuum and target material at atmospheric media. For high beam power machines, special materials and designs are required to withstand high radiation and mechanical loads, while minimizing energy loss during transition and maximizing window lifetime. This research investigates the impact of electron beam exposure to bulk CrMnV and CrMnTiV high entropy alloys (HEAs) with the primary goal of identifying suitable candidate materials for the design of robust and durable exit window settings. The selection criteria include intrinsic characteristics, power dissipation, and mechanical responses. According to the thermodynamic calculations, both equiatomic CrMnV and the addition of 7% of Ti with equiatomic CrMnV yield solid-solutions phases. The structural and mechanical properties of CrMnV and CrMnTiV samples were tested using field emission scanning electron microscopy, atomic force microscopy, scanning electron microcopy with energy dispersive x-ray spectroscopy, x-ray diffraction, and nanoindentation before and after exposure to a dose of ∼66 kGy from a 10 MeV e-beam accelerator. Despite exhibiting beam transmission characteristics comparable to Cr and V, the indentation hardness of HEAs exceeded that of the Cr and V samples by five to six times. The examination of the CrMnTiV irradiated samples revealed organized deformation patterns depicting new features, which we suspect twinning and twin boundaries due to the addition of Ti to CrMnV. Ti, a hexagonal-close-packed crystal structure, is commonly known for deformation twinning behavior. [ABSTRACT FROM AUTHOR]

Direct observation of the capture cross section is challenging due to the need for extremely short filling pulses in the two-gate Deep-Level Transient Spectroscopy (DLTS). Simple estimation of the cross section can be done from DLTS and admittance spectroscopy data but it is not feasible to distinguish temperature dependence of pre-exponential and exponential parts of the emission rate equation with sufficient precision conducting a single experiment. This paper presents experimental data of deep levels in β-Ga2O3 that has been gathered by our group since 2017. Based on the gathered data, we propose a derivation of apparent activation energy (E a m) and capture cross section (σ n m) assuming the temperature dependent capture via the multiphonon emission model, which resulted in a strong correlation between E a m and σ n m according to the Meyer–Neldel rule, which allowed us to estimate low- and high-temperature capture coefficients C 0 and C 1 as well as capture barrier E b. It also has been shown that without considering the temperature dependence of capture cross section, the experimental values of σ n are overestimated by 1–3 orders of magnitude. A careful consideration of the data also allows to be more certain identifying deep levels by their "fingerprints" (E a and σ n) considering two additional parameters (E M N and σ 00) and to verify the density functional theory computation of deep-level recombination properties. [ABSTRACT FROM AUTHOR]

X-ray free electron laser (XFEL) sources coupled to high-power laser systems offer an avenue to study the structural dynamics of materials at extreme pressures and temperatures. The recent commissioning of the DiPOLE 100-X laser on the high energy density (HED) instrument at the European XFEL represents the state-of-the-art in combining x-ray diffraction with laser compression, allowing for compressed materials to be probed in unprecedented detail. Here, we report quantitative structural measurements of molten Sn compressed to 85(5) GPa and ∼ 3500 K. The capabilities of the HED instrument enable liquid density measurements with an uncertainty of ∼ 1 % at conditions which are extremely challenging to reach via static compression methods. We discuss best practices for conducting liquid diffraction dynamic compression experiments and the necessary intensity corrections which allow for accurate quantitative analysis. We also provide a polyimide ablation pressure vs input laser energy for the DiPOLE 100-X drive laser which will serve future users of the HED instrument. [ABSTRACT FROM AUTHOR]

We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed. [ABSTRACT FROM AUTHOR]

Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. Here, we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress. [ABSTRACT FROM AUTHOR]

We report temperature-dependent hot carrier dynamics in liquid-phase epitaxy-grown GaSb1−xBix epilayers with dilute amounts of Bi (x ≾ 0.4%). Degenerate pump–probe (λ = 800 nm) transient reflectivity (PPTR) was used to investigate the carrier dynamics in the epilayers. The PPTR signal consists of two transient processes (fast and slow) at all temperatures for all epilayers. The fast, hot carrier relaxation time, which is attributed to the combined effect of intervalley scattering and thermalization of carriers below cryogenic temperatures (<100 K), is observed to increase with an increase in temperature (≈0.8–2 ps at 6.6 K and ≈4–5 ps at 300 K). However, at higher temperatures (>100 K), the interband CHSH-Auger recombination process affects the band-to-band recombination, leading to an increase in the slower decay time. The findings offer crucial insights for optimizing GaSbBi for hot carrier solar cell applications. [ABSTRACT FROM AUTHOR]

Sputter deposition of ultrathick (≈ 20 μ m) Au–Ta alloy coatings on sphero-cylindrical substrates is key for the fabrication of hohlraums for magnetically assisted inertial confinement fusion. Here, we study the deposition of AuTa 4 alloy coatings onto rotating substrates. We use high-power impulse magnetron sputtering (HiPIMS) in a constant peak target voltage mode. Results show that the target erosion state has a strong impact on the dominant crystallographic phase, microstructure, surface morphology, and electrical resistivity of AuTa 4 films. This is due to effects of changes in the confining magnetic field with target erosion on the HiPIMS discharge characteristics and the sputter source output. We quantify these effects via plasma diagnostics and discuss the optimization of HiPIMS deposition of ultrathick films for cases when target erosion effects dominate film properties. [ABSTRACT FROM AUTHOR]

Small radius Bdot measurements of electrical current delivered by pulsed power devices are routinely compromised by electrode/convolute plasmas endemic to multiterawatt transmission lines. Inferences of delivered current unaffected by these issues have recently been obtained by numerically optimizing consistency between model predictions and local experimental velocimetry data, but these are only unique for shockless velocity profiles. Here, we describe a more general Bayesian method capable of inferring current despite the presence of shocks. Additionally, we describe uncertainty estimates and use of the technique on experimental data. This technique is the first to provide uncertainty estimates on the full current trace delivered to an inertial confinement fusion target. [ABSTRACT FROM AUTHOR]

Mixed valence manganites are potential functional materials due to their unique electromagnetic properties. In this work, half-doped ceramics with the perovskite structure Sm 0.5 Ca 0.5 MnO 3 polycrystalline samples are synthesized by the solid-state reaction method in open air at different final sintering temperatures. Structures and particle sizes are studied by x-ray diffraction and scanning electron microscopy, respectively. Positron annihilation spectroscopy and density-functional theory calculations are used to characterize the intrinsic vacancies in the bulk. Thereafter, the effect of vacancies on the magnetic and magnetoresistance (MR) properties is investigated. We find that Mn monovacancies (V Mn ) exist in the bulk among all the samples, and the concentration of V Mn is different. We suggest a possible defect model that can be well applied to explain the phenomena of their electromagnetic properties. The transition temperature of the charge-order state (T CO ) and ferromagnetic and anti-ferromagnetic (T N ) are most likely related to the concentration of V Mn and the particle sizes or pore sizes, respectively. The glass spin state transition temperature seems to be independent of the defect concentration and type. The metal conductive behavior does not appear in a high magnetic field and at low temperatures, which may be caused by the presence of a high concentration of V Mn in the bulk and oxygen-related defects in the boundary, and the double exchange interaction is suppressed. At temperatures below T N and under a weak magnetic field, the MR is related to the total defect concentration. In addition, the high concentration of V Mn is unfavorable for obtaining a high MR value. [ABSTRACT FROM AUTHOR]

We present an electron microscopy and diffraction study of a Ca x Ba 1 − x Nb 2 O 6 ceramic with x = 0.28 (CBN28), a ferroelectric material with a partially filled tetragonal tungsten-bronze structure. The microstructure has strong similarities to that of Sr x Ba 1 − x Nb 2 O 6 , with an average orthorhombic symmetry and an intimate intermixture of merohedral twin variants at a length scale of tens of nanometers. Superstructure spots in diffraction patterns are displaced by a one-dimensional incommensurate modulation, characterized by a propagation vector δ δ 0. Heating experiments show that δ is strongly coupled to ferroelectric polarization, decreasing as 180 ° ferroelectric domains become more finely spaced and needle-like as the Curie temperature T C is approached during heating and increasing once more above T C. No change in symmetry is observed at T C , consistent with a transition from ferroelectric to antiferroelectric (or ferrielectric) relaxor properties. The superstructure spots and incommensurate modulation disappear ∼ 250 ° C above T C , consistent with polar regions in the material becoming fully transient. [ABSTRACT FROM AUTHOR]

Magnetic van der Waals nanocrystals with intrinsic magnetic anisotropy provide an ideal platform for exploring magnetism in the low-dimensional limit. In this work, we investigated the electronic and magnetic properties of a novel 2D material VClBr 2 by using spin-polarized density functional theory calculations. Various strategies were employed to tune the material properties without changing the chemical composition or introducing defects. A phase transition is observed from semiconducting → metallic → half-metallic phase with ferromagnetic and antiferromagnetic ground state(s) under the application of strain (η) and electric field ( E z). Monte-Carlo simulation based on the Heisenberg spin-chain predicted the Curie temperature ( T c) to be about 340 K under the application of an E z = 2.5 V/nm, a colossal enhancement of ∼ 6700% from its base value. The magnetic anisotropic energy calculation confirms the in-plane easy axis and its strain dependent modulation with a magnetization of ∼ 2.85 μ B /V atom. The coexistence of high temperature spin-ordering along with half-metallicity, strain tunability, low formation energy, and excellent stability endow single layer VClBr 2 to be of promising applications in electric field driven spin gating, room temperature spintronics, and 2D spin circuit design. [ABSTRACT FROM AUTHOR]

This work explores the atomic-scale nature of defects within hafnium dioxide/silicon dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are studied via electrically detected magnetic resonance (EDMR) through both spin-dependent charge pumping and spin-dependent tunneling. When combined, these techniques probe defects both at the Si-side interface and within the oxide-based gate stack. The defects at the Si-side interface are found to strongly resemble Pb-like defects common in the Si/SiO2 system. The defect within the gate stack has not been positively identified in the literature thus far; this work argues that it is a Si-dangling bond coupled to one or more hafnium atoms. The use of EDMR techniques indicates that the defects detected here are relevant to electronic transport and, thus, device reliability. This work also highlights the impressive analytical power of combined EDMR techniques when studying complex, modern materials systems. [ABSTRACT FROM AUTHOR]

Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is an interesting alternative to conventional deposition techniques. However, the adjustability of the electrical properties in such films is unexplored. In this work, we investigated two strategies for tuning the electron concentration in the ion beam created metastable κ-polymorph: adding silicon donors by ion implantation and adding hydrogen via plasma treatments. Importantly, all heat treatments were limited to ≤600 °C, set by the thermal stability of the ion beam fabricated polymorph. Under these conditions, silicon doping did not change the high resistive state caused by the iron acceptors in the initial wafer and residual defects accumulated upon the implants. Conversely, treating samples in a hydrogen plasma converted the ion beam fabricated κ-polymorph to n-type, with a net donor density in the low 1012 cm−3 range and dominating deep traps near 0.6 eV below the conduction band. The mechanism explaining this n-type conductivity change may be due to hydrogen forming shallow donor complexes with gallium vacancies and/or possibly passivating a fraction of the iron acceptors responsible for the high resistivity in the initial wafers. [ABSTRACT FROM AUTHOR]

Recent theoretical and experimental discoveries of two-dimensional (2D) ferromagnetic (FM) materials have sparked intense interest for their potential applications in spintronics. 2D FM materials with high spin polarization are extremely desirable for future low-dimensional spintronics. Half-metallicity plays a key role in the development of such devices. Here, we reported a new 2D nanomagnet VClI 2 using the first-principles based density functional theory calculations. VClI 2 shows an exciting half-metallic character with a wide half-metallic gap of 0.4 eV. The ground state favors ferromagnetic coupling with a Curie temperature T c of 21 K. The half-metallicity with a FM ground state is further achieved by the application of an external strain and by the combined effects of the strain and the electric field. A phase transition from a half-metallic → semiconductor → metal was further observed under different stimuli with an antiferromagnetic ground state. At E z = 7.5 V/nm and in the presence of η = 5 % strain, the calculated T c is estimated at 35 K, which shows a 67% increment than the T c observed in the unstrained condition. The fascinating and unique properties suggest that VClI 2 is a promising two-dimensional ferromagnetic half-metal, which can be useful for applications in future memory devices to enrich the 2D magnetic materials library. [ABSTRACT FROM AUTHOR]

NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of <4 cm−1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes. [ABSTRACT FROM AUTHOR]

The band alignments of two candidate dielectrics for ScAlN, namely, SiO2 and Al2O2, were obtained by x-ray photoelectron spectroscopy. We compared the effect of deposition method on the valence band offsets of both sputtered and atomic layer deposition films of SiO2 and Al2O3 on Sc0.27Al0.73 N (bandgap 5.1 eV) films. The band alignments are type I (straddled gap) for SiO2 and type II (staggered gap) for Al2O3. The deposition methods make a large difference in relative valence band offsets, in the range 0.4–0.5 eV for both SiO2 and Al2O3. The absolute valence band offsets were 2.1 or 2.6 eV for SiO2 and 1.5 or 1.9 eV for Al2O3 on ScAlN. Conduction band offsets derived from these valence band offsets, and the measured bandgaps were then in the range 1.0–1.1 eV for SiO2 and 0.30–0.70 eV for Al2O3. These latter differences can be partially ascribed to changes in bandgap for the case of SiO2 deposited by the two different methods, but not for Al2O3, where the bandgap as independent of deposition method. Since both dielectrics can be selectively removed from ScAlN, they are promising as gate dielectrics for transistor structures. [ABSTRACT FROM AUTHOR]

Micro-fabricated vapor cells have applications in a number of emerging quantum technology-based devices including miniaturized atomic magnetometers, atomic clocks, and frequency references for laser systems. Increasing the cell optical path length (OPL) and smallest cell dimension are normally desirable to increase the signal to noise ratio (SNR) and minimize the de-polarization rate due to collisions between atomic or molecular species and the cell walls. This paper presents a fully wafer-level scalable fabrication process to manufacture vapor cells with dimensions approaching those of glass-blown cells. The fabrication process is described, and spectroscopic measurements (optical absorption and magnetic resonance) are reported. A magnetic resonance linewidth of 350 Hz is demonstrated, and this is the smallest linewidth reported to date for a micro-fabricated vapor cell. [ABSTRACT FROM AUTHOR]

We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics. [ABSTRACT FROM AUTHOR]

A new tri-axial pressure-based constitutive expression has been found using Cauchy's stress tensor. This stress state emphasizes pressure and shear stress. The description is a pressure plus an effective shear stress allowing for a constitutive law based on atomic solid-state phase changes in crystalline cells due to pressure plus shear-based dislocation motion commonly associated with plasticity. Pressure has a new role in the material's constitutive response as it is separated from plasticity. The thermo-mechanical system describes third-order Gibbs' expressions without specific volume restrictions placed upon the material. Isothermally, the ratio of heat to shear work in elastic copper is shown to approach zero at a very low temperature and become larger than one as temperature approaches melting. Wave compression models investigated are elastic and plastic: in fully elastic materials, the planar wave is restricted by Poisson's effect although plastic shear changes this constraint. Plastic deformation, dominated by dissipative shear stresses in uniaxial strain, heats the material while excluding phase changes from hydrostatic pressures. The material properties per se across Hugoniot shocks are described with entropy concepts. Shock waves are exceedingly complex since the constitutive laws are linked at extreme temperatures, pressures, and shear stresses. Isothermal, isentropic, isochoric, and iso-shear conditions are used throughout with Jacobian algebra. [ABSTRACT FROM AUTHOR]

The goal of this work is to investigate the effect of varying phase fractions on the overall spall strength and damage behavior of a material. Specifically, two plain carbon, ferrite–pearlite steels (1045 and A283) were subjected to spall recovery experiments to investigate the effect of pearlite fraction on spall strength and total damage. The A283 (20% pearlite) alloy exhibited a higher Hugoniot elastic limit and spall strength compared with 1045 (60% pearlite). Discontinuous and continuous yielding behaviors were observed at quasi-static and dynamic rates for A283 and 1045, respectively. The yielding behavior was connected to pearlite fraction and the prevalence of dislocation-emitting, ferrite/cementite interfaces. Postmortem characterization revealed cementite lamellae cracking within pearlite of 1045, suggesting that pearlite reduces spall strength by providing low-energy damage nucleation sites. The rate of damage growth and coalescence was similar between the two alloys; however, 1045 exhibited more continuous cracks than A283, which exhibited a greater prevalence of discrete voids. [ABSTRACT FROM AUTHOR]

While microalloying of metallic glasses (MGs) using hydrogen emerged a few years ago, the underlying mechanism of how hydrogen microalloying influences mechanical behaviors is currently still under debate. Herein, we perform atomistic simulations to investigate the effect of hydrogen microalloying on the mechanical profiles of MGs. The mitigation of strain localization accompanied with plenty of shear transformation zones (STZs) is exhibited in H-alloyed MGs and becomes more significant with the increase of H content. The addition of hydrogen induces a loose atomic structure with fertile liquid-like regions and abundant free volume, which triggers more STZ events and the softening behavior. Furthermore, hydrogen doping lowers the STZ activation energy barrier, which is verified by a theoretical model based on the concept of energetic criterion. Our work provides some new insight on how to tune the local packing of MGs and further alter the deformation behavior. [ABSTRACT FROM AUTHOR]

Sputter deposition of B 4 C films with tailored physical properties remains a challenge. Here, we systematically study how substrate temperature influences the properties of B 4 C films deposited by direct current magnetron sputtering onto planar substrates held at temperatures in the range of 100 − 510 ° C. Results show that all films are amorphous stoichiometric B 4 C , with low O content of ∼ 1 at. %. Films deposited onto substrates at 100 ° C exhibit high compressive residual stress and decreased mechanical properties. For elevated substrate temperatures in the range of 180 − 510 ° C , film mass density, surface roughness, Young's modulus, and hardness are weakly dependent on substrate temperature. However, in this temperature range, an increase in substrate temperature leads to larger residual compressive stress accompanied by a corresponding reduction in the concentration of nanoscale inhomogeneities. At least for the landing atom ballistics conditions studied here, a substrate temperature range of ∼ 185 − 250 ° C is optimum for growing films with near-zero intrinsic residual stress. The overall weak substrate temperature dependence of film properties revealed in this work is favorable for the development of a robust deposition process, particularly for the case of deposition onto non-planar substrates where temperature control is often challenging. [ABSTRACT FROM AUTHOR]

Au-coated Fe nanoparticles have been prepared by using a reverse micelle method through reduction of an aqueous solution. Characterizations have been carried out over time to probe the oxidation of Fe. Immediately after synthesis, the samples exhibit metallic conduction and a negative magnetoresistance, consistent with the presence of alpha-Fe. The temperature dependence of magnetization displays a maximum at a blocking temperature of around 150 K. After a period of 1 month, the samples exhibit insulating behavior, indicating the oxidation of the Fe core. Mossbauer spectroscopy indicates the presence of an alpha-Fe component and a broad distribution of local environments. (C) 2004 American Institute of Physics.

The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm−2 were studied. The carrier removal rates were ∼100 cm−1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5–10 × 1014 cm−2), the removal rate was ∼400 cm−1 for donor concentrations of 3 × 1016 cm−3 and ∼100 cm−1 for concentrations of <1016 cm−3. These removal rates were in stark contrast with modeling results that predicted the introduction rates of vacancies to be two orders of magnitude higher for 20 MeV protons. Measurements of deep electron and hole traps densities by deep level transient spectroscopy with electrical or optical injection (DLTS or ODLTS), and capacitance–voltage profiling under monochromatic light illumination showed that the 1 GeV proton irradiation resulted in the introduction of deep donors E2*(Ec-0.75 eV) and E3 (Ec-1 eV) and deep acceptors with optical ionization threshold near 2.3 eV producing a feature near 250 K in ODLTS and 3.1 eV with related ODLTS feature near 450 K. The total concentration of all deep traps was much lower than that necessary to explain the observed decrease in net donor density upon irradiation. The donor densities showed a nonuniform distribution in proton irradiated films with the concentration greatly decreased toward the surface. Possible reasons for the observed performance are discussed. [ABSTRACT FROM AUTHOR]

Gold-tantalum alloy films are of interest for biomedical and magnetically-assisted inertial confinement fusion applications. Here, we systematically study the effects of substrate tilt (0 ° – 80 °) and negative substrate bias (0–100 V) on properties of ≲ 3- μ m-thick films deposited by high-power impulse magnetron sputtering (HiPIMS) from a Au–Ta alloy target (with 80 at. % of Ta). Results reveal that, for all the substrate bias values studied, an increase in substrate tilt leads to a monotonic decrease in film thickness, density, residual compressive stress, and electrical conductivity. Larger substrate bias favors the formation of a body-centered cubic phase, with films exhibiting lower column tilt and higher density, electrical conductivity, and residual compressive stress. These changes are attributed to metal atom ionization effects, based on the lack of correlation with distributions of landing energies and incident angles of depositing species as calculated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. By varying substrate tilt and bias in HiPIMS deposition, properties of Au–Ta alloy films can be controlled in a very wide range, including residual stress from − 2 to + 0.5 GPa, density from 12 to 17 g/ cm 3 , and the electrical resistivity from 50 to 4500 μ Ω cm, enabling optimum deposition conditions to be selected for specific applications. [ABSTRACT FROM AUTHOR]

Many applications of boron carbide ( B 4 C) films entail deposition on non-planar substrates, necessitating a better understanding of oblique angle deposition phenomena. Here, we systematically study the effect of substrate tilt on properties of B 4 C films with thicknesses up to 10 μ m deposited by direct current magnetron sputtering. Results show that all films are amorphous and columnar with an average column width of ∼ 100 nm, independent of substrate tilt. Column tilt angles are limited to ∼ 20 ° even for substrate tilt of 80 °. Film density, residual stress, and the refractive index weakly (within ≲ 20 %) depend on substrate tilt. Oxygen impurities bond preferentially with carbon atoms in inter-columnar regions. Substrate tilt has a major effect on mechanical properties that decrease by ∼ 50 % , suggesting weak interconnection between nano-columns. Implications of these observations for the deposition onto non-planar substrates are discussed. [ABSTRACT FROM AUTHOR]

Gate-defined quantum dots benefit from the use of small grain size metals for gate materials because they aid in shrinking the device dimensions. However, it is not clear what differences arise with respect to process-induced defect densities and inhomogeneous strain. Here, we present measurements of fixed charge, Q f ; interface trap density, D i t ; the intrinsic film stress, σ ; and the coefficient of thermal expansion, α , as a function of forming gas anneal temperature for Al, Ti/Pd, and Ti/Pt gates. We show that D i t is minimized at an anneal temperature of 350 ° C for all materials, but Ti/Pd and Ti/Pt have higher Q f and D i t compared to Al. In addition, σ and α increase with anneal temperature for all three metals with α larger than the bulk value. These results indicate that there is a trade-off between minimizing defects and minimizing the impact of strain in quantum device fabrication. [ABSTRACT FROM AUTHOR]

The interaction of shock waves with non-planar free surfaces can cause atoms to eject from the surface, leading to the formation of ejecta. These non-planarities in the free surface can occur due to machining of the free surface or can be induced in the shock wave itself due to the presence of heterogeneities in the material. Both cases lead to the formation of ejecta. While the effect of machining on ejecta has been well studied, the latter has not been a topic of significant investigations. In this work, molecular dynamics simulations are used to systematically investigate the effect of size and concentration of He bubbles in Cu with planar free surfaces on ejecta production. It is shown that the presence of defects leads to the formation of non-planarity in the shock wave itself producing ejecta as the front reaches the flat free surface. The cluster size and velocity of ejected particles greatly exceeds that of pure Cu; the radius, density, and nature of the helium-filled voids alter the mass, velocity, and size distribution of the ejected matter. [ABSTRACT FROM AUTHOR]

Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast, all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics, and dynamical behavior. In this Perspective, we discuss skyrmionics in the context of the present-day solid-state memory landscape and show how their size, stability, and mobility can be controlled by material engineering, as well as how they can be nucleated and detected. Ferrimagnets near their compensation points are promising candidates for this application, leading to a detailed exploration of amorphous CoGd as well as the study of emergent materials such as Mn 4 N and inverse Heusler alloys. Along with material properties, geometrical parameters such as film thickness, defect density, and notches can be used to tune skyrmion properties, such as their size and stability. Topology, however, can be a double-edged sword, especially for isolated metastable skyrmions, as it brings stability at the cost of additional damping and deflective Magnus forces compared to domain walls. Skyrmion deformation in response to forces also makes them intrinsically slower than domain walls. We explore potential analog applications of skyrmions, including temporal memory at low density—one skyrmion per racetrack—that capitalizes on their near ballistic current–velocity relation to map temporal data to spatial data and decorrelators for stochastic computing at a higher density that capitalizes on their interactions. We summarize the main challenges of achieving a skyrmionics technology, including maintaining positional stability with very high accuracy and electrical readout, especially for small ferrimagnetic skyrmions, deterministic nucleation, and annihilation and overall integration with digital circuits with the associated circuit overhead. [ABSTRACT FROM AUTHOR]

Progress in computing architectures is approaching a paradigm shift: traditional computing based on digital complementary metal-oxide semiconductor technology is nearing physical limits in terms of miniaturization, speed, and, especially, power consumption. Consequently, alternative approaches are under investigation. One of the most promising is based on a "brain-like" or neuromorphic computation scheme. Another approach is quantum computing using photons. Both of these approaches can be realized using silicon photonics, and at the heart of both technologies is an efficient, ultra-low power broad band optical modulator. As silicon modulators suffer from relatively high power consumption, materials other than silicon itself have to be considered for the modulator. In this Perspective, we present our view on such materials. We focus on oxides showing a strong linear electro-optic effect that can also be integrated with Si, thus capitalizing on new materials to enable the devices and circuit architectures that exploit shifting computational machine learning paradigms, while leveraging current manufacturing infrastructure. This is expected to result in a new generation of computers that consume less power and possess a larger bandwidth. [ABSTRACT FROM AUTHOR]

The effects of 20 MeV proton irradiation with fluences of 5 × 1014 and 1015 p/cm2 on electrical properties of lightly Sn doped n-type (net donor concentration 3 × 1017 cm−3) bulk β-Ga2O3 samples with (010) and (−201) orientation were studied. Proton irradiation decreases the net donor density with a removal rate close to 200 cm−1 for both orientations and similar to the electron removal rates in lightly Si doped β-Ga2O3 epilayers. The main deep electron traps introduced in the β-Ga2O3 crystals of both orientations are near Ec−0.45 eV, while in Si doped films, the dominant centers were the so-called E2* (Ec−0.75 eV) and E3 (Ec−0.1 eV) traps. Deep acceptor spectra in our bulk –Ga2O3(Sn) crystals were dominated by the well-known centers with an optical ionization energy of near 2.3 eV, often attributed to split Ga vacancies. These deep acceptors are present in a higher concentration and are introduced by protons at a higher rate for the (010) orientation. Another important difference between the two orientations is the introduction in the surface region (∼0.1 μm from the surface) of the (010) of a very high density of deep acceptors with a level near Ec−0.27 eV, not observed in high densities in the (−201) orientation or in Si doped epitaxial layers. The presence of these traps gives rise to a very pronounced hysteresis in the low temperature forward current–voltage characteristics of the (010) samples. These results are yet another indication of a significant impact of the orientation of the β-Ga2O3 crystals on their properties, in this case, after proton irradiation. [ABSTRACT FROM AUTHOR]

Molecular dynamics (MD) simulations are performed to investigate the failure behavior of Al/Al, Al/Fe, and Al/AlFe bi-layers under high strain-rate shock loading. Additional simulations are performed to invesigate solely the tensile response of these systems and to isolate the effects of loading history on damage and failure. Specifically, the compression stage of the shock is excluded from the tensile simulations. This work shows that local structure variation, including the introduction of serrations, plays different roles in controlling damage nucleation depending on the specific loading condition. Under shock loading, the stress for void nucleation and the resulting void distribution is insensitive to an interface structure, whereas under pure tensile loading, the opposite is true, even though the strain rate is comparable. The above difference can be explained based on the corresponding change in the total deformation prior to damage nucleation under shock loading, which is missing from the pure tensile loading. Therefore, it is concluded that whether local interface structure matters under high strain-rate loading depends on the specific loading history and the stress state: the local structure variation matters only when it alters the deformation behavior, and subsequently, damage nucleation and evolution. [ABSTRACT FROM AUTHOR]

Quasi-isentropic (ramp) compression is now a well-established experimental method and so are the analysis techniques to give Lagrangian sound speed, pressure, and density along the sample material's isentrope. A shock followed by ramp compression is a natural extension to investigate, for example, shock melt and refreeze on compression, or isentropes of states off the Hugoniot or principal isentrope. In practice, graded-density impactors produce initial shocks, compression by shaped laser pulses may be unable to produce a smooth pressure increase from zero, and incidental perturbations on the drive pulse may also give rise to shocks, so robust shock-ramp analysis methods will be needed. Appropriate analysis methods are needed for shock-ramp experiments, based on those for quasi-isentropic compression, and these require validation. This paper describes three different analyses of a shock-ramp test problem, including an assessment of their estimated errors. The methods tested were based on hydrodynamic characteristics or integration backward in space. All methods gave the known Lagrangian sound speed to within ∼1%, and pressure and volume to within less than 2% and 1%, demonstrating that the analysis methods of isentropic compression experiments can be confidently extended to the analysis of shock and ramp compression. [ABSTRACT FROM AUTHOR]

Exploring the thickness-dependent electronic properties of ultrathin transition metal dichalcogenides is crucial for novel optoelectronic devices. Particularly important is experimental information regarding the bandgap width. This information is scarce and often inconsistent among the several measurement techniques that were employed for this task, such as optical absorption, scanning tunneling spectroscopy, and photoconductivity. Here, we present photoconductivity measurements in large-area synthetic MoS2 and WS2 films (one to five monolayers and the bulk crystal) grown on insulating layers (SiO2, Al2O3, or HfO2). The excitonic peaks of MoS2 and WS2 were detected in both the photocapacitor and traditional in-plane geometries. Their contribution to the photoconductivity is explained by the electric field-assisted dissociation mechanism. We have separated the excitonic and free carrier components in the photocurrent spectra and extracted the direct and indirect bandgaps using the Tauc plot, revealing their dependencies on the number of monolayers. [ABSTRACT FROM AUTHOR]

Strain engineered performance enhancement in SiGe channels for p-MOSFETs is one of the main drivers for the development of microelectronic technologies. Thus, there is a need for precise and accurate strain mapping techniques with small beams. Scanning X-Ray Diffraction Microscopy (SXDM) is a versatile tool that allows measuring quantitative strain maps on islands as thin as 13 nm quickly. From the high velocity and robustness of the technique, statistical information can be extracted for a large number of individual islands of different sizes. In this paper, we used the advantages of SXDM to demonstrate the effectiveness of the condensation method used to grow ultra-thin layers of strained SiGe and to determine their relaxation lengths at patterned interfaces. [ABSTRACT FROM AUTHOR]

The Ar( 3 P 2) metastable density in the effluent of the cold atmospheric pressure plasma jet kINPen was investigated as a function of the feed gas humidity, the gas curtain composition, and the distance from the nozzle by means of laser atomic absorption spectroscopy. The filamentary character of the plasma jet was considered as the absorption signals are from single individual events. From the effective lifetime, the quenching coefficient for Ar( 3 P 2) by water was determined. A maximum Ar( 3 P 2) density of (6.0 ± 0.7) × 10 13 cm − 3 was obtained close to the nozzle for a feed gas humidity of 20 ppm. The densities near the nozzle decreased inversely proportional to the water content in the feed gas leveling off at approximately 1 × 10 13 cm − 3 , independently from the gas curtain composition. With the addition of water to the feed gas, the excitation dynamics changed, and the production and lifetime of Ar( 3 P 2) was reduced. The impact of Ar( 3 P 2) on the reactive species composition in the effluent was found to be smaller than within the plasma zone inside the plasma jet device. [ABSTRACT FROM AUTHOR]

Recent studies have highlighted the collective rotations of corner-shared oxygen octahedra in ABO3 functional perovskite oxides. However, experimental methods that allow direct measurements of oxygen octahedra, especially for the multilayer containing different types of oxygen octahedral rotations in each layer, are still rare. In this report, the correlation between oxygen octahedral rotation and cation-lattice symmetry is discussed by studying the interface-engineered perovskite La2/3Sr1/3MnO3 layers. The out-of-phase octahedral rotations remove the orthogonality between corresponding axes of the cation lattice, leading to the asymmetric diffraction pattern recorded by the reciprocal space mapping. More importantly, in the La2/3Sr1/3MnO3-multilayer heterostructure, the reciprocal space mapping can identify different octahedral rotations for each La2/3Sr1/3MnO3 layer, explaining the appearance of multiple Curie temperatures and coercive fields. Our results reveal the new understanding of the old reciprocal space mapping-based technique, based on the correlation between oxygen octahedral rotation and cation-lattice symmetry. The application of reciprocal space mapping to the La2/3Sr1/3MnO3-multilayers not only showcases the advantage of this technique but also extends our understanding of oxygen octahedral rotation to the more complicated oxide heterostructures. [ABSTRACT FROM AUTHOR]

Monolithic integration of lattice-mismatched semiconductor materials opens up access to a wide range of bandgaps and new device functionalities. However, it is inevitably accompanied by defect formation. A thorough analysis of how these defects propagate and interact with interfaces is critical to understanding their effects on device parameters. Here, we present a comprehensive study of dislocation networks in the GaSb/GaAs heteroepitaxial system using transmission electron microscopy (TEM). Specifically, the sample analyzed is a GaSb film grown on GaAs using dislocation–reduction strategies such as interfacial misfit array formation and introduction of a dislocation filtering layer. Using various TEM techniques, it is shown that such an analysis can reveal important information on the dislocation behavior including filtering mechanism, types of dislocation reactions, and other interactions with interfaces. A novel method that enables plan-view imaging of deeply embedded interfaces using TEM and a demonstration of independent imaging of different dislocation types are also presented. While clearly effective in characterizing dislocation behavior in GaSb/GaAs, we believe that the methods outlined in this article can be extended to study other heteroepitaxial material systems. [ABSTRACT FROM AUTHOR]