1. In situ transport in alumina-based magnetic tunnel junctions during high-vacuum annealing.
- Author
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Hindmarch, A. T., Anderson, G. I. R., Marrows, C. H., and Hickey, B. J.
- Subjects
ALUMINUM oxide ,MAGNETISM ,ANNEALING of metals ,INTERFACES (Physical sciences) ,SPIN valves - Abstract
We have performed in situ transport measurements on CoFeB/AlO/Co spin-valve magnetic tunnel junctions during annealing up to 200 °C. For optimally oxidized junctions we observe a marked decrease in the parallel state junction resistance, which occurs at around 150 °C and continues throughout the anneal process until the temperature is reduced back below 150 °C. Spectroscopic measurements reveal a stronger bias dependence due to enhanced magnon-assisted tunneling, and show that features relating to weak fcc texture in the cobalt upper electrode fade after annealing at 200 °C. We attribute this to a possible amorphization of the cobalt electrode in close proximity to the barrier interface. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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