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We present photoreflectance (PR) and surface photovoltage spectroscopy (SPS) studies of GaAs1-xSbx/GaAs multiple quantum well structures with fundamental transition close to 1.3 μm. These two optical diagnostic tools are powerful supplementary techniques in the investigations of complicated quantum systems. PR gives detailed information about the heavy-holes related transitions, while SPS contains additional information concerning light-holes related ones. The comparison of experimental data and theoretical analysis based on the envelope function approximation, including strain and exciton binding energy, allows us to identify the observed PR and SPS features. The results point to the existence of weak type-I band alignment in samples being studied, and the Sb content dependent of conduction band offset is found to agree well with that reported by Wang et al. [Phys. Rev. B 70, 195339 (2004)]. [ABSTRACT FROM AUTHOR]

This work systematically investigates the influence of InAs growth conditions and superlattice parameters on the optical properties of InAs/GaAs quantum dot (QD) superlattice structures grown by molecular beam epitaxy. Using surface photovoltage spectroscopy, one directly obtains the absorption spectra up to the highest confined QD levels at room temperature. Based on photoluminescence measurements at different excitation wavelengths, a feature below the fundamental transition is attributed to the transition from uncoupled dots in the bottom layers. The QD transition energy shift was found to be correlated with material intermixing, driven by enhanced strain strength with the increase of layer number and the decrease of spacer thickness, and the growth rate of InAs. A blueshift observed in low growth rate samples is indicative of greatly enhanced intermixing. For QD superlattices grown at a relatively high deposition rate of InAs, the material intermixing effect is gradually enhanced with increasing layer numbers, which will compensate the electronically coupled effect and will prevent further energy shift toward the lower energy side. The absorption wavelengths in 10- and 30-period InAs/GaAs QD superlattices with higher growth rates are near 1.32 μm. The results suggest that these QD superlattice structures can be used as promising active media for long-wavelength QD lasers operating at room temperature. [ABSTRACT FROM AUTHOR]