Search

This paper reports on the observation of substantial rotation and reflection enhancements with thin magnetic films evaporated on the base of high index prisms with films of suitable index on only the air side of the magnetic thin film. Angles of incidence at the prism‐magnetic thin‐film interface were near the critical angle for total internal reflection. The magnetic film thickness and the thicknesses and indices of the dielectrics were obtained with the help of a computer program which calculated the reflection coefficients as well as the Kerr rotations and energy mode transfer. Enhancements of rsp up to a factor of 20 were obtained.

The problem of the generation of the coherent far ir radiation by a resonant parametric coupling between light waves is taken into consideration in the present paper. The equations of propagation of the interacting waves are given and the effect of the ir activity of the stimulated Raman active resonant mode on the dynamics of the wave interaction is considered. The experimental case of crystals and fluids as suitable media for achieving the effect is taken into account. At last, considerations on the resonant phase matching condition show that the achievement of the effect is not critical in general cases.

Electric and magnetic modes establish the basis of the localized spoof surface plasmons (LSSPs), both of which are transverse electric (TE) modes. In this paper, the concept of transverse magnetic (TM) modes of LSSPs is proposed, and the double-layer planar-circular-grating resonator is demonstrated to support the TM modes in addition to the TE modes. In numerical simulations, the TE and TM modes were excited by a plane wave and an aperture, respectively, and their resonant frequencies and electromagnetic field distributions were demonstrated to be different. The electric field of the TE mode is parallel to the grating, while the magnetic field of the TM mode is parallel to the grating. In experiments, multiple TE and TM LSSPs modes were excited by a magnetic coupler. The magnetic coupler can be rotated to distinguish the TM modes from the TE ones, which provides conclusive evidence of the existence of the TM modes. Compared with the TE LSSPs modes, the TM LSSPs modes have the advantages of high sensitivity to the distance between layers and high quality factors (Q-factors), which hold promise for providing improvements on compact applications of LSSPs. Based on the proposed concept, therefore, the classification standard of the LSSPs is expanded to make it more scientific and comprehensive.

Most of the photonic valley-Hall edge states were constructed by changing structures to break the spatial inversion symmetry, restricting the practical application potential. In this paper, we construct a tunable topological valley-Hall edge state based on the large optical Kerr effect. It is demonstrated that topological phase transition happens by engineering the intensity of the injected pump and that a valley-Hall edge state can be generated at the interface between two regions with different topological properties. In addition, eigenfrequency and transmission characteristics of the edge state as a function of applied pump intensity are investigated. The topological protected valley-dependent transmission is studied under non-uniform distributed pump intensity. This work may open a new path toward designing reconfigurable all-optical metadevices.

Cadmium zinc telluride (CZT) is an ideal material for room temperature nuclear radiation detection, but CZT crystals of high quality and low defects concentration are difficult to obtain. Therefore, in order to improve the performance of the CZT detector, the working conditions of the CZT detector could be appropriately changed to make the internal electric field of the CZT detector close to uniform distribution so as to improve the electron transport performance. In this paper, alpha induced transient charge analysis has been used to study the internal electric field of the CZT detector, and deep level defects in CZT were linked with internal electric field distribution. Based on the process, a variety of deep level defects on electron trapping and detrapping by changing the temperature, the output waveform change of charge sensitive preamplifier (the pulse height spectra for alpha radiation at different temperatures) was observed, and then the effects of deep level defects on electron mobility ( μe), electron transport time ( TR), the internal electric field, and the electron collection efficiency of the CZT detector were analyzed. The experimental results indicated that the influence of deep level defects was a main factor to the internal electric field in the range of −140 to 40 °C. As the temperature rises, the influence of these defects weakens, μe and electron collection efficiency both increase, and internal electric field distribution tends to be uniform. Moreover, with the further increasing temperature (−40 to 20 °C), μe decreased and internal electric field distribution became fluctuating, but electron collection efficiency was basically unchanged, which suggested that the influence of lattice vibration in the range of −40 to 20 °C turned to be the main factor. The above conclusions demonstrated that although the CZT detector has excellent room temperature detection ability, room temperature was not its optimal working temperature due to the influence of high concentration deep level defects. At −20 °C, the CZT detector presented the highest electron collection efficiency and maximum which limited the influence of deep level defects on electron transport, performing the optimal properties.

Semi-transparent photovoltaic devices for building integrated applications have the potential to provide simultaneous power generation and natural light penetration. CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) has been established as a mature technology for thin-film photovoltaics, however, its potential for Semi-Transparent Photovoltaics (STPV) is yet to be explored. In this paper, we present its carrier transport physics explaining the trend seen in recently published experiments. STPV requires deposition of films of only a few hundred nanometers to make them transparent and manifests several unique properties compared to a conventional thin-film solar cell. Our analysis shows that the short-circuit current, Jsc is dominated by carriers generated in the depletion region, making it nearly independent of bulk and back-surface recombination. The bulk recombination, which limits the open-circuit voltage Voc, appears to be higher than usual attributable to numerous grain boundaries. When the absorber layer is reduced below 500 nm, grain size reduces resulting in more grain boundaries and higher resistance. This produces an inverse relationship between series resistance and absorber thickness. We also present a thickness-dependent model of shunt resistance showing its impact in these ultra-thin devices. For various scenarios of bulk and interface recombinations, shunt and series resistances, AVT and composition of CuIn$_{1-x}$Ga$_x$Se$_2$, we project the efficiency limit which - for most practical cases - is found to be $\leq$10% for AVT $\geq$25%.

This paper presents systematic modeling and performance analyses of a 340-GHz dual-polarized antenna-coupled single-sideband (SSB) high-Tc superconducting (HTS) mixer for terahertz (THz) communication systems. The mixer features a fully monolithic-integrated circuit layout, which enables both sensitive heterodyne detection and high image rejection by appropriate polarization-manipulating operation. To predict the comprehensive performance of such a HTS mixer with relatively complicated network architecture and polarization relationships, an innovative modified three-port modeling approach is presented and developed by theoretical derivations. Using the measured Josephson junction parameters of our previous experimentally demonstrated HTS mixer module at the same band, the best conversion gain and SSB noise temperature of the presented mixer are predicted to be around −5 dB and 1200 K at the operating temperature of 40 K, respectively. In addition, the mixer exhibits a flat frequency response over a wide intermediate-frequency range from 15 to 25 GHz and high image rejection of more than 17 dB over the radio frequency operation range. The SSB HTS Josephson mixer will be useful for THz wireless communication applications.

GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent transport characteristics and ability to generate free carriers via polarization doping, GaN is expected to be an important technology for ultra-low temperature and quantum computing electronics. Finally, given the increasing cost of hardware prototyping of new devices and circuits, the use of high-fidelity device models and data-driven modeling approaches for technology-circuit co-design are projected to be the trends of the future. In this regard, physically inspired, mathematically robust, less computationally taxing, and predictive modeling approaches are indispensable. With all these and future efforts, we envision GaN to become the next Si for electronics.

Structure-engineered silicon exhibits a wealth of unique optical properties below its bandgap, which holds promise for mid-infrared and terahertz applications such as photodetection, thermophotovoltaics, radiative cooling, and spectroscopy. In this paper, we investigate enhancement mechanisms of sub-bandgap absorption of black silicon fabricated into periodic pyramids. Our measurements indicate that the pyramid structure leads to an enhanced broadband absorption in the wavelength region from 1.5 to 13.07 μm with an efficiency of over 80%. The broadband absorption enhancement is shown to originate from the Rayleigh–Wood anomaly, localized magnetic plasmonic resonance, and graded-index effect, which together facilitate the interaction between light and free-carriers in silicon. These results are helpful for understanding the interaction between light and black silicon.

Naturally occurring materials with hyperbolic optical properties are attracting considerable interest due to their ability to confine light in small volumes and their resulting potential for applications in photonics. This paper uses a first-principles theoretical approach without adjustable parameters to investigate the hyperbolic optical properties of bulk calcite (CaCO3). This material exhibits natural hyperbolic behavior within its Reststrahlen bands at 1403–1552 and 864–887 cm−1. The calculated results are shown to be in good agreement with our reflectance data obtained from frequency- and polarization-dependent measurements. These results show that calcite is an attractive natural hyperbolic material; in addition, it has the advantage of low losses and is available commercially in a variety of crystal orientations.

Two-dimensional black phosphorene (BP) has attracted much interest for application in electronic devices. Contacts between BP and metal electrodes are critical components of BP-based devices and can dramatically affect device performances. In this paper, we adopted first-principles calculations to explore binding energies, electronic structures, and potential distribution for interface systems of Al-, Au-, Cu-, Ni-, and Ti-monolayer BP in surface contact and edge contact (EC) types. Moreover, we also used density functional theoretical coupled with the nonequilibrium Green’s function method to investigate contact resistances and Schottky barrier heights (SBHs) for transport systems of monolayer BP with Al, Au, Cu, Ni, and Ti electrodes. Our calculated results indicate that the contact type between BP and metals may greatly affect electrical properties of BP–metal contacts. Changing contact type between metal electrodes and BP channel can change the type of Schottky barrier of metal–BP contacts. The contact barrier of metal–BP depends on the metal material. Selecting an appropriate contact type and metal can effectively regulate the contact barrier of metal–BP. Specifically exciting, our estimated lateral SBHs for the Ni–BP system in EC-type agree well with the experimental results. We have provided a new strategy on choosing an appropriate contact type to achieve low contact resistance for the metal–BP interface.

In SiN/AlGaN/GaN heterostructures, the evaluation of interface charges at the SiN/AlGaN and AlGaN/GaN interfaces is crucial since they both rule the formation of the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface. In this paper, we conducted a thorough analysis of the gate-to-channel capacitance CGC(VG) and of the drain current ID(VG) over a gate voltage VG range enabling the depletion of the 2DEG and the formation of the electron channel at the SiN/AlGaN interface. This work includes the establishment of analytical equations for VTH1 (formation of the 2DEG) and VTH2 (formation of the electron channel at the SiN/AlGaN interface) as a function of interface charges and of the p-doping below the 2DEG. The inclusion of the p-doped layer below the 2DEG and the use we made of VTH2 have not been reported in previous studies. Our analysis allows a reliable estimate of the interface charges at the AlxGa1−xN/GaN and SiN/AlxGa1−xN interfaces for various Al concentrations x as well as to demonstrate that the polarization charge at the SiN/AlxGa1−xN interface is compensated, which confirms previous findings. Moreover, this compensation is found to be induced by the AlGaN layer rather than the SiN layer.

In this paper, we investigate the formation of a photonic terajet and tune its optical properties using the high-resolution finite-difference time-domain method. A Dirac semimetal is coated onto the surface of a dielectric rod and illuminated with an incident plane wave. The refractive index of the Dirac semimetal can be modulated by changing its Fermi energy. It was demonstrated that the presence of the Dirac semimetal layer can significantly affect the characteristics of the photonic terajet, such as focal distance, intensity, full-width at half maximum, and length.

Since their initial demonstration in 1995, light-emitting electrochemical cells (LECs) have received attention due to potential advantages over traditional polymer optoelectronic devices. A standard LEC consists of two electrodes surrounding an active layer that contains polymer and mobile ions. When a bias is applied, the ions separate and move toward the electrodes, creating a reversible p–n junction analog. Immobilizing the ions after ion dissociation using one of several demonstrated methods to create a “fixed-junction LEC” allows the device to produce a significant photovoltaic response. Recently, our group demonstrated chemically fixed junction LECs using a polymerizable ionic liquid (ATOA-AS) that conferred important advantages over first-generation chemically fixed junction devices, including improved phase compatibility and turn-on time. Early tests showed improvements in the performance of these devices over the first chemically fixed junctions in terms of light-emitting properties. However, their photovoltaic behavior has not been previously investigated. In this paper, we demonstrate photovoltaic behavior in chemically fixed junction LECs based on the polymerizable ionic liquid ATOA-AS as the ion source. While further improvements in the photovoltaic performance of fixed-junction devices still need to be made before they are considered a commercially viable technology, we find that the devices reported here compare well to other single-layer polymer homojunction solar cells and demonstrate an exceptionally high VOC (>1.8 V for some configurations). We also explore the effects that changes to various aspects of device composition and testing procedures have on device performance.

Recently developed field of all-dielectric nanophotonics allowed for the observation of the Kerker effect, i.e., unidirectional scattering of electromagnetic radiation by a dielectric particle in optical frequency range. In this paper, we consider the analogue of this effect for localized waves which manifests itself as an interference of the evanescent tails of the optical waveguide modes. Specifically, we design a discrete nanophotonic waveguide that supports two degenerate modes characterized by different symmetries with respect to the plane that contains the waveguide axis, leading to an asymmetric field distribution of the propagating wave under appropriate excitation conditions. We perform numerical simulations of the excitation of such a waveguide with a point dipole and predict that its polarization state can be encoded into the field pattern of the signal propagating along the waveguide and transferred for relatively large distances. We also propose a planar directional coupler that consists of a developed discrete waveguide and conventional single-mode dielectric waveguides that exploit the interference effect for routing single photons generated by circularly polarized quantum emitters.

Table-top neutron/x-ray sources are of great interest for uses in neutron activation analyses, in neutron/x-ray radiography, and also in medical applications. Inertial electrostatic confinement fusion (IECF) is a multiple neutron source that can emit neutrons, protons, x rays, etc., as basic products when operated in both continuous and pulsed modes. In this work, D-D neutrons are produced in the steady-state mode using a cylindrical IECF device. The neutron production rate has been optimized by using cathodes having different dimensions and geometrical transparencies. The maximum neutron production rate is found to be approaching 107n/s, using a cathode having eight grid wires and a diameter of 3 cm. The neutrons are successfully used for neutron activation analysis of materials containing explosive elements. X-ray spectrum having a wide range of photon energies (30–70 keV) has been detected from this device while operated in the continuous mode. X-ray radiography of high density objects has also been performed and reported for the first time using the cylindrical IECF source with negative polarity of the central grid in this paper.

Applying atmospheric plasma etching to the surface texturing process of silicon solar cells is a promising strategy for the current photovoltaic manufacturing industry due to its low equipment cost and good fabrication flexibility. This paper investigates the morphology evolution of the silicon surface etched by an Ar/CF4/O2 plasma and the associated optical properties. Results show that the generation of the light trapping structure on the polished silicon surface can be divided into two stages on the basis of the multi-scale morphological images and the quantitative evaluation of roughness parameters. The initial roughening stage mainly involves the formation of high-frequency nanoroughness that can act as an effective medium layer with a gradual refractive index. The resulting optical medium effect can reduce the surface reflectance within a broad range of wavelengths. At the next texturing stage, the low-frequency and high-amplitude microroughness dominates the morphology of the etched silicon surface. It features inverted parabolic structures with a high aspect ratio, which can cause multiple reflections of the incident light. The optical medium effect resulting from the nanoroughness is also inherited. Thus, the anti-reflectance property of the etched silicon surface is greatly improved. This work demonstrates that the light trapping properties of silicon surface etched by atmospheric plasma jet are a synergy of the optical medium effect and geometrical optics. Insights into the morphology evolution and optical properties of the textured surfaces are important for developing a new surface texturing process of silicon solar cells.

Ultra-wide bandgap semiconductors with exceptional advantages have potential use in ultrahigh power, ultrahigh frequency devices, and other applications. In this paper, a series of high-quality Nb-doped ZrxSn1−xO2 (Nb:ZrxSn1−xO2) alloy epitaxial films were prepared on c-plane sapphire substrates by pulsed laser deposition. A greater proportion of Zr successfully widened the optical bandgap of SnO2 up to 4.70 from 4.28 eV. Interestingly, although Nb is a common n-type dopant for SnO2, the conductivity of Nb:ZrxSn1−xO2 decreased with increasing Zr content. The greater activation energy Ea of the films with more Zr contents was determined by variable resistance measurements and rationalized by the first-principles calculations. The higher Zr content leads to a lower conductivity in the films. This is because the electronegativity of Zr is smaller than that of Sn and Nb, making it easier for O to attract electrons from Zr and Nb donating less electrons with increasing Zr content. It leads to more electrons filling the Nb 4d orbital and brings the donor level further down from the conduction band minimum. However, Nb:ZrxSn1−xO2 with a low Zr content of x = 0.1 has good electrical conductivity, with a carrier density of 5.426 × 1020 cm−3 and a resistivity of 7.89 × 10−3 Ω cm, and simultaneously a broadened bandgap of 4.4 eV. Therefore, Nb can act as an effective n-type dopant for ZrxSn1−xO2 with proper Zr content, making Nb-doped ZrxSn1−xO2 promising for developing ultraviolet-transparent conductive electrodes.

Investigation of the polarization switching mechanism in ferroelectric hafnium zirconium oxide (HZO) film is of great importance for developing high-quality ferroelectric memory devices. Recently, several works have been reported to describe the switching process of polycrystalline HZO film using the inhomogeneous field mechanism (IFM) model. However, no report has recorded the effect of high pressure annealing (HPA) on the polarization switching process. In this paper, we have carried out a careful investigation on the switching properties of HZO capacitors annealed at 600 °C with various high pressure conditions (1, 50, and 200 atm) using the IFM model. As pressure increases to 200 atm, the ferroelectric properties were enhanced in the HZO films, and, as a result, highest remanent polarization (Pr of 24.5 μC/cm2) was observed when compared with 1 and 50 atm. Similarly, as HPA increases, the HZO capacitors showed a decrement of the coercive field, which significantly improved the switching properties. The time consumed for reversing 80% polarization was 113.1, 105.7, and 66.5 ns for the sample annealed at 1, 50, and 200 atm, respectively. From the IFM model, the smallest active field (2.997 MV/cm) and a uniform distribution of the local electric field (0.304) were observed at 200 atm. Furthermore, the characteristic time constant ( τ 0 ) showed a decreasing trend (34.7, 18.1, and 11.7 ps) with increasing HPA. The improved switching properties and detailed findings recorded in this study may be helpful for developing the ferroelectric hafnia based non-volatile memory applications.

Gaseous detectors are widely used in high energy physics, and are attractive choices in tracking systems for cosmic muon imaging, also called muography. Such detectors offer high resolution and high efficiency at reasonable cost for large sizes, however, one of the drawbacks is that the gaseous detection medium must be prevented from contamination by outside air or internal outgassing. Standard systems work with a constant gas flow, leading to regular maintenance in the form of gas cylinder changes, which can be an issue for remote field applications. In this paper we discuss the practical possibilities to reduce gas consumption of an outdoor gaseous tracker, where particularly the gas density change from daily temperature cycling limits the input flow. Such "breathing" effect can be circumvented by well designed buffer volume, which must prevent external air contamination. A realistic MWPC tracking test system with 0.9 square meter area, total volume of 160 l, has been operated for 36 days with a flow of 3 l/day, confirming that the buffer volume, in this case a 50 m long and 10 l volume low diffusion tube, ensures sufficient gas quality. The key effects governing the gas flow dynamics, including diffusion and gas volume change, has been studied quantitatively, leading to practical design prescriptions., Comment: 20 pages, 12 figures. The following article has been submitted to Journal of Applied Physics under Manuscript #JAP21-AR-01969

In this paper, a refractive index (RI) sensor with superconducting photonic crystal in the terahertz regime is theoretically analyzed by the transfer matrix method. An asymmetric resonance cavity containing gradient thicknesses of the superconducting layer is employed to suppress the resonance absorption linewidth. We present the coupled wave theoretical model to give an optimization scheme for excellent sensing performance. The proposed sensing models can achieve an excellent single resonant peak when the temperature is over 80 K. When the incident angle varies between 50° and 70° in TE mode, the shift of a single resonant peak has a linear relationship with the incident angle. The simulation results report that the sensitivity and figure of merit in the optimal model can reach over 22.2 μm RIU−1 (RIU represents RI unit) and 265 at the ultralow temperature (85 K), respectively. Its performance indicators are dozens of times those of the traditional photonic crystal RI sensor. Our study provides theoretical guidance for the design of a low-temperature RI sensor with a high-performance indicator.

Using the transfer matrix method, the absorption, reflection, and nonreciprocity of the cylindrical photonic crystals (CPCs) consisting of graphene and two layers of ordinary medium cascaded by a periodic sequence and a Rudin–Shapiro quasiperiodic sequence are investigated under a large incidence angle of electromagnetic wave. By comparing the cascade of two periodic structures and the case of a single periodic structure, it is concluded that the structure proposed in this paper has better nonreciprocal phenomena and wider relative absorption bandwidth at a large incidence angle, reaching 162.2%, which is also much higher than the general planar photonic crystals. The absorption performance of this structure in TE and TM modes is compared at different angles and it is found that TM mode has a wider absorption bandwidth and has an ideal bandwidth in a large range of incident angle from 20° to 80°. Meanwhile, the optimum parameters of chemical potential and medium thickness are discussed, which can meet the requirements of large absorption bandwidth and significant nonreciprocity at a large incident angle. The CPCs embedded in graphene adopted in this paper are structures that have never been studied before. The electrical conductivity of graphene can be adjusted by the chemical potential, which can more conveniently realize many optical phenomena and provide reference and application values for optical sensing, optical filtering, and optical detection.

Dynamic control of probe absorption spectrum via vortex beams in multilevel systems has attracted much attention because it provides an avenue to observe unique transport properties. In this paper, we employ experimentally accessible parameters to flexibly control the probe absorption spectrum that shows vortex-induced transparency (VIT) and absorption (VIA) phenomena. Specifically, this system can be served as an optical switch while the vortex beams can act as the control knob, which has the ability to switch from a transparency dip to an absorption peak. Differing from a conventional electromagnetically induced transparency technique, our proposed scheme investigates VIT and VIA by tuning the orbital angular momentum of vortex beams in the resonance and non-resonance cases. Moreover, the collective feature caused by constructive or destructive interference is also studied via adjustable frequency detuning. Our results may provide an efficient approach to study similar phenomena in multilevel quantum systems driven by optical vortex beams.

This paper addresses the application of multimodal nonlinear optical (MNLO) microscopy to clinical research within the context of label-free non-invasive molecular imaging. Here, a compact MNLO microscope based on a laser scanning microscope, a femtosecond laser, a time-correlated single-photon counting system, and a photonic crystal fiber are introduced for biomedical applications. By integrating two-photon fluorescence, two-photon fluorescence lifetime imaging, second-harmonic generation, and coherent anti-Stokes Raman scattering microscopy, the proposed scheme provides profound insights into the physicochemical properties related to 3D molecular orientation distribution, inter- and intra-molecular interactions, and disease progression in biological systems and organs. The high peak power and the low average intensity of near-infrared laser pulses allow for deep-penetration imaging without compromising sample vitality. Linking nonlinear optical phenomena with time/spectral/polarization-resolved imaging also makes it possible to obtain multidimensional information to address complex biomedical questions.

In this paper, a vertical-aligned silicon nanowires (Si NWs) array has been synthesized and implemented to the Si NW-array-textured solar cells for photovoltaic application. The optical properties of a Si NWs array on both the plane and pyramid-array-textured substrates were examined in terms of optical reflection property. Less than 2% reflection ratio at 800 nm wavelength was achieved. Using leftover monocrystalline Si (c-Si) wafer (125×125 mm2), a 16.5% energy conversion efficiency, with 35.4% enhancement compared to the pyramid-array-textured c-Si solar cells, was made by the Si NW-array-textured solar cells due to their enhanced optical absorption characteristics. However, without SiNx passivation, the short circuit current reduced due to the increased surface recombination when using Si NWs array as surface texturing, indicating that an optimum surface passivation was prerequisite in high-efficiency Si NW-array-textured solar cells.

The use of stibnite (Sb2S3) as a light-harvesting material in thin film solar cells has received considerable research interest during the transition of the millennium. However, the use of perovskite diminished the research in the field, and the potential of antimony Chalcogenides [Sb2(S,Se)3] was not explored thoroughly. Although these materials also provide bandgap tuning like perovskite, by varying the composition of S and Se, it is not as popular as perovskite for the fabrication of solar cells mainly because of the low efficiency of the solar cells based on it. In this paper, we present a landscape of the functional role of various device parameters on the performance of Sb2(S,Se)3-based solar cells. For this purpose, we first calibrate the optoelectronic model used for simulation with the experimental results from the literature. The model is then subjected to parametric variations to explore the performance metrics for this class of solar cells. Our results show that despite the belief that the open circuit voltage is independent of contact layers’ doping in proper band-aligned carrier selective thin film solar cells, here we observe otherwise and the open circuit voltage is indeed dependent on the doping density of the contact layers. Using the detailed numerical simulation and analytical model, we further identify the performance optimization route for Sb2(S,Se)3-based thin film solar cells.

As the grating-based phase contrast imaging has drawn much attention in various scientific fields, there is an increasing demand for a compact imaging system with high efficiency in practical applications. In this paper, a compact imaging configuration by replacing the source grating in a conventional imaging system with a robust, easily-fabricated, and cost-effective x-ray polycapillary lens is proposed and its feasibility is examined using a full-scale Monte Carlo simulation. A typical x-ray spectrum for diagnostic mammography is adopted in the simulation. Under this spectrum, a new polycapillary lens is designed and optimized to meet the requirement of the imaging system. The phantom consists of polyethylene, cortical bone, and adipose tissue spheres of different sizes. An accurate phase image of the phantom is successfully reconstructed using an eight-step phase-stepping method. Excellent agreement of the phase shift and attenuation of the phantom is obtained between the simulation and the theoretical prediction. Compared with a conventional imaging system using a source grating at the same parameters, the imaging efficiency of our proposed system is improved 1.7 times, while its background visibility is reduced from 44.4 % to 12.4 %. Our results suggest the possibility of developing such a bench-top system for flexible phase contrast imaging applications.

A model for ultracapacitor capacitance and ion screening length based on semiconductor physics is presented in this paper. Screening length is related to capacitance as the plate-plate separation in a double-layer, and thus both are related to dissolved ion density in the electrolyte. Furthermore, this dissolved ion density can be expressed in terms of an effective bandgap assigned to the electrolyte/solvent pair. Therefore, by knowing the effective bandgap, we can explain the published experimental measurements of the dependence of capacitance and screening length on temperature. For electrolytes commonly used in ultracapacitor applications, the effective bandgap is estimated to be on the order of a few 100 meV.

Although titanium dioxide ( TiO 2) is a promising constituent of the metasurface operative in the visible, the experimental demonstration is limited so far because TiO 2 is intrinsically chemically/physically stable and is hard to be processed into nanostructures with high precision. In this paper, we develop a facile pathway to fabricate the TiO 2 metasurface via oxidation of Ti nanoparticle array that can be made by the conventional lift-off process. Under an optimized heat-treatment procedure in air, Ti nanoparticles are converted to TiO 2 nanoparticles with a size expansion predictable by the molar volume mismatch between Ti and TiO 2, while the global periodic arrangement is retained. We apply this technique to a Ti nanoparticle array fabricated on the phosphor plate of yttrium aluminum garnet doped with Ce 3 + (YAG:Ce) and demonstrate the directional outcoupling of emission through the metasurface. The photoluminescence from the YAG:Ce plate is directionally enhanced in the forward direction, as large as three times as much compared to that from the flat YAG:Ce plate without the metasurface. Because of the high transparency and lossless feature of TiO 2 in the visible, the present metasurface does not lower the total quantum yield of the system consisting of the YAG:Ce plate and the TiO 2 metasurface, which is beneficial for the solid-state-lighting application.

Cholesteric liquid crystal elastomers (CLCEs), which exhibit selective reflection derived from a helical molecular structure, are receiving a great deal of attention because they deform largely due to the cross-linked polymer chains. Reflection wavelength of a CLCE film can be tuned by mechanical stretching that induces a change in the helical pitch. However, stretch-induced reflection wavelength tuning has some issues such as a large load required and a limited tuning range. In this paper, reflection wavelength of a CLCE film is tuned facilely and widely by bending. Outward and inward bendings cause blue and red shifts, respectively. Bending–buckling load required for the reflection tuning is much lower than stretching one, which is proved experimentally and theoretically. By considering the bending behavior of materials, we can impose large strain on a CLCE film and tune reflection wavelength over 300 nm, which is almost the whole region of visible light. This wideband reflection wavelength tuning by low-load bending leads to expanding applications of CLCEs.

SrTiO3 is a wide bandgap cubic perovskite oxide and displays many exotic properties, i.e., transparent conductivity, photocatalysis, metallicity, ferroelectricity, superconductivity, colossal magnetoresistance, two-dimensional electron gas, etc., due to the manipulations of defect chemistry and constituent elements via impurity doping. This paper reports on the intricacy of the structural and optoelectronic properties of the epitaxially stabilized 5 at. % Ta-doped SrTiO3 (001) thin films on LaAlO3 (001) substrates by systematically varying the growth temperature and oxygen partial pressure during the pulsed laser deposition process. The influences of Ta dopant and growth parameters on the epitaxial quality of these layers are understood by determining the dopant location and its concentration in the SrTiO3 lattice. The complex relationships of optical and electronic properties on growth parameters, dopant concentration, and single crystal quality of the films are demonstrated. The observed low resistivity (∼5 × 10−3 Ω cm) and high optical transparency (∼85%–90%) of optimized Ta-doped SrTiO3 films offer it as an exciting material for next generation transparent optoelectronics.

In this paper, a broadband metamaterial absorber with a fractional bandwidth of 126.88% was presented. The characteristic mode theory was used to guide the design of the absorber. According to the analysis of characteristic mode and characteristic current, the resistance value of resistive films can be determined. The different modal information obtained through parameter changes can also better guide the design of the absorber. To study its operation mechanism, the equivalent impedance and surface current distribution of the proposed absorber have been analyzed. The final simulation and measurement results show that the proposed absorber has a wide absorbing bandwidth which is from 3.21 to 14.35 GHz, and the absorptivity is greater than 90%, covering the S, C, X, and Ku bands. In addition, for TE and TM polarization, it can achieve an absorptivity of more than 85% at 45° oblique incident and has good angular stability. Hence, the absorber has great potential applications in the field of electromagnetic stealth technology and Radar Cross Section reduction.

Rapidly and accurately identifying tumor cells and blood cells is an important part of circulating tumor cell detection. Raman spectroscopy is a molecular vibrational spectroscopy technique that can provide fingerprint information about molecular vibrational and rotational energy levels. Deep learning is an advanced machine learning method that can be used to classify various data accurately. In this paper, the surface-enhanced Raman scattering spectra of blood cells and various tumor cells are measured with the silver film substrate. It is found that there are significant differences in nucleic acid-related characteristic peaks between most tumor cells and blood cells. These spectra are classified by the feature peak ratio method, principal component analysis combined with K-nearest neighbor, and residual network, which is a kind of deep learning algorithm. The results show that the ratio method and principal component analysis combined with the K-nearest neighbor method could only distinguish some tumor cells from blood cells. The residual network can quickly identify various tumor cells and blood cells with an accuracy of 100%, and there is no complex preprocessing for the surface-enhanced Raman scattering spectra. This study shows that the silver film surface-enhanced Raman scattering technology combined with deep learning algorithms can quickly and accurately identify blood cells and tumor cells, indicating an important reference value for the label-free detecting circulating tumor cells.

Discovery of new phosphors becomes an endless topic with great advances in light sources and emissive displays. Traditional trial-and-error methods are time-consuming and inefficient, and innovative approaches are, therefore, required for speeding up the materials discovery. In this paper, the single-particle-diagnosis approach, a novel materials screening method based on single crystal x-ray diffractometry and single-particle luminescence, will be introduced. The concept of this approach is first interpreted, followed by presenting the crystal structure and photoluminescence of newly discovered nitride phosphors. Finally, future perspectives of the single-particle-diagnosis approach are demonstrated.

This paper presents non-reciprocal information transfer between two mass-spring chains enabled using an electromechanical cell incorporating a metal–oxide–semiconductor field effect transistor (MOSFET). Mechanical information propagating through an input chain is converted into an electrical signal, and vice versa for an output chain, using a permanent magnet and a conducting coil in each chain. The conducting coils are coupled electrically via a MOSFET, leading to giant isolation and unidirectional signal transfer. We present theory, numerical simulations, and an experimental demonstration of the concept. The proposed system can be implemented as a “sonocoupler”, an acoustic analog of an optocoupler, which can isolate one mechanical system from another while transmitting information in a unidirectional manner.

Piezoelectric energy harvesting from ambient vibrations offers an environmentally friendly approach to powering distributed sensors for the Internet of Things. This paper gives a direct comparison of Pb(Zr,Ti)O3 (PZT)- and (K,Na)NbO3 (KNN)-based harvesters using a compliant mechanism harvester design for resonant frequencies of 20, 40, and 70 Hz. At 70 Hz, the measured power densities for PZT- and KNN-based devices are 1139 and 31 μW/mm3, respectively, for unimorph structures on nickel foils of 25 and 50 μm in thickness. The power density ratios scale proportionally to the material energy harvesting figures of merit. Energy harvesting with the compliant mechanism design is twice as efficient when compared to harvesting with a simple cantilever beam.

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

The design concept of microwave-assisted magnetic recording (MAMR) using the flux control (FC) effect has been proposed as a technology for hard disk drives (HDDs). In this type of MAMR, the magnetization of an in-gap device (FC device) is reversed against the gap field by spin-transfer torque, enhancing the amplitude and gradient of the recording field. In this paper, we study the magnetization dynamics of an FC device fabricated in the write gap of an HDD write head. The operation of the FC device is analyzed by measuring the temporal resistance change in the sub-nanosecond region. Reversal of the FC device becomes faster as the bias current is increased and can be completed by 0.5 ns after the transition of the write current. The experimental results are reproduced by micromagnetic simulations using a head model, confirming that the simulations correctly describe the magnetization dynamics of the actual device. The simulations show that the recording field gain by the FC device appears with little delay after the rise of the recording field and that the FC device operates effectively even at a fast write rate of approximately 3 Gbit/s. Furthermore, we demonstrate the effectiveness of boosting the bias current, which can realize both fast and reliable operation of the FC device. These results indicate that the FC device operates as designed and that MAMR using the FC effect is promising for extending the recording density of HDDs.

Vortex electromagnetic waves carrying orbital angular momentum (OAM) have been widely discussed for potential applications in wireless communications. Belonging to the Laguerre–Gaussian beams family, such type of waves present a hollow conical shape and divergence characteristics along with a directional radiation. In this paper, an innovative method to produce omnidirectional OAM beams based on spatial transformation is proposed at microwave frequencies. As a proof-of-concept demonstration, a lens with omnidirectional radiation in the horizontal plane is designed and simulated with an incident vortex beam carrying the OAM mode l = +2. The designed lens can be potentially implemented with an all-dielectric medium showing a gradient permittivity distribution. Furthermore, the proposed lens presents good performances over a wide operational bandwidth spanning from 8 to 17 GHz. By converting the directional beam to an omnidirectional one, the proposed method opens the door to the potential development of microwave vortex antenna systems.

Polymer piezoelectric nanogenerators (PENGs) have attracted extensive interest in mechanical energy conversion and wearable electronics for the advantages they have to offer owing some of their characteristics, e.g., the fact that they are light weight, possess a desirable flexibility, and benefit from a high adaptability and simple large-scale manufacturing processes. In this paper, a high-performance organic flexible PENG based on a poly(vinylidene fluoride-trifluorethylene) [P(VDF-TrFE)] film doped with a SnS nanosheet (NS) micropillar array has been prepared and characterized. The piezoelectric coefficient of the P(VDF-TrFE)/SnS NSs (0.3 wt. %) nanocomposite has been greatly enhanced compared with that of the pristine P(VDF-TrFE) film, from 13 to 21 pC N−1. It also demonstrates outstanding open-circuit voltage (Voc) and short-circuit current (Isc) outputs of 17.28 V cm−2 and 0.94 μA cm−2 under the pressure of 0.5 MPa, which represents a 6-fold and 4-fold improvement, respectively, compared with what a neat P(VDF-TrFE) film was able to deliver. The device was capable of producing a high output power density of 10.69 μW cm−2 under an applied pressure of 0.5 MPa. The dramatic enhancement obtained using nanocomposite micropillar array films results from a more developed β-phase content in the organic film, the higher piezoelectric properties of SnS NSs, and the better alignment of dipoles induced by the micropillar array structure. These remarkably enhanced PENG performances seem to hold much promise for the development of wearable electronics exploiting ambient mechanical energy, thanks to its ability to produce different signals depending on the nature of the source of stimuli.

We have developed a new ultra-low field frequency-swept (FS) electrically detected magnetic resonance (EDMR) spectrometer to perform sensitive EDMR measurements of 4H-silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors at sub-millitesla (mT) magnetic fields. The new spectrometer design enables the detection of so-called ultra-strong coupling effects such as multiple-photon transitions and Bloch–Siegert shifts. In this paper, we present a new spectrometer design and discuss ultra-low field FS-EDMR sensitivity to both multiphoton transitions and Bloch–Siegert shifts of the FS-EDMR response. FS-EDMR effectively eliminates the interference of the sub-mT EDMR response from a near-zero field magnetoresistance (NZFMR) phenomenon that pervades the sub-mT regime in a magnetic field-swept EDMR scheme. We discuss an automatic power leveling scheme, which enables frequency sweeping. We also present results illustrating the Bloch–Siegert shift of the FS-EDMR response. Finally, we study the two-photon transition line shape in the 4H-SiC transistor as a function of the static field, in which we observe a collapse of the two-photon linewidth with decreasing static field and compare our results to the theory of two-photon absorption in EDMR.

Ionizing radiation has the potential to cause operational disruptions and destroy microelectronic devices. This paper introduces and demonstrates a method of hardening microelectronic devices for sustained use in applications where exposure to ionizing radiation exists. By incorporating quantum structures below active regions of devices, gettering of charges created by ionizing radiation becomes possible. The gettering of electrons and holes forces recombination of carriers, thus eliminating photocurrent surges and trap filling which would otherwise disrupt device operation. Experimental results discussed here show a reduction in photocurrent of over two orders of magnitude when utilizing energy band engineering to create quantum structures for charge gettering. In this work, a nitride-based high electron mobility two-dimensional electron gas demonstrates the method. However, the theory utilized pertains not only to nitride-based devices, but transfers to other materials as well.

X-ray phase-contrast microtomography based on speckle tracking is an attractive method for non-destructive three-dimensional imaging owing to its simple setup and ability to yield absorption, refractive, and scattering images simultaneously. However, the edge-enhancement effect usually results in image artifacts or inaccurate phase retrieval, limiting the extensive application of this method in biomedical research and for low-Z materials. In this paper, a double-exposure method is introduced to solve this problem efficiently and accurately. Pure phase samples with various microstructures and densities and a biological sample with a distinct edge-enhancement effect were used to verify the effectiveness of the developed method. In an experiment performed using a polymer phantom with an evenly distributed density, 17 irregularly shaped particles with diameters ranging from 15 to 25 μm were successfully reconstructed with the effective elimination of the edge-enhancement effect. The results obtained for a sample composed of different polymer materials demonstrated that, in contrast with the traditional speckle-tracking method, the present method is able to discriminate materials with similar x-ray attenuations. Finally, experiments were performed using a dehydrated fish, which entail typical edge enhancement and a complex microstructure; notably, it was verified that the fine structure of the fish, including its fins and intestines, was reconstructed completely using the proposed method, whereas the standard speckle-tracking method was ineffective. In conclusion, the developed double-exposure method can serve as an efficient and accurate technique for the x-ray phase-contrast microtomography of samples comprising low-Z materials and complicated microstructures.

Grating-based x-ray phase-contrast imaging has been demonstrated to provide more information and higher-contrast images for low-Z soft tissues, compared with conventional absorption-based imaging. However, the existing Talbot–Lau phase-contrast devices are operated in either a two- or three-dimensional mode at low energy with a small field of view and long exposure time. This is because of coherence limitations, difficulties in fabricating high aspect ratio gratings, and the slow readout speed of the detector. For preclinical or even clinical applications, a variable x-ray energy, a large field of view, and fast phase-contrast computed tomography (CT) devices are desirable. The noninterferometric grating-based phase-contrast imaging method is a good candidate, as it relaxes requirements on gratings, including grating period and aspect ratio. Based on the noninterferometric imaging principle, we constructed a prototype phase-contrast CT system, at the National Synchrotron Radiation Laboratory of the University of Science and Technology of China, with medical imaging components. This prototype system enables a large field of view and fast phase-contrast CT imaging under medical imaging energies. In this paper, the prototype system and preliminary experimental results are reported, and possible optimization for forthcoming work is also discussed.

Designing thermal diodes is attracting a considerable amount of interest recently due to the wide range of applications and potentially high impact in the transportation and energy industries. Advances in nanoscale synthesis and characterization are opening new avenues for design using atomic-level tools to take advantage of materials properties in confined volumes. In this paper, we demonstrate using advanced modeling and simulation the rectification properties of tapered-channel thermal diodes relying on asymmetric heat flow brought about by thermal conductivity differences between the liquid and solid phases of suitably selected phase-change materials (PCM). Our prototypical design considers Ga as PCM and anodized alumina as the structural material. First, we use a thresholding scheme to solve a Stefan problem in the device channel to study the interface shape and the hysteresis of the phase transformation when the temperature gradient is switched. We then carry out finite-element simulations to study the effect of several geometric parameters on diode efficiency, such as channel length as aspect ratio. Our analysis establishes physical limits on rectification efficiencies and point to design improvements using several materials to assess the potential of these devices as viable thermal diodes. Finally, we demonstrate the viability of proof-of-concept device fabrication by using a non-conformal atomic layer deposition process in anodic alumina membranes infiltrated with Ga metal.

Femtosecond lasers (fs-lasers) offer a powerful and advantageous tool for fabricating a very large variety of materials. When processing transparent dielectrics, structural defects, such as cracks and broken edges, are always present, thus restricting the precision of fs-laser processing. In this paper, the formation and suppression mechanism of fs-laser induced structural defects are systematically studied. We demonstrate a novel method to improve the processing precision of lithium niobate (LiNbO 3) by elevating the substrate temperature. A crack-free ablation hole with a smooth edge was fabricated at the substrate temperature of 1000 °C. Our results show that the increase of absorptivity and the suppression of incubation effects are responsible for the high precision processing at a high substrate temperature, which not only inhibits the formation of defects, but also additionally increases the efficiency of fs-laser processing. This work provides a simple method to efficiently suppress the defect formation induced by fs-laser in LiNbO 3 samples, paving the way for a new technique for high precision fs-laser processing.

The availability of pulsed x rays on short timescales has opened up new avenues of research in the physics and chemistry of shocked materials. The continued installation of shock platforms such as gas guns and high power lasers placed at beamline x-ray facilities has advanced our knowledge of materials shocked to extreme conditions of pressure and temperature. In addition, theoretical advancements have made direct correspondence with high-pressure x-ray experiments more viable, increasing the predictive capability of these models. In this paper, we discuss both recent experimental results and the theory and modeling that has been developed to treat these complex situations. Finally, we discuss the impact that new platforms and increased beam time may have on the future direction of this field.

In this paper, we discuss a number of problems found in the literature related to experimental measurements of rf discharge electrical and plasma parameters with different electromagnetic probes. Incorrect evaluations of discharge power and the inaccurate measurement of basic plasma parameters with electrical (Langmuir), magnetic (B-dot), and microwave probes are among the troubling issues found in many recent publications on rf plasma. The purpose of this review is to show the origination of errors and ways to their mitigation based on the three-decade development of contemporary rf discharge diagnostics.

In this paper, we derived a new method to map various optoelectronic parameters of solar cells from voltage-dependent electroluminescence imaging. To get quantitative data, we show how the voltage dependence of electroluminescence mimics a local diode current–voltage behavior, and we propose a way to measure the absolute electroluminescence flux. We therefore introduce a calibration factor generally left unknown in the literature. Example is shown on the Al-BSF silicon solar cell for which we map several parameters: diffusion lengths, dark saturation current, local voltages, and lumped series resistances with good accuracy. Comparison with other electroluminescence imaging methods is also shown. Preliminary knowledge about the sample are the spectral reflection coefficient, average dopant concentration, and back surface recombination. This method can also be derived for other kinds of solar cells by using an appropriate carrier collection model depending on their structure.

Crystalline Si films incorporated with Al are important for applications in microelectronics and solar cells. In this paper, we report on the morphology of crystalline Si surfaces in Al/amorphous-Si bilayer thin films under ion beam irradiation at 100 °C. Micro-Raman and transmission electron microscopy studies show that best crystallization is achieved at a fluence of 1 × 1012 ions cm−2. The contact angle of Si surfaces (after chemically etched unreacted Al), referred to as absorber surfaces, decreases with increasing ion fluence. These surfaces are hydrophobic in nature and the hydrophobicity decreases with increasing ion fluence. Fractal and multifractal analysis of atomic force microscopy images, along with system energy/unit cell and Laplace pressure calculations, supports our observations. Moreover, the calculated multiple scattering cross sections of light, along with reflectivity measurements, indicate that absorber surfaces of best crystalline films have the lowest reflectivity. The present results suggest that such surfaces having low optical reflectance and a hydrophobic nature can be used as photon absorber layers for advanced solar cell devices.