1. Evolution of structural order in germanium ion-implanted amorphous silicon layers.
- Author
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Cheng, S. L., Lin, H. H., He, J. H., Chiang, T. F., Yu, C. H., Chen, L. J., Yang, C. K., Wu, D. Y., Chien, S. C., and Chen, W. C.
- Subjects
- *
ELECTRONIC structure , *GERMANIUM , *AMORPHOUS semiconductors , *TRANSMISSION electron microscopy - Abstract
High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. [ABSTRACT FROM AUTHOR]
- Published
- 2002
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